FORMATION OF UNIFORM THIN FILM
    7.
    发明专利

    公开(公告)号:JPH02307572A

    公开(公告)日:1990-12-20

    申请号:JP9659290

    申请日:1990-04-13

    Applicant: BASF AG

    Abstract: PURPOSE: To obtain a thin film having stability to oxygen plasma etching by forming a uniform thin film of 40 Å to 1 μm thickness on a substrate by the Langmuir-Blodgett technique or the self-assembly technique using a specified silicon-contg. compd. CONSTITUTION: A uniform thin film of 40 Å to 1 μm thickness is formed on a substrate by the Langmuir-Blodgett technique or the self-assembly technique using a silicon-contg. compd. of formula I [where R', R" and R"' are each 1-4C alkyl or 6-10C aryl, R and R are each halogenated alkyl, oxyalkyl or the like, R and R are each divalent optionally halogenated alkylene, oxyalkylene or the like, R and R are each OH, COOH, CN or the like and (x) and (y) are each 0-1,000] to obtain the objective thin film having stability to oxygen plasma etching. An electronic device is produced by forming an image with radiation using the thin film and microlithography using the thin film is provided.

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