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公开(公告)号：JPH06103619A
公开(公告)日：1994-04-15
申请号：JP15727691
申请日：1991-06-28
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , TOOMASU SHIMERU , HAARARUTO KERAA
IPC: G01R33/10 , B82B3/00 , G01Q60/00 , G01Q80/00 , G01R33/12 , G11B9/00 , G11B9/14 , G11C13/00 , G11C13/02 , H01J37/28
Abstract: PURPOSE: To stabilize the accumulation of information with lapse of time by enabling the selective removal of atoms from a solid surface without changing the lattice structure of the remaining atoms at the time of labeling the discrete atoms or atom groups including compds. or completely intimately mixed allays on the solid surface. CONSTITUTION: A high information density is obtd. by storing the information on the atom regions at the time of storing or writing information units. Namely, erasure is made possible again by recombining vacancy to the atoms or atom groups, by which the restoration of the original state is made possible. The recombination is effected on the surface of the solid and more particularly the semiconductor layer of doped chalcogenide, etc., to this size, for example, by using the needle-like electrode of a sensitive surface scanning probe of a scanning tunnel microscope or scanning atomic microscope and applying a short time of an electric field or magnetic field to the surface. The max. limit electric field surface of the semiconductor layer surface of this kind of the probe is 10 to 0.1nm and, therefore, a linear influence is exerted on the electron structure and the desorption of the specific one kind of the atoms is made possible.
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公开(公告)号：JPH05210876A
公开(公告)日：1993-08-20
申请号：JP20678292
申请日：1992-08-03
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , TOOMASU SHIMUMERU
Abstract: PURPOSE: To bring the pointed end of a local searching probe into the proximity to a solid-state surface having a laminated structure and to reproducibly form a build-up having a size of nanometer range stably with the lapse of time without destroying the atomic arrangement on the surface by the effect thereof. CONSTITUTION: The pointed end of the local searching probe of a scanning tunneling type electron microscope is brought into the proximity to the deformation position of a laminar semiconductor or near the same in the air under a stationary atmosphere condition, i.e., at room temp. to induce suction force electrostatically, magnetically or by adhesive force or capillarity between the semiconductor surface and the searching probe. As a result, the local build-up long in a transverse direction and stable with lapse of time within the nanometer range is formed without destroying the atom arrangement on the surface at the point where the change is brought about or near the same.
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公开(公告)号：JPH05177956A
公开(公告)日：1993-07-20
申请号：JP3631292
申请日：1992-02-24
Applicant: BASF AG
Inventor： FUORUKAA BATSUHA , KAARUUHAINTSU ETSUBATSUHA , HAARARUTO FUKUSU , KAARU ZUIIMENSUMAIYAA , GEERUHARUTO BUAAGENBURASUTO
IPC: B41M5/36 , B41M5/28 , G02F1/1333 , G02F1/141 , G03G5/00 , G03G5/024 , G03G13/056 , G03G15/056
Abstract: PURPOSE: To produce a surface charge pattern without forming a free charge carrier by carrying out a reversible imagewise orientation to a part or the whole of permanent dipole in the recording layer with the aid of an electric field applied imagewise. CONSTITUTION: A recording layer, which contains an organic material which solidifies in glassy form, is no photoconductive or slightly photoconductive and has permanent dipole, is formed on a support material. A surface charge pattern is produced without forming a free charge carrier by carrying out a reversible imagewise orientation to a part or the whole of permanent dipole in the recording layer with the aid of an electric field applied imagewise. The recording layer solidifies in glassy form, is no photoconductive or slightly photoconductive, and preferably contains one or several organic materials which act as nematic liquid crystal, smectic liquid crystal, chiral-smectic liquid crystal, or ferroelectricity smectic liquid crystal.
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14.发明专利
公开(公告)号：JPH04290542A
公开(公告)日：1992-10-15
申请号：JP25078791
申请日：1991-09-30
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , URURIKE RIHITO , BUORUFUGANGU SHIYUREPU
IPC: B01J19/00 , B05D1/20 , C08F22/36 , C08F222/40 , C08G73/10 , C08G73/12 , C08J5/18 , H01L21/312
Abstract: PURPOSE: To provide an ultrathin thermostable bismaleimide film wherein especially the insulating properties and the pattern-forming ability through high- energy radiation are improved. CONSTITUTION: An ultrathin, thermostable, uniform bismaleimide film with an adjustable thickness of 1 μm or thinner is obtained by converting an ionic precursor, obtained by allowing a reaction product of a diamine and an anhydrous maleic acid to react with a long-chain amine, to an imide.
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公开(公告)号：JPH02307572A
公开(公告)日：1990-12-20
申请号：JP9659290
申请日：1990-04-13
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , DEIRUKU FUNHOFU , URURIKE RIHITO , BUORUFUGANGU SHIYUREPU
Abstract: PURPOSE: To obtain a thin film having stability to oxygen plasma etching by forming a uniform thin film of 40 Å to 1 μm thickness on a substrate by the Langmuir-Blodgett technique or the self-assembly technique using a specified silicon-contg. compd. CONSTITUTION: A uniform thin film of 40 Å to 1 μm thickness is formed on a substrate by the Langmuir-Blodgett technique or the self-assembly technique using a silicon-contg. compd. of formula I [where R', R" and R"' are each 1-4C alkyl or 6-10C aryl, R and R are each halogenated alkyl, oxyalkyl or the like, R and R are each divalent optionally halogenated alkylene, oxyalkylene or the like, R and R are each OH, COOH, CN or the like and (x) and (y) are each 0-1,000] to obtain the objective thin film having stability to oxygen plasma etching. An electronic device is produced by forming an image with radiation using the thin film and microlithography using the thin film is provided.
