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公开(公告)号：AU6592794A
公开(公告)日：1995-07-06
申请号：AU6592794
申请日：1994-06-23
Applicant: CANON KK
Inventor： NOMURA ICHIRO , YAMANOBE MASATO , SUZUKI HIDETOSHI , TAKEDA TOSHIHIKO , IWASAKI TATSUYA
IPC: H01J1/30 , G06F3/147 , G09G3/20 , G09G3/22 , H01J1/316 , H01J31/12 , H04N3/12 , H01J31/00 , H01J31/10 , H01J29/00 , H01J29/46
Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.
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公开(公告)号：AU5927794A
公开(公告)日：1994-10-06
申请号：AU5927794
申请日：1994-04-05
Applicant: CANON KK
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公开(公告)号：BRPI0615942A2
公开(公告)日：2012-12-18
申请号：BRPI0615942
申请日：2006-09-05
Applicant: CANON KK
Inventor： IWASAKI TATSUYA , DEN TORU , ITAGAKI NAHO
IPC: H01L29/786
Abstract: Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In + Zn) is not less than 35 atomic% and not more than 55 atomic%. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In + Zn + Ga) is set to be 30 atomic% or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.
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公开(公告)号：DE69909538D1
公开(公告)日：2003-08-21
申请号：DE69909538
申请日：1999-02-15
Applicant: CANON KK
Inventor： YAMASHITA MASATAKA , IWASAKI TATSUYA , KAWADE HISAAKI , ONO TAKEO , OHNISHI TOSHIKAZU
IPC: H01J9/02
Abstract: A method for producing an electron-emitting device comprising an electroconductive film having an electron-emitting region between electrodes, wherein a step of forming the electron-emitting region in the electroconductive film comprises steps of heating and energizing the electroconductive film, wherein an atmosphere in which a gas for promoting cohesion of the electroconductive film is introduced following the start of those steps of heating and energising.
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公开(公告)号：DE69531028D1
公开(公告)日：2003-07-17
申请号：DE69531028
申请日：1995-07-31
Applicant: CANON KK
Inventor： IWASAKI TATSUYA , YAMANOBE MASATO , TSUKAMOTO TAKEO , YAMAMOTO KEISUKE , HAMAMOTO YASUHIRO
Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
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Patent Agency Ranking
公开(公告)号：CA2295411C
公开(公告)日：2003-02-04
申请号：CA2295411
申请日：1994-06-22
Applicant: CANON KK
Inventor： YAMANOBE MASATO , SUZUKI HIDETOSHI , TAKEDA TOSHIHIKO , IWASAKI TATSUYA , NOMURA ICHIRO
IPC: H01J1/308
Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.
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公开(公告)号：DE69431341T2
公开(公告)日：2003-01-30
申请号：DE69431341
申请日：1994-06-24
Applicant: CANON KK
Inventor： NOMURA ICHIRO , YAMANOBE MASATO , SUZUKI HIDETOSHI , TAKEDA TOSHIHIKO , IWASAKI TATSUYA
Abstract: In an electron beam apparatus comprising an enclosure in which an electron-emitting device having an electron-emitting region between opposite electrodes is disposed, the electron-emitting device exhibits such a characteristic as that an emission current is uniquely determined with respect to a device voltage. The interior of the enclosure is maintained under an atmosphere effective to prevent structural changes of the electron-emitting device. An image-forming apparatus comprises an enclosure in which an electron source and an image-forming member are disposed, the electron source comprising the above electron-emitting device. An emission current is stable with a very small change in the amount of electrons emitted, a sharp image is produced with high contrast, and gradation control is easily carried out.
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公开(公告)号：CA2155062C
公开(公告)日：2002-06-25
申请号：CA2155062
申请日：1995-07-31
Applicant: CANON KK
Inventor： IWASAKI TATSUYA , YAMANOBE MASATO , TSUKAMOTO TAKEO , YAMAMOTO KEISUKE , HAMAMOTO YASUHIRO
Abstract: In an electron-emitting device including, between electrodes, an electroconductive film having an electron emitting region, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having the higher melting point than that of a material of the electroconductive film. Alternatively, the electroconductive film has a film formed in the electron emitting region and made primarily of a material having a higher temperature, at which the material develops a vapor pressure of 1.3 x 10-3 Pa, than that of a material of the electroconductive film. A manufacture method of an electron-emitting device includes a step of forming a film made primarily of a metal in the electron emitting region of the electroconductive film. The electron-emitting device has stable characteristics and improved efficiency of electron emission. An image-forming apparatus comprising the electron-emitting devices has high luminance and excellent stability in operation.
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公开(公告)号：DE69516945T2
公开(公告)日：2000-10-05
申请号：DE69516945
申请日：1995-07-10
Applicant: CANON KK
Inventor： IKEDA SOTOMITSU , OHNISHI TOSHIKAZU , YAMANOBE MASATO , IWASAKI TATSUYA , KAWADE HISAAKI
Abstract: An electron-emitting device has a pair of device electrodes and an electroconductive thin film including an electron emitting region arranged between the electrodes. The device is manufactured via an activation process for increasing the emission current of the device. The activation process includes steps of a) applying a voltage (Vact) to the electroconductive thin film having a gap section under initial conditions, b) detecting the electric performance of the electroconductive thin film and c) modifying, if necessary, the initial conditions as a function of the detected electric performance of the electroconductive thin film.
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公开(公告)号：AU717388B2
公开(公告)日：2000-03-23
申请号：AU4687197
申请日：1997-12-04
Applicant: CANON KK
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