公开(公告)号：DE69430568T2

公开(公告)日：2003-01-09

申请号：DE69430568

申请日：1994-02-01

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： FAHLEN S ,  DUBOC M ,  CURTIN J ,  SPINDT J ,  LOVOI A ,  NOWICKI S ,  MORRIS L ,  SCHMID P

IPC: H01J9/18 ,  H01J9/227 ,  H01J9/24 ,  H01J17/49 ,  H01J29/02 ,  H01J29/08 ,  H01J29/32 ,  H01J29/46 ,  H01J29/86 ,  H01J29/87 ,  H01J31/12 ,  H01J61/30 ,  H01J63/02 ,  H01J9/26 ,  H01J29/82

公开(公告)号：DE69430568D1

公开(公告)日：2002-06-13

申请号：DE69430568

申请日：1994-02-01

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： FAHLEN S ,  DUBOC M ,  CURTIN J ,  SPINDT J ,  LOVOI A ,  NOWICKI S ,  MORRIS L ,  SCHMID P

IPC: H01J9/18 ,  H01J9/227 ,  H01J9/24 ,  H01J17/49 ,  H01J29/02 ,  H01J29/08 ,  H01J29/32 ,  H01J29/46 ,  H01J29/86 ,  H01J29/87 ,  H01J31/12 ,  H01J61/30 ,  H01J63/02 ,  H01J9/26 ,  H01J29/82

公开(公告)号：DE69835013T2

公开(公告)日：2007-01-11

申请号：DE69835013

申请日：1998-05-26

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： SPINDT J ,  OBERG J ,  HAVEN A ,  BARTON ROGER W ,  LEARN J ,  BASCOM A

IPC: H01J3/18 ,  H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J9/50 ,  H01J31/12

Abstract: An electron-emitting device utilizes an emitter electrode (12) shaped like a ladder in which a line of emitter openings (18) extend through the electrode. In fabricating the device, the emitter openings can be utilized to self-align certain edges, such as edges (38C) of a focusing system (37), to other edges, such as edges (28C) of control electrodes (28), to obtain desired lateral spacings. The self-alignment is typically achieved with the assistance of a backside photolithographic exposure operation. The ladder shape of the emitter electrode also facilitates the removal of short-circuit defects involving the electrode.

公开(公告)号：DE69730333T2

公开(公告)日：2005-09-01

申请号：DE69730333

申请日：1997-06-05

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： LUDWIG N ,  HAVEN A ,  MACAULAY M ,  SPINDT J ,  CLEEVES M ,  KNALL JOHAN

IPC: H01J9/02 ,  H01J1/304

公开(公告)号：DE69827801D1

公开(公告)日：2004-12-30

申请号：DE69827801

申请日：1998-02-10

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： PORTER D ,  CHAKAROVA S ,  KNALL JOHAN ,  SPINDT J

IPC: C25F3/02 ,  B81C1/00 ,  C25F3/14 ,  H01J9/02 ,  C25D5/02 ,  C25D5/48 ,  B23H3/00 ,  H01J1/02 ,  H01J1/62 ,  B44C1/22

Abstract: A method for forming a field emitter structure. In one embodiment, the present invention creates a structure having a cavity formed into an insulating layer overlying a first electrically conductive layer. The present invention also creates a second electrically conductive layer with an opening formed above the cavity in the insulating layer. The present embodiment deposits a layer of electron emissive material directly onto the second electrically conductive layer without first depositing an underlying lift-off layer such that the electron emissive material covers the opening in the second electrically conductive layer and forms an electron emissive element within the cavity. The present invention applies a first potential to the first electrically conductive layer, such that the first potential is imparted to the electron emissive element formed within the cavity. The present invention also applies a second potential to the second electrically conductive layer, such that the second potential is imparted to the closure layer of electron emissive material. In the present embodiment, the second potential comprises an open circuit potential. The present invention then exposes the field emitter structure to an electrochemical etchant wherein the electrochemical etchant etches electron emissive material which is biased at the open circuit potential. In so doing, the layer of electron emissive material is removed from above the second electrically conductive layer without etching the electron emissive element formed within the cavity.

公开(公告)号：DE69730333D1

公开(公告)日：2004-09-23

申请号：DE69730333

申请日：1997-06-05

Applicant: CANDESCENT INTELLECTUAL PROP

Inventor： LUDWIG N ,  HAVEN A ,  MACAULAY M ,  SPINDT J ,  CLEEVES M ,  KNALL JOHAN

IPC: H01J9/02 ,  H01J1/304