公开(公告)号：WO2019001873A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/063959

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：WO2018041507A1

公开(公告)日：2018-03-08

申请号：PCT/EP2017/069513

申请日：2017-08-02

Applicant: ASML NETHERLANDS B.V.

Inventor： TEL, Wim, Tjibbo ,  FINDERS, Jozef, Maria ,  MOURAILLE, Orion, Jonathan, Pierre ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

Abstract translation: 调整图案化叠层的方法，所述方法包括：定义测量表示与转移到衬底上的图案叠层中的图案相关的物理特性的参数如何受到 构图堆栈变量，所述构图堆栈变量表示所述构图堆栈的材料层的物理特性; 由硬件计算机系统改变构图堆栈变量并且通过硬件计算机系统评估关于变化的构图堆栈变量的函数，直到满足终止条件; 并在满足终止条件时输出构图堆栈变量的值。

公开(公告)号：WO2015067443A1

公开(公告)日：2015-05-14

申请号：PCT/EP2014/072035

申请日：2014-10-14

Applicant: ASML NETHERLANDS B.V.

Inventor： VAN SETTEN, Eelco ,  DAVYDOVA, Natalia, Viktorovna ,  PSARA, Eleni ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F1/24 ,  G03F1/44 ,  G03F7/20 ,  G03F1/38 ,  G03F1/22 ,  G03F1/70

CPC classification number: G03F1/24 ,  G03F1/22 ,  G03F1/38 ,  G03F1/44 ,  G03F1/68 ,  G03F1/70 ,  G03F7/2004 ,  G03F7/70433 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of characterizing a lithographic mask type uses a mask having thereon test pattern units of linear features at different orientations. The mask is exposed, rotated by 90º, exposed again, rotated by a further 90º, exposed, etc. The printed features are measured to determine characteristics of the mask. The invention can be used to model shadowing effects of EUV masks with thick absorbers illuminated at an angle.

Abstract translation: 表征平版印刷掩模类型的方法使用其上具有不同取向的线性特征的测试图案单元的掩模。 面罩暴露，旋转90度，再次暴露，旋转另外90度，暴露等。测量打印的特征以确定面具的特性。 本发明可用于模拟以一角度照射的厚吸收体的EUV掩模的遮蔽效果。

公开(公告)号：EP3291007A1

公开(公告)日：2018-03-07

申请号：EP16186305.5

申请日：2016-08-30

Applicant: ASML Netherlands B.V.

Inventor： TEL, Wim, Tjibbo ,  FINDERS, Jozef, Maria ,  MOURAILLE, Orion, Jonathan, Pierre ,  VAN OOSTEN, Anton, Bernhard

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70625

Abstract: A method of tuning a patterning stack (660), the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack (660) on a substrate (610), preferably by a lithographic process, is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack (660); varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.

Abstract translation: 一种调整图案化叠层（660）的方法，该方法包括：定义测量如何将表示属于图案的物理特性的参数转移到衬底（610）上的图案化叠层（660）中的功能，优选通过光刻 所述图案化堆栈变量表示所述图案化堆栈（660）的材料层的物理特性;以及图案化堆栈变量， 由硬件计算机系统改变构图堆栈变量并且通过硬件计算机系统评估关于变化的构图堆栈变量的函数，直到满足终止条件; 并在满足终止条件时输出构图堆栈变量的值。

公开(公告)号：EP3422102A1

公开(公告)日：2019-01-02

申请号：EP17177774.1

申请日：2017-06-26

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on subresolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (wl) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.