公开(公告)号：EP3243931A1

公开(公告)日：2017-11-15

申请号：EP16187654.5

申请日：2016-09-07

Applicant: FEI Company

Inventor： Kianinia, Mehran ,  Shimoni, Olga ,  Aharonovich, Igor ,  Lobo, Charlene ,  Toth, Milos ,  Randolph, Steven ,  Chandler, Clive

IPC: C23F4/02 ,  C25D5/02 ,  H01J37/18 ,  H01J37/30

Abstract: Beam-induced deposition decomposes a precursor at precise positions on a surface. The surface is processed to provide linker groups on the surface of the deposit, and the sample is processed to attach nano-objects to the linker groups. The nano-objects are used in a variety of application. When a charged particle beam is used to decompose the precursor, the charged particle beam can be used to form an image of the surface with the nano-objects attached.

Abstract translation: 光束诱导沉积在表面上的精确位置分解前体。 处理表面以在沉积物的表面上提供连接基团，并且处理样品以将纳米物体连接至连接基团。 纳米物体用于各种应用。 当使用带电粒子束来分解前体时，带电粒子束可以用来形成附着有纳米物体的表面的图像。

公开(公告)号：EP2309020A1

公开(公告)日：2011-04-13

申请号：EP10178148.2

申请日：2010-09-22

Applicant: FEI COMPANY

Inventor： Lobo, Charlene ,  Toth, Milos ,  