公开(公告)号：JP2000173451A

公开(公告)日：2000-06-23

申请号：JP34845398

申请日：1998-12-08

Applicant: CANON KK

Inventor： AEBA TOSHIAKI ,  UENO RIE ,  MOTOI YASUKO ,  NAKAMURA HISAMI ,  SHIBATA MASAAKI ,  YAMANOBE MASATO

IPC: H01J9/02 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a stable and long life electron emitting characteristic and to control the degradation of an element caused by discharge, by forming a clearance in a part of a thin conductive film, arranging first films having carbon in this clearance and on the thin conductive film, and arranging a second film having carbon on the first film having carbon. SOLUTION: A pair of element electrodes 2, 3 is facingly arranged on a board 1, and a thin conductive film 4 is separated right and left and is facingly arranged on the surface of the board 1 on the both sides of a clearance 6 formed in a part of the thin conductive film 4 in a forming process or the like. Films 10 having carbon as a deposit are arranged on the board 1 in a first clearance, namely the clearance 6 and on the thin conductive film 4 close to it. These films 10 having carbon are facingly arranged transversely to the surface of the board 1, on the both sides of a second clearance, namely a clearance 7, placed in the clearance 6. The films 10 having carbon as the deposit are deposited over the element electrodes 2, 3 and can be interconnected depending on a condition such as a distance L between the element electrodes.

公开(公告)号：JP2000094154A

公开(公告)日：2000-04-04

申请号：JP26976798

申请日：1998-09-24

Applicant: CANON KK

Inventor： AEBA TOSHIAKI

IPC: H01J37/305 ,  B23K15/00 ,  B23K15/08 ,  C23F4/00

Abstract: PROBLEM TO BE SOLVED: To shorten the irradiation time of the ion beam, and to reduce the volume of a tapered part of a through-hole in forming the through-hole whose depth is large compared with the area of a machined part by effecting the etching from both face and back sides of a work to form the through-hole. SOLUTION: A part 41 to be machined of a work 3 is scanned with the ion beam 2 while controlling the part to be machined by the ion optical system. The part 41 to be machined is etched in the depth direction, and a hole 51 is gradually deeper When the depth of the hole 51 is about one half of the thickness of the work 3, the irradiation of the ion beam 2 is stopped once. The work 3 is inverted, and a part 42 to be machined of a back side is scanned with the ion beam 2. The part 42 to be machined is etched in the depth direction, and a hole 52 is gradually deeper to finally form a through-hole 6. The depth of the holes 51, 52 necessary for forming the through the through-hole 6 is about one half of the thickness of the work 3 for each side, the drop in the machining speed is suppressed, the machining time is shortened, and the volume of a tapered part can be reduced to, for example, about 1/3.

公开(公告)号：JP2000082391A

公开(公告)日：2000-03-21

申请号：JP25434598

申请日：1998-09-08

Applicant: CANON KK

Inventor： AEBA TOSHIAKI

IPC: H01J9/02 ,  H01J1/316 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a uniform electron emission film by forming an under coating layer on a substrate, forming an electrode member out of a different material from the under coating layer thereon, irradiating the electrode member with a laser to form an element electrode having a desired shape and removing only the under coating layer. SOLUTION: A first layer 21 being an under coating layer is formed on a substrate 1 using a heat-resistant metal material by a vacuum forming method. Next, a second layer 22 being an electrode member made of a metal film having a lower melting point than the first layer 21 is film-formed by a vacuum forming method. A laser is applied to the film on the substrate to work the element electrode to a desired shape. At this time, of the film at the portion being subjected to the irradiation with a laser, the second layer 22 made of a metal film having a low melting point is removed and since the first layer 21 is formed out of a heat-resistant metal material, it is not removed from the surface of the substrate 1 and is remained. Here, when the irradiation is carried out by a laser, a laser beam is formed by a mask and is applied on the surface of the substrate 1 as a laser beam having an optional shape. Further, the first layer 21 is removed by an ion irradiation, wet or dry etching to form an element electrode.

