公开(公告)号：WO2019129468A1

公开(公告)日：2019-07-04

申请号：PCT/EP2018/083770

申请日：2018-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： MEDVEDYEVA, Mariya, Vyacheslavivna ,  DE LA FUENTE VALENTIN, Maria, Isabel ,  KHEDEKAR, Satej, Subhash ,  VERSTRAETEN, Bert ,  FAGGINGER AUER, Bastiaan, Onne

IPC: G03F7/20

CPC classification number: G01M11/02 ,  G01B11/002 ,  G01B2210/56 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

Abstract: Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology data is applied to a target on a substrate. The metrology process comprises illuminating the target with measurement radiation and detecting radiation redirected by the target. The measurement data comprises at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further comprises analysing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.

公开(公告)号：WO2019149496A1

公开(公告)日：2019-08-08

申请号：PCT/EP2019/050561

申请日：2019-01-10

Applicant: ASML NETHERLANDS B.V.

Inventor： MEDVEDYEVA, Mariya, Vyacheslavivna ,  TSIATMAS, Anagnostis ,  CRAMER, Hugo, Augustinus, Joseph ,  VAN WEERT, Martinus, Hubertus, Maria ,  FAGGINGER AUER, Bastiaan, Onne ,  SHANG, Xiaoxin ,  VAN BOXMEER, Johan, Maria ,  VERSTRAETEN, Bert

IPC: G03F7/20 ,  G02B7/38

Abstract: Methods of determining an optimal focus height are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a target are obtained. Each application of the metrology process comprises illuminating the target with a radiation spot and detecting radiation redirected by the target. The applications of the metrology process include applications at different nominal focus heights. The measurement data comprises, for each application of the metrology process, at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method comprises determining an optimal focus height for the metrology process using the obtained measurement data.

公开(公告)号：WO2018046265A1

公开(公告)日：2018-03-15

申请号：PCT/EP2017/070763

申请日：2017-08-16

Applicant: ASML NETHERLANDS B.V.

Inventor： VERSTRAETEN, Bert ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining, by a computer system, a value pertaining to the patterning process based on the results of the first and second measurements.

Abstract translation: 一种评估构图过程的方法，该方法包括：获得第一度量衡目标的第一测量结果; 获得第二度量衡目标的第二测量结果，第二度量衡目标具有与第一度量衡目标的结构差异，所述第二度量衡量目标产生第一和第二测量目标之间的图案化过程的过程参数的灵敏度差异和/或偏移量 度量衡目标; 以及由计算机系统基于第一和第二测量的结果确定与图案化过程有关的值。

公开(公告)号：WO2019001873A1

公开(公告)日：2019-01-03

申请号：PCT/EP2018/063959

申请日：2018-05-28

Applicant: ASML NETHERLANDS B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on sub-resolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (w1) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：WO2019042726A1

公开(公告)日：2019-03-07

申请号：PCT/EP2018/071418

申请日：2018-08-07

Applicant: ASML NETHERLANDS B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：WO2018086968A1

公开(公告)日：2018-05-17

申请号：PCT/EP2017/077914

申请日：2017-10-31

Applicant: ASML NETHERLANDS B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收的接收的至少一个衍射级，也不接收来自仅来自第二周期性成分的测量辐射的衍射。

公开(公告)号：EP3451060A1

公开(公告)日：2019-03-06

申请号：EP17188175.8

申请日：2017-08-28

Applicant: ASML Netherlands B.V.

Inventor： VERMA, Alok ,  CRAMER, Hugo Augustinus Joseph ,  THEEUWES, Thomas ,  TSIATMAS, Anagnostis ,  VERSTRAETEN, Bert

IPC: G03F7/20

Abstract: A substrate comprising a plurality of features for use in measuring a parameter of a device manufacturing process and associated methods and apparatus. The measurement is by illumination of the features with measurement radiation from an optical apparatus and detecting a signal arising from interaction between the measurement radiation and the features, wherein the plurality of features comprise first features distributed in a periodic fashion at a first pitch, and second features distributed in a periodic fashion at a second pitch, and wherein the first pitch and second pitch are such that a combined pitch of the first and second features is constant irrespective of the presence of pitch walk in the plurality of features.