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Patent Agency Ranking
公开(公告)号：JPH05242849A
公开(公告)日：1993-09-21
申请号：JP14230792
申请日：1992-06-03
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , TOOMASU SHIMERU
IPC: G01B21/30 , B82B3/00 , G01Q60/04 , G01Q70/12 , G01Q80/00 , G11B9/00 , G11B9/14 , H01J37/28 , H01J37/30
Abstract: PURPOSE: To change selectively and eliminate reversibly a pattern with a nm range of a solid surface by positioning a pattern with an space of Å range on a solid surface, or moving a tip of a surface sensitive scanning probe contacted to the surface on a surface pattern at practically same height level. CONSTITUTION: A tip of an extra fine surface sensitive scanning probe, that is a scanning tunneling microscope(STM) or the like, is positioned right above a pattern with a nm range which is desired to be changed. Next, by moving it with a certain space kept from x/y surface of a specimen surface of a pattern which is not changed yet, a change of the pattern is mechanically formed by a very fine probe, or formed by applying a voltage pulse between the specimen and the probe. Thereby, it becomes possible to form a pattern to maintain an atomic arrangement of the solid surface observed by STM on the pattern itself and around it. As a result, an image is formed with atomic resolution, and writing, reading, treatment of changes and erasing can be done freely at any place.
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公开(公告)号：JPH05242685A
公开(公告)日：1993-09-21
申请号：JP41515790
申请日：1990-12-27
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU
Abstract: PURPOSE: To enable stable recording of information units in a nanometer order with time by causing plastic deformation of the surface of a semiconductor laminated material, without changing the order of atoms by using a scanning probe having surface sensitivity. CONSTITUTION: Semiconductor layers including a conventional semiconductor layer based on WSe2 or other selenides, tellurides and sulfides are used. The surface of the semiconductor layer is plastically deformed by using a scanning probe having surface sensitivity of the surface by a closed field technique. Pits which are usually circular or elliptic are produced without disturbing the atomic order of the semiconductor material. The surface with plastic deformation of the semiconductor laminated body is very rapidly changed into the structure, without any memory by heat treatment or, if necessary, by treatment with IR laser beam. As for the closed field technique to be used to write information, a well-known method for a scanning tunneling microscope or scanning atomic force microscope is used.
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公开(公告)号：JPH04233436A
公开(公告)日：1992-08-21
申请号：JP24564291
申请日：1991-09-25
Applicant: BASF AG
Inventor： HAARARUTO FUKUSU , BUORUFUGANGU SHIYUREPU , MIHIYAERU RAPU , ZUIIKUFURIITO FUNKURINGAA , MANFUREETO FUON SHIKUFUSU
Abstract: PURPOSE: To provide a surface wave gas sensor having high sensitivity and a short response time to a low gas concn. without generating a mode discontinuous problem. CONSTITUTION: A surface wave delay line 2 constituting a part of an oscillation circuit is coated with an org. non-conductive solid film adsorbing gas to be measured and, in this case, the delay line 2 has resonance frequency within the range of 0.5-2GHz and the length of converters 3, 4 is larger than the length of the delay line 2 and the converters 3, 4 are constituted so that the response curve in the response spectrum of the delay line does not permit the discontinuity of a mode.
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公开(公告)号：JPH03246300A
公开(公告)日：1991-11-01
申请号：JP32339390
申请日：1990-11-28
Applicant: BASF AG
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公开(公告)号：JPH03201230A
公开(公告)日：1991-09-03
申请号：JP4971890
申请日：1990-03-02
Applicant: BASF AG
Inventor： DEIRUKU FUNHOFU , HAARARUTO FUKUSU , URURIKE RIHITO , BUORUFUGANGU SHIYUREPU , BUERUNAA HITSUKERU , BUORUFUGANGU KUNORU , GEERUHARUTO BUEEGUNAA , GIIZERA DOUDA
Abstract: PURPOSE: To attain the reading out of high sensitivity with slight electric power by reading out the information written into a specific polymer layer coating a metallic layer or semiconductor layer by surface plasmon. CONSTITUTION: The information written by image exposure by a laser beam 1 into the polymer layer 2 of a thickness of the layer of 0.1μm below with which the surface of a metallic layer 3 is coated is read out by the surface plasmon 6. The polymer layer 2 contains at least one kind of dyes at the prescribed concn. per unit surface area. The dyes are preferably lipophilic dyes which are soluble in an org. solvent and are dispersed uniformly into a polymer matrix. As a result, the memory of the information in the thin medium and the reading out at the high signal-to-noise ratio to the extent of allowing quantitative understanding are made possible.
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