Lamella creation method and device using fixed-angle beam and rotating sample stage
    11.
    发明公开
    Lamella creation method and device using fixed-angle beam and rotating sample stage 审中-公开
    板条利用角度稳定的支撑成形方法和装置以及旋转样品台

    公开(公告)号:EP2674742A2

    公开(公告)日:2013-12-18

    申请号:EP13171169.9

    申请日:2013-06-10

    Applicant: FEI COMPANY

    CPC classification number: G01N1/32 H01J37/3023 H01J37/3056 H01J2237/31745

    Abstract: A method and system for creating a substantially planar face in a substrate, the method including directing one or more beams at a first surface of a substrate to remove material from a first location in the substrate, the beam being offset from a normal to the first surface by a nonzero curtaining angle; sweeping the one or more beams in a plane that is perpendicular to the first surface to mill one or more initial cuts in the substrate, the initial cuts exposing a second surface that is substantially perpendicular to the first surface; rotating the substrate through a nonzero rotation angle about an axis other than an axis that is normal to the first beam or parallel to the first beam; directing the first beam at the second surface to remove additional material from the substrate without changing the first nonzero curtaining angle; and scanning the one or more beams in a pattern across the second surface to mill one or more finishing cuts in the substrate.

    Abstract translation: 一种用于在基片创建基本上平坦的面,所述方法包括在一衬底以从衬底的第一位置移除材料的第一表面引导一个或多个波束的方法和系统中,光束被从正常偏移到所述第一 表面由一个非零垂落角; 在一个平面席卷一个或多个波束并垂直于所述第一表面到磨机中的一个或更多衬底初始切口,初始切口暴露的第二表面所做的是基本上垂直于所述第一表面上; 通过围绕轴线上以外于轴线即垂直于第一光束或平行于所述第一光束非零旋转角度旋转所述基片; 在第二表面引导所述第一光束,以除去从基板附加材料,而不改变第一个非零垂落角; 并扫描一个或多个光束在穿过所述第二表面的图案,以磨中的一个或更多衬底精加工切削。

    Charged particle beam processing using a cluster source
    13.
    发明公开
    Charged particle beam processing using a cluster source 有权
    由群集源装置Ladungsträgerteilchenstrahlbearbeitung

    公开(公告)号:EP1918963A3

    公开(公告)日:2009-10-21

    申请号:EP07119687.7

    申请日:2007-10-31

    Applicant: FEI COMPANY

    Abstract: A cluster source producing a beam of charged clusters 108 is used to assist charged particle beam processing on a work piece 112. For example, a protective layer is applied using a cluster source and a precursor gas, the gas being supplied by a gas injection system 104. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface of the work piece. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas. An additional charged particle beam 107 can assist in machining the work piece when e.g. a protective layer is applied.

    INTEGRATED LIGHT OPTICS AND GAS DELIVERY IN A CHARGED PARTICLE LENS
    15.
    发明公开
    INTEGRATED LIGHT OPTICS AND GAS DELIVERY IN A CHARGED PARTICLE LENS 审中-公开
    加拿大富士康集团在伊朗LADUNGSTEILCHENLINSE集团

    公开(公告)号:EP3113207A1

    公开(公告)日:2017-01-04

    申请号:EP15174195.6

    申请日:2015-06-29

    Applicant: FEI Company

    CPC classification number: H01J37/228 H01J2237/31744

    Abstract: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.

    Abstract translation: 一种用于将光或气体或两者引导到位于距带电粒子束柱的下端约2mm内的样本的方法和装置。 带电粒子束列组件包括限定样品保持位置的平台,并具有一组静电透镜,每组包括一组电极。 组件包括最终静电透镜,其包括最靠近样品保持位置的最终电极。 该最终电极限定至少一个内部通道,其具有靠近并指向试样保持位置的终端。

    High Selectivity, Low Damage Electron-Beam Delineation Etch
    18.
    发明公开
    High Selectivity, Low Damage Electron-Beam Delineation Etch 有权
    Elektronenstrahl-Skizzenätzungmit hoherSelektivitätund geringerSchädigung

    公开(公告)号:EP2214200A2

    公开(公告)日:2010-08-04

    申请号:EP10152144.1

    申请日:2010-01-29

    Applicant: FEI COMPANY

    CPC classification number: H01L21/306 H01L21/3065 H01L21/31116 H01L21/32137

    Abstract: A method and apparatus for selective etching a substrate using a focused beam. For example, multiple gases may be used that are involved in competing beam-induced and spontaneous reactions, with the result depending on the materials on the substrate. The gases may include, for example, an etchant gas and an auxiliary gas that inhibits etching.

    Abstract translation: 一种使用聚焦光束选择性蚀刻衬底的方法和装置。 例如,可以使用涉及光束诱导和自发反应的多种气体,结果取决于衬底上的材料。 气体可以包括例如蚀刻剂气体和抑制蚀刻的辅助气体。

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