公开(公告)号：US20200339523A1

公开(公告)日：2020-10-29

申请号：US16765371

申请日：2018-12-05

Applicant: BASF SE

Inventor： Joannes Theodorus Valentinus HOOGBOOM ,  Jhih Jheng KE ,  Che Wei WANG ,  Andreas KLIPP ,  Yi Ping CHENG

IPC: C07D265/30 ,  C23F1/44 ,  C23F1/20 ,  H01L21/311

Abstract: A composition for selectively etching a layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt is described, and a corresponding use of said composition. Further is described a process for the manufacture of a semiconductor device, comprising the step of selectively etching at least one layer comprising an aluminium compound in the presence of a layer of a low-k material and/or a layer comprising copper and/or cobalt by contacting the at least one layer comprising an aluminium compound with the described composition.

公开(公告)号：US20160200943A1

公开(公告)日：2016-07-14

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert REICHARDT ,  Martin KALLER ,  Michael LAUTER ,  Yuzhuo LI ,  Andreas KLIPP

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09K3/1463 ,  C09G1/02 ,  H01L21/3212

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

Abstract translation: 提供化学机械抛光（CMP）组合物，其包含（A）一种或多种选自作为防腐剂的苯并三唑衍生物的化合物和（B）无机颗粒，有机颗粒或其复合物或混合物。 本发明还涉及使用选自苯并三唑衍生物的某些化合物作为缓蚀剂，特别是用于提高化学机械抛光（CMP）组合物从用于制造钽酸铅的基材中除去钽或氮化钽的选择性 在所述衬底上存在铜的半导体器件。

公开(公告)号：US20250115809A1

公开(公告)日：2025-04-10

申请号：US18730007

申请日：2023-02-13

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Sven HILDEBRANDT ,  Andreas KLIPP ,  Chih Hui LO ,  Mei Chin SHEN

IPC: C09K13/08 ,  H01L21/306

Abstract: Disclosed herein is a composition for selectively etching a first silicon germanium layer having a first germanium content in the presence of a silicon layer or a second silicon germanium layer having a second germanium content, where the first germanium content is higher than the second germanium content, the composition including: (a) from 0.1 to 10% by weight of an oxidizing agent; (b) from 1 to 20% by weight of an etchant including a source of fluoride ions; (c) from 0.001 to 3% by weight of a selectivity enhancer of formula Si (d) from 0.001 to 3% by weight of an additional selectivity enhancer of formula S41 or derivatives thereof obtained by homocondensation of the compounds of formula S41 or by co-condensation of the compounds of formula S41 with silanes of formula S42 in a weight ratio of 0.1 or more and (e) water.

公开(公告)号：US20240282584A1

公开(公告)日：2024-08-22

申请号：US18566245

申请日：2022-06-28

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Sven HILDEBRANDT ,  Andreas KLIPP

IPC: H01L21/3213

CPC classification number: H01L21/32134

Abstract: Described herein is a method of using a composition for selectively etching a silicon layer in the presence of a layer including a silicon germanium alloy, the composition including: (a) 4 to 15% by weight of an amine of formula (E1), and (b) water, where XE1, XE2, and XE3 are independently selected from a chemical bond and C1-C6 alkanediyl; YE is selected from N, CRE1, and P; RE1 is selected from H and C1-C6 alkyl.

公开(公告)号：US20230326759A1

公开(公告)日：2023-10-12

申请号：US18042315

申请日：2021-08-18

Applicant: BASF SE

Inventor： Francisco Javier LOPEZ VILLANUEVA ,  Andreas KLIPP ,  Sabine FRISCHHUT ,  Chih Hui LO ,  Mei Chin SHEN

IPC: H01L21/306

CPC classification number: H01L21/30608

Abstract: Disclosed herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a layer including silicon, the composition including:



(a) 5 to 15% by weight of an oxidizing agent;
(b) 5 to 20% by weight of an etchant comprising a source of fluoride ions;
(c) 0.001 to 3% by weight of a first selectivity enhancer of formula S1
and
(d) water.

公开(公告)号：US20230274930A1

公开(公告)日：2023-08-31

申请号：US18004348

申请日：2021-06-29

Applicant: BASF SE

Inventor： Chi Yueh KAO ,  Mei Chin SHEN ,  Andreas KLIPP ,  Haci Osman GUEVENC ,  Daniel LOEFFLER

IPC: H01L21/02 ,  G03F7/40 ,  C11D11/00 ,  C11D7/50 ,  C11D3/37

CPC classification number: H01L21/0206 ,  C11D3/3734 ,  C11D3/3738 ,  C11D7/5022 ,  C11D7/5027 ,  C11D11/0047 ,  G03F7/40

Abstract: Described herein is a non-aqueous composition including

(a) an organic solvent; and
(b) at least one additive of formulae I or II










where

R1 is H
R2 is selected from the group consisting of H, C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R3 is selected from the group consisting of R2,
R4 is selected from the group consisting of C1 to C10 alkyl, C1 to C10 alkoxy, C6 to C10 aryl, and C6 to C10 aroxy,
R10, R12 are independently selected from the group consisting of C1 to C19 alkyl and C1 to C10 alkoxy,
m is 1, 2 or 3, and
n is 0 or an integer from 1 to 100.

公开(公告)号：US20230235252A1

公开(公告)日：2023-07-27

申请号：US17999734

申请日：2021-05-12

Applicant: BASF SE

Inventor： Chi Yueh KAO ,  Mei Chin SHEN ,  Daniel LOEFFLER ,  Andreas KLIPP ,  Haci Osman GUEVENC

IPC: C11D7/04 ,  C11D7/50 ,  C11D11/00 ,  H01L21/02

CPC classification number: C11D7/04 ,  C11D7/5022 ,  C11D11/0047 ,  H01L21/02063

Abstract: Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C1 to C4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

公开(公告)号：US20200255772A1

公开(公告)日：2020-08-13

申请号：US16756303

申请日：2018-10-29

Applicant: BASF SE

Inventor： Daniel LOEFFLER ,  Mei Chin SHEN ,  Sheng Hsuan WEI ,  Frank PIRRUNG ,  Lothar ENGELBRECHT ,  Yeni BURK ,  Andreas KLIPP ,  Marcel BRILL ,  Szilard CSIHONY

IPC: C11D3/37 ,  G03F7/40 ,  C11D7/50 ,  H01L21/02

Abstract: The invention relates to the use of a non-aqueous composition comprising an organic solvent and at least one particular siloxane-type additive for treating substrates comprising patterns having line-space dimensions of 50 nm or below and aspect ratios of 4 or more as well as a method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices, the said method comprising the steps of (1) providing a substrate having patterned material layers having line-space dimensions of 50 nm, aspect ratios of greater or equal 4, or a combination thereof, (2) contacting the substrate at least once with a non-aqueous composition, and (3) removing the non-aqueous composition from the contact with the substrate, wherein the non-aqueous composition comprising an organic solvent and at least one of such siloxane-type additives.