公开(公告)号：EP3293575A1

公开(公告)日：2018-03-14

申请号：EP16188370.7

申请日：2016-09-12

Applicant: ASML Netherlands B.V.

Inventor： VERSTRAETEN, Bert ,  CRAMER, Hugo, Augustinus, Joseph ,  THEEUWES, Thomas

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining, by a computer system, a value pertaining to the patterning process based on the results of the first and second measurements.

Abstract translation: 一种评估构图过程的方法，该方法包括：获得第一度量衡目标的第一测量结果; 获得第二度量衡目标的第二测量结果，第二度量衡目标具有与第一度量衡目标的结构差异，所述第二度量衡量目标产生第一和第二测量目标之间的图案化过程的过程参数的灵敏度差异和/或偏移量 度量衡目标; 以及由计算机系统基于第一和第二测量的结果确定与图案化过程有关的值。

公开(公告)号：EP3422102A1

公开(公告)日：2019-01-02

申请号：EP17177774.1

申请日：2017-06-26

Applicant: ASML Netherlands B.V.

Inventor： STAALS, Frank ,  VAN OOSTEN, Anton, Bernhard ,  YUDHISTIRA, Yasri ,  LUIJTEN, Carlo, Cornelis, Maria ,  VERSTRAETEN, Bert ,  GEMMINK, Jan-Willem

IPC: G03F7/20

Abstract: Focus metrology patterns and methods are disclosed which do not rely on subresolution features. Focus can be measured by measuring asymmetry of the printed pattern (T), or complementary pairs of printed patterns (TN/TM). Asymmetry can be measured by scatterometry. Patterns may be printed using EUV radiation or DUV radiation. A first type of focus metrology pattern comprises first features (422) interleaved with second features (424). A minimum dimension (wl) of each first feature is close to a printing resolution. A maximum dimension (w2) of each second feature in the direction of periodicity is at least twice the minimum dimension of the first features. Each first feature is positioned between two adjacent second features such that a spacing (w1') and its nearest second feature is between one half and twice the minimum dimension of the first features. A second type of focus metrology pattern comprises features (1122, 1124) arranged in pairs.

公开(公告)号：EP3321738A1

公开(公告)日：2018-05-16

申请号：EP16198272.3

申请日：2016-11-10

Applicant: ASML Netherlands B.V.

Inventor： TSIATMAS, Anagnostis ,  VERMA, Alok ,  VERSTRAETEN, Bert

IPC: G03F7/20

CPC classification number: G03F7/70466 ,  G03F7/70633

Abstract: A method of measuring a parameter of a device manufacturing process is disclosed. The method comprises measuring a target on a substrate by illuminating the target with measurement radiation and using an optical apparatus to detect the measurement radiation scattered by the target. The target comprises a target structure having a first periodic component and a second periodic component. The optical apparatus receives radiation resulting from diffraction of the measurement radiation from the target structure. The received radiation comprises at least one diffraction order that would not be received from diffraction of the measurement radiation from the first periodic component alone nor from diffraction of the measurement radiation from the second periodic component alone.

Abstract translation: 公开了一种测量器件制造工艺的参数的方法。 该方法包括通过用测量辐射照射目标并使用光学设备来检测由目标散射的测量辐射来测量衬底上的目标。 目标包括具有第一周期性分量和第二周期性分量的目标结构。 该光学设备接收来自目标结构的测量辐射的衍射所产生的辐射。 所接收的辐射包括将不从仅来自第一周期性成分的测量辐射的衍射接收到的至少一个衍射级，或者来自仅来自第二周期性成分的测量辐射的衍射。