公开(公告)号：JPH09102270A

公开(公告)日：1997-04-15

申请号：JP28437695

申请日：1995-10-06

Applicant: CANON KK

Inventor： AEBA TOSHIAKI

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide a favorable electron emitting element little in dispersion of property at low cost, by giving the liquid drops of metallic composition solution between the electrodes counterposed on both sides of the recess made on the surface of a substrate, and performing current application processing after baking by heating. SOLUTION: A recess 6 of specified dimension is made by photolithography or the like, on the surface of a high insulating substrate 1 of quartz glass or the like. Next, on both sides of this recess 6 are a pair of element electrodes 2 and 3 made in specified dimension by printing technique. In the recess 6b between these opposed electrodes are drops 22 of metallic composition solution such as palladium or the like including electron emitting material given. It is to be desired that these liquid drops 22 should be supplied, using an ink jet system or bubble jet system of liquid drop giving means 21. Hereby, the liquid reservoir 23 straddling both electrodes is made accurately in the recess 6. Next, after drying of this liquid reservoir 23, it is heated to about 300-380 deg.C for baking. Then, an electron emitter 5 is made by applying current application processing to the conductive film 4 made with this.

公开(公告)号：JPH05121325A

公开(公告)日：1993-05-18

申请号：JP30831091

申请日：1991-10-29

Applicant: CANON KK

Inventor： AEBA TOSHIAKI ,  OTSUKA MITSURU ,  MORISHITA MASAKAZU

IPC: C30B1/02 ,  C30B25/00 ,  C30B29/06 ,  C30B33/02 ,  C30B33/04 ,  H01L21/20 ,  H01L21/265

Abstract: PURPOSE:To obtain a method of forming a seed such that the micro dimension of seed is obtained and an active region including the seed can be flattened and contamination on the surface of a film is little. CONSTITUTION:A polycrystalline Si film is formed in a recess made in the surface of a quartz glass substrate 1 and an SiN film 3. Then, by ion implantation to the polycrystalline Si film in a slant direction, most of region 7 of the ion-implanted polycrystalline film is formed amorphously, while a region 6 of the no ion-implanted polycrystalline film is left as a seed. Since ions are blocked in the region of the polycrystalline film near the edge of the recess, thus, a part of the polycrystalline film is not formed amorphously. As a result, the seed of the polycrystal can be left in the region formed amorphously, and the micro seed can be formed by self-alignment process without using a resist.

公开(公告)号：JPS62186266A

公开(公告)日：1987-08-14

申请号：JP2687286

申请日：1986-02-12

Applicant: CANON KK

Inventor： AEBA TOSHIAKI ,  SATO YASUBUMI

IPC: H05K3/06 ,  G03F7/30

Abstract: PURPOSE:To obtain a work having stable characteristics by controlling the concn. of a pattern forming agent dissolved in a developing soln. thereby executing good development and automatically exchanging the developing soln. CONSTITUTION:The work 4 is immersed in the developing soln. A sensor 5 which is a detecting part of measuring means such as visible and UV photometers, refractometer, COD measuring instrument of DOC measuring instrument is dipped and provided in the developing soln. Whether the developing soln. is usable or not is judged by the concn. of the pattern forming agent detected by the sensor 5, by which the soln. control is executed. A display part 7 which displays the concn. of the pattern forming agent, a recording part 8 which records the concn. of the pattern forming agent, an alarm part 9 which alarms the increase of the concn. of the pattern forming agent when said concn. increases to the value above the prescribed value (permissible value) and selector valves 10, 11 are connected to the control part 6. The selector valve 10 is interposed in a discharge pipe 12 to discharge the developing soln. in a developing tank 1 and the selector valve 1 is interposed into a supply pipe 14 to supply the fresh developing soln. 2 from a storage tank 13 into the developing tank 1.

