公开(公告)号：AU4715300A

公开(公告)日：2000-11-17

申请号：AU4715300

申请日：2000-05-03

Applicant: ETEC SYSTEMS INC

Inventor： LEE KIM Y ,  KIM HOSEOB ,  MANKOS MARIAN ,  MURAY LAWRENCE ,  CHANG T H P

IPC: G03F1/16 ,  G03F7/20 ,  G03F9/00 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: A method, an associated structure, and an apparatus for multiple charged particle beam calibration and shielded charged particle lithography. A template defining an array of membranes is positioned above a target (e.g., a semiconductor wafer of the electron beams). Each membrane defines a through slot (opening) and a set of registration marks which are located with respect to registration marks of the other membranes. Patterns are written onto the target by scanning each electron beam through its associated through slot. Intra- and inter-charged particle beam calibrations for each charged particle beam are carried out using its associated set of registration marks. The template also suppresses undesirable electrical charging of any resist present on the target during the exposure process.

公开(公告)号：AU4013300A

公开(公告)日：2000-10-04

申请号：AU4013300

申请日：2000-03-15

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  VENEKLASEN LEE H

IPC: G03F7/20 ,  H01J37/073 ,  H01J37/12 ,  H01J37/145 ,  H01J37/305 ,  H01L21/027 ,  G03F7/00

Abstract: An improved compact tandem photon and electron beam lithography system includes a field lens adjacent the photoemission source which is utilized in combination with an objective lens to minimize field aberrations in the usable emission pattern and minimize the interaction between electrons to improve the throughput of the system. If desired, a demagnifying lens can be utilized between the field lens and the objective lens to increase the demagnification ratio of the system.

公开(公告)号：CA2296583A1

公开(公告)日：1999-11-11

申请号：CA2296583

申请日：1999-04-28

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN

IPC: G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: A charged particle beam column (100) efficiently illuminates a blanking aperture array (108) by splitting a charged particle beam (110) into multiple charged particle beams and focusing each charge particle beam on a separate aperture of the blanking aperture array (108). Where an electron source with a small effective source size is used, for example an electron field emission source or Schottky source, crossovers of the individual beams may occur within the separate apertures of the blanking aperture array. Consequently, no demagnification of the beams passing through the blanking aperture array is necessary to form a small exposure pixel on the writing plane. A beam splitter, shown as biprism (104) is aligned perpendicularly to optical axis (A) and splits electron beam (110) into separate beamlets.

公开(公告)号：AU3384099A

公开(公告)日：1999-11-01

申请号：AU3384099

申请日：1999-04-05

Applicant: ETEC SYSTEMS INC

Inventor： VENEKLASEN LEE H ,  CHANG TAI-HON P ,  MANKOS MARIAN

IPC: G03F1/08 ,  G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: A shaped electron beam column focuses electrons from an electron source to produce a shadow image of a shaped aperture on a writing plane. The shadow image of the shaped aperture is the defocused image of a shape aperture. This defocused shadow image is in the the object plane of the shaped electron beam column. The shadow image in the writing plane is defocused because an electron beam lens produces a focused image of the electron source off the writing plane. The size of the shadow image on the writing plane may be altered by adjusting the electron beam lens to change the distance between the electron source image and the writing plane, i.e., defocus. Thus, a relatively large shaped aperture may be used in comparison to shaped apertures used in conventional electron beam columns. Further, only a small total linear demagnification may be used, which permits the length of the shaped electron beam column to be decreased. Consequently, the electron-electron interactions are reduced resulting in increased edge resolution of the image on the writing plane and increased current in the shaped electron beam column thereby increasing throughput.

公开(公告)号：AU4860300A

公开(公告)日：2000-11-17

申请号：AU4860300

申请日：2000-05-03

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  CHANG TAI-HON P

IPC: G21K5/04 ,  H01J37/02 ,  H01J37/073 ,  H01J37/12 ,  H01J37/20 ,  H01L21/027 ,  H01J1/30

Abstract: A system for reducing surface charge on a target surface in charged particle beam lithography or microscopy, using an apparatus including: a beam column that outputs a charged particle beam towards the surface; and a charge reducing device positioned between the surface and the beam column, where the charge reducing device emits charged particles to neutralize charge on the surface. The charge reducing device can include a MOS device and a voltage source, where the voltage source is coupled to provide a voltage across the MOS device to cause the MOS device to emit the charged particles. The charge reducing device can include multiple MOS devices mounted on a mechanical mount and a voltage source, where the voltage source is coupled to provide a voltage across the MOS devices to cause the MOS devices to emit the charged particles. The associated method for reducing surface charge on a surface includes outputting the charged particle beam towards the target surface and emitting charged particles to neutralize the resulting charge on the surface.

