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    11.
    发明专利
    未知

    公开(公告)号：DE4122408A1

    公开(公告)日：1993-01-07

    申请号：DE4122408

    申请日：1991-07-06

    Applicant: BASF AG

    Inventor： HOFFMANN BERND F W PROF DR ,  ERBACH RAINER ,  VOGEL ALBRECHT ,  WEGNER GERHARD PROF DR ,  FUCHS HARALD DR ,  SCHREPP WOLFGANG DR ,  SCHAUB MATTHIAS

    IPC: G01N27/414 ,  G01N27/22 ,  G01N27/333

    Abstract: The invention relates to a miniaturisable, capacitively measuring chemical sensor system on a semiconductor basis, comprising a sensor and a reference element which are to be contacted with the electrolyte to be measured, the reference element being connected in series with the sensor, the reference element comprising a highly doped semiconductor substrate or metal/semiconductor substrate which is coated with a membrane, and the sensor comprising an insulator/semiconductor substrate which is coated with a sensitive membrane, and the sensitive membrane of the sensor being more sensitive than that of the reference element. Sensor and reference element of said sensor system can either be applied to the same chip or consist of individual components which can readily be interchanged.

    Method of producing resist patterns and dry-film resist suitable for said method
    16.
    发明专利
    Method of producing resist patterns and dry-film resist suitable for said method 未知

    公开(公告)号：DE3346716A1

    公开(公告)日：1985-07-04

    申请号：DE3346716

    申请日：1983-12-23

    Applicant: BASF AG

    Inventor： WEGNER GERHARD PROF DR ,  LEYRER REINHOLD J DR ,  MUELLER MICHAEL A

    IPC: G03F7/039 ,  G03F7/26 ,  C08F8/50 ,  C08F138/02 ,  G03C1/72

    Abstract: In the production of resist patterns by applying a radiation-sensitive, positive-working resist layer to a substrate, imagewise irradiation of the resist layer with actinic radiation and removal of the irradiated portions of the layer to develop the resist pattern, use is made of a radiation-sensitive resist layer based, in particular, on soluble poly(diacetylenes) containing sensitisers which can be activiated by the actinic radiation and which, after their activation, induce or accelerate the molecular decomposition of the poly(diacetylenes). The invention also relates to dry-film resists with a temporary, dimensionally stable layer base, a radiation-sensitive resist layer which is applied thereto and is based, preferably, on soluble poly(diacetylenes), and, optionally, to a top layer on the radiation-sensitive resist layer; the radiation-sensitive resist layer contains sensitisers which can be activated by actinic radiation and which, after their activation, induce or accelerate the molecular decomposition of the poly(diacetylenes).

    19.
    发明专利
    未知

    公开(公告)号：DE3864618D1

    公开(公告)日：1991-10-10

    申请号：DE3864618

    申请日：1988-07-19

    Applicant: BASF AG

    Inventor： WEGNER GERHARD PROF DR ,  DUDA GISELA ,  BUBECK CHRISTOPH DR ,  SCHOUTEN AREND JAN DR

    IPC: C08K5/00 ,  B05D1/20 ,  C08J5/18 ,  C08L101/00 ,  C09K3/00 ,  G02B5/22

    Abstract: In the prodn. of thin films with a definite concn. of dyestuff/unit area, the novel features are than an oleophilic dyestuff (I), which is soluble in organic, water-immiscible solvent, and an organic polymer (II) are dissolved in an organic, water-immiscible solvent (III); spread at a water/air interface; and transferred to a solid substrate (IV) by the Langmuir-Blodgett technique after evaporating (III). (I) is pref. insol. in water and contains no structures which become aligned at the water/air interface. (II) can be polyglutamates with long-chain substits. in the gamma-position; or (co)polymers or polycondensates with lateral long-chain n-alkyl gps., opt. partly replaced by shorter n-alkyl gps., branched alkyl gps. of the same length or shorter and/or gps. with C-C multiple bond(s) of the same length or shorter, attached to the main polymer chain through polar gps., pref. -O-, -CO-, -CO-O- or -CO-NH-.

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