公开(公告)号：JP2002326199A

公开(公告)日：2002-11-12

申请号：JP2001129376

申请日：2001-04-26

Applicant: CANON KK

Inventor： AEBA TOSHIAKI ,  KURODA AKIRA

IPC: G02B5/00 ,  B23K15/00 ,  B81C1/00 ,  B82B3/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

Abstract: PROBLEM TO BE SOLVED: To provide a producing method of a micro-optical element capable of suppressing the generation of drift of a ion beam due to steep change in charging and accurately machining a micro opening portion, in machining by a focusing ion beam (FIB machining), a micro optical element by the producing method, and an optical device using the element. SOLUTION: The producing method of the micro-optical element forming an opening portion less than light wavelength comprises a process preparing a conductive lightproof film, an insulating light transmission base element, and a workpiece inserted between the conductive lightproof film and the insulating light transmission base element having a conductive light transmission film; and a process forming irradiating a focusing ion beam to the workpiece and forming the opening portion less than light wavelength at a required position by etching all of the conductive lightproof film and a part of conductive light transmission film.

公开(公告)号：JP2000311580A

公开(公告)日：2000-11-07

申请号：JP31928999

申请日：1999-11-10

Applicant: CANON KK

Inventor： SHIBATA MASAAKI ,  MOTOI YASUKO ,  AEBA TOSHIAKI ,  NAKAMURA HISAMI ,  UENO RIE ,  YAMANOBE MASATO

IPC: H01J31/12 ,  H01J1/316 ,  H01J29/04

Abstract: PROBLEM TO BE SOLVED: To provide a stable electron emitting element capable of enhancing thermal and chemical stability of a carbon film, having excellent electron emitting characteristics for a long time. SOLUTION: This electron emitting element has a substrate 1, first and second carbon films 10 disposed on the substrate 1 with a first space 7 interposed therebetween and first and second electrodes 2 and 3 electrically connected to the first and second carbon films 10, respectively. The carbon films 10 have an area with orientation; the direction of the orientation is approximately horizontal with respective to the surface of the substrate 1.

公开(公告)号：JP2000231872A

公开(公告)日：2000-08-22

申请号：JP31929099

申请日：1999-11-10

Applicant: CANON KK

Inventor： SHIBATA MASAAKI ,  MOTOI YASUKO ,  AEBA TOSHIAKI ,  NAKAMURA HISAMI ,  UENO RIE ,  YAMANOBE MASATO

IPC: H01J29/04 ,  H01J1/316 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To provide excellent electron emitting characteristics and highly bright display for a long time by disposing the narrowest part of an interval between a first carbon film and a second carbon film in a first interval above the substrate surface and by providing a recessed part on a substrate at least in the first interval. SOLUTION: Conductive films 4a and 4b consist of a pair of conductive films opposed each other sandwiching a second interval 7 formed by a forming process. Carbon films 21a and 21b are disposed on a substrate 1 in a first interval 8 and on the conductive films 4a and 4b. The carbon films 21a and 21b are connected to an electrode through the conductive films 4a and 4b. In this case, the surface of the conductive films 4a and 4b is covered with the carbon films 21a and 21b. The first interval 8 separating the carbon films 21a and 21b has a narrower part above the substrate surface and above the conductive film surface in the normal direction with respect to the substrate surface. The substrate surface has a recessed shape.

公开(公告)号：JPH1040806A

公开(公告)日：1998-02-13

申请号：JP11264197

申请日：1997-04-30

Applicant: CANON KK

Inventor： MITOME MASANORI ,  AEBA TOSHIAKI ,  MATSUTANI SHIGEKI ,  OKUDA MASAHIRO ,  TAKADA KAZUHIRO ,  ASAI AKIRA

IPC: H01J9/02 ,  H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

Abstract: PROBLEM TO BE SOLVED: To improve efficiency, defined to be a ratio of the current flowing through a surface conduction electron emission element to the current of electrons migrating to a pull-up electrode by controlling an electric field applied to electrons, emitted in advance into the outside (vacuum) of an element. SOLUTION: This device consists of an electron emission element having a conductive film containing an electron emission part, and an electrode for pulling up electrons. In this case, an electrically insulated long narrow region 6 is formed on the conductive films 4 and 5, so as to divide the conductive films 4 and 5 between a high and low electric potential section. The shape of the insulated region 6 is roughly periodical, as a combination of a part bent toward a high electric potential section with a part bent toward a low electric potential section. The part bent toward a high electric potential section in a period of the insulated region 6 includes the continuous electric emission part in a linearly continuos shape.