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    Apparatus and Method for Shielding and Biasing in MEMS Devices Encapsulated by Active Circuitry
    11.
    发明申请
    Apparatus and Method for Shielding and Biasing in MEMS Devices Encapsulated by Active Circuitry 审中-公开
    用于主动电路封装的MEMS器件中的屏蔽和偏置的装置和方法

    公开(公告)号：US20140374850A1

    公开(公告)日：2014-12-25

    申请号：US13926384

    申请日：2013-06-25

    Applicant: Analog Devices, Inc.

    Inventor： Li Chen ,  Thomas Kieran Nunan ,  Kuang L. Yang ,  Jeffrey Gregory

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0029 ,  B81C1/00238 ,  B81C1/00349 ,  H01L21/02126 ,  H01L25/0657 ,  H01L2224/81801 ,  H01L2924/10253 ,  H01L2924/1461

    Abstract: One or more conductive shielding plates are formed in a standard ASIC wafer top metal layer, e.g., for blocking cross-talk from MEMS device structure(s) on the MEMS wafer to circuitry on the ASIC wafer when the MEMS device is capped directly by the ASIC wafer in a wafer-level chip scale package. Generally speaking, a shielding plate should be at least slightly larger than the MEMS device structure it is shielding (e.g., a movable MEMS structure such as an accelerometer proof mass or a gyroscope resonator), and the shielding plate cannot be in contact with the MEMS device structure during or after wafer bonding. Thus, a recess is formed to ensure that there is sufficient cavity space away from the top surface of the MEMS device structure. The shielding plate is electrically conductive and can be biased, e.g., to the same voltage as the opposing MEMS device structure in order to maintain zero electrostatic attraction force between the MEMS device structure and the shielding plate.

    Abstract translation: 在标准ASIC晶片顶部金属层中形成一个或多个导电屏蔽板，例如，当MEMS器件直接由该芯片封装时，用于阻止从MEMS晶片上的MEMS器件结构到ASIC晶片上的电路的串扰 ASIC晶圆采用晶圆级芯片级封装。 一般来说，屏蔽板应至少稍微大于被屏蔽的MEMS器件结构（例如，可移动MEMS结构，例如加速度计质量块或陀螺仪谐振器），并且屏蔽板不能与MEMS接触 晶片接合期间或之后的器件结构。 因此，形成凹部以确保离开MEMS器件结构的顶表面有足够的空腔。 屏蔽板是导电的，并且可以被偏置，例如与相对的MEMS器件结构相同的电压，以便在MEMS器件结构和屏蔽板之间维持零静电吸引力。

    Self-calibrated heavy metal detector
    12.
    发明授权
    Self-calibrated heavy metal detector 有权

    公开(公告)号：US10746696B2

    公开(公告)日：2020-08-18

    申请号：US15383415

    申请日：2016-12-19

    Applicant: Analog Devices, Inc.

    Inventor： Chen Yang ,  Yumeng Liu ,  Li Chen ,  Kuang L. Yang

    IPC: G01N27/447

    Abstract: A microfluidic ion detector for detecting heavy metal ions in liquid and particulate matter from gas samples is described. The microfluidic ion detector includes a sample extraction structure for extracting sample ions from a sample liquid or extracting sample ions from the particulate matter of a gas sample, a separation structure for separating sample ions of different types once extracted, and a detection structure for detecting the sample ions. The microfluidic ion detector also includes a reference reservoir providing a reference ion against which the sample may be calibrated based on the operation of the separation structure. A portable, self-calibrating ion detector may be realized by including the described components on a single substrate.

    Through silicon via (TSV) formation in integrated circuits
    14.
    发明授权
    Through silicon via (TSV) formation in integrated circuits 有权

    公开(公告)号：US11097942B2

    公开(公告)日：2021-08-24

    申请号：US15334619

    申请日：2016-10-26

    Applicant: Analog Devices, Inc.

    Inventor： Thomas Kieran Nunan ,  Li Chen

    IPC: B81B7/00 ,  B81C1/00 ,  B81C3/00 ,  H01L21/768 ,  H01L23/48

    Abstract: Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.

    Sealed MEMS Devices with Multiple Chamber Pressures
    18.
    发明申请
    Sealed MEMS Devices with Multiple Chamber Pressures 有权
    具有多室压力的密封MEMS器件

    公开(公告)号：US20150097253A1

    公开(公告)日：2015-04-09

    申请号：US14045855

    申请日：2013-10-04

    Applicant: Analog Devices, Inc.

    Inventor： Christine H. Tsau ,  Li Chen ,  Kuang L. Yang

    IPC: B81B7/00 ,  B81C1/00 ,  H01L29/84

    CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  G01P1/023 ,  G01P15/0802 ,  H01L29/84

    Abstract: A MEMS apparatus has a substrate, a cap forming first and second chambers with the base, and movable microstructure within the first and second chambers. To control pressures, the MEMS apparatus also has a first outgas structure within the first chamber. The first outgas structure produces a first pressure within the first chamber, which is isolated from the second chamber, which, like the first chamber, has a second pressure. The first pressure is different from that in the second pressure (e.g., a higher pressure or lower pressure).

    Abstract translation: MEMS装置具有基板，形成具有基座的第一和第二室的盖以及第一和第二室内的可移动微结构。 为了控制压力，MEMS装置还在第一室内具有第一排气结构。 第一排气结构在第一室内产生第一压力，该第一压力与第二室隔离，其与第一室相似，具有第二压力。 第一压力与第二压力（例如，较高压力或更低压力）不同。

    Method of manufacturing MEMS devices with reliable hermetic seal
    19.
    发明授权
    Method of manufacturing MEMS devices with reliable hermetic seal 有权
    制造具有可靠气密密封的MEMS器件的方法

    公开(公告)号：US08921128B2

    公开(公告)日：2014-12-30

    申请号：US13904681

    申请日：2013-05-29

    Applicant: Analog Devices, Inc.

    Inventor： Li Chen ,  Kuang L. Yang

    IPC: B81C1/00 ,  H01L21/66

    CPC classification number: B81C99/0045

    Abstract: Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing.

    Abstract translation: 在不同压力下或在不同温度下的晶圆探测器上对制造的封装的MEMS器件晶片进行真空探测器的气密性测试。 进行谐振频率测试。 基于从谐振频率测试获得的品质因数（“Q”）测量，泄漏的MEMS器件与剩余的MEMS器件不同。

    METHOD OF MANUFACTURING MEMS DEVICES WITH RELIABLE HERMETIC SEAL
    20.
    发明申请
    METHOD OF MANUFACTURING MEMS DEVICES WITH RELIABLE HERMETIC SEAL 有权
    用可靠的密封封装制造MEMS器件的方法

    公开(公告)号：US20140356989A1

    公开(公告)日：2014-12-04

    申请号：US13904681

    申请日：2013-05-29

    Applicant: Analog Devices, Inc.

    Inventor： Li Chen ,  Kuang L. Yang

    IPC: B81C1/00 ,  H01L21/66

    CPC classification number: B81C99/0045

    Abstract: Manufactured capped MEMS device wafers are tested for hermeticity on a vacuum prober at differing pressures or on a wafer prober at differing temperatures. Resonant frequency testing is conducted. Leaking MEMS devices are distinguished from the remaining MEMS devices on the basis of quality factor (“Q”) measurements obtained from the resonant frequency testing.

    Abstract translation: 在不同压力下或在不同温度下的晶圆探测器上对制造的封装的MEMS器件晶片进行真空探测器的气密性测试。 进行谐振频率测试。 基于从谐振频率测试获得的品质因数（“Q”）测量，泄漏的MEMS器件与剩余的MEMS器件不同。

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