公开(公告)号：WO0067289A9

公开(公告)日：2002-08-08

申请号：PCT/US0040017

申请日：2000-05-03

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  CHANG TAI-HON P

IPC: G21K5/04 ,  H01J37/02 ,  H01J37/073 ,  H01J37/12 ,  H01J37/20 ,  H01L21/027 ,  H01J1/30

CPC classification number: H01J37/026 ,  H01J2237/0044

Abstract: A system for reducing surface charge on a target surface in charged particle beam lithography or microscopy, using an apparatus including: a beam column that outputs a charged particle beam towards the surface; and a charge reducing device positioned between the surface and the beam column, where the charge reducing device emits charged particles to neutralize charge on the surface. The charge reducing device can include a MOS device and a voltage source, where the voltage source is coupled to provide a voltage across the MOS device to cause the MOS device to emit the charged particles. The charge reducing device can include multiple MOS devices mounted on a mechanical mount and a voltage source, where the voltage source is coupled to provide a voltage across the MOS devices to cause the MOS devices to emit the charged particles. The associated method for reducing surface charge on a surface includes outputting the charged particle beam towards the target surface and emitting charged particles to neutralize the resulting charge on the surface.

Abstract translation: 一种用于减少带电粒子束光刻或显微镜中的目标表面上的表面电荷的系统，使用的装置包括：束柱，其向所述表面输出带电粒子束; 以及位于表面和束柱之间的电荷减少装置，其中电荷减少装置发射带电粒子以中和表面上的电荷。 电荷减少装置可以包括MOS器件和电压源，其中电压源被耦合以提供跨越MOS器件的电压，以使MOS器件发射带电粒子。 电荷减少装置可以包括安装在机械安装座和电压源上的多个MOS器件，其中电压源被耦合以提供MOS器件两端的电压，以使MOS器件发射带电粒子。 用于减少表面上的表面电荷的相关方法包括将带电粒子束朝向目标表面输出并发射带电粒子以中和所得表面上的电荷。

公开(公告)号：WO0031769A9

公开(公告)日：2001-05-17

申请号：PCT/US9927689

申请日：1999-11-22

Applicant: ETEC SYSTEMS INC

Inventor： MANKOS MARIAN ,  CHANG T H P ,  MURAY LAWRENCE ,  KIM HO-SEOB ,  LEE KIM Y

IPC: G01N23/203 ,  G01N23/225 ,  G21K1/087 ,  G21K5/04 ,  H01J37/12 ,  H01J37/244 ,  H01J37/28 ,  H01J37/30

CPC classification number: H01J37/244 ,  H01J2237/1205

Abstract: A structure and associated method for detecting secondary and backscatter electrons in a microcolumn. A secondary electron detector and a backscatter electron detector, both located upstream of the Einzel (objective) lens in the microcolumn, provide a highly efficient axially symmetric electron detector, short column length, and short working distance. The secondary electron detector is located between the deflection system and the Einzel lens, between the suppressor plate and the Einzel lens, or between the deflection system and the beam-limiting aperture. The backscatter electron detector is located between a beam-limiting aperture and the deflection system and can be incorporated into the aperture. A secondary electron extractor placed between the sample and the Einzel lens further improves the spatial resolution caused by surface imperfection or local surface potential on the sample surface.

Abstract translation: 用于在微柱中检测次级和反向散射电子的结构和相关方法。 位于微柱中的Einzel（物镜）镜头上游的二次电子检测器和反向散射电子检测器提供了高效的轴对称电子检测器，柱长短，工作距离短。 二次电子检测器位于偏转系统和Einzel透镜之间，位于抑制板和Einzel透镜之间，或位于偏转系统和光束限制孔之间。 反向散射电子检测器位于光束限制孔和偏转系统之间，并且可以结合到孔中。 放置在样品和Einzel透镜之间的二次电子提取器进一步改善了由表面缺陷或样品表面上的局部表面电位引起的空间分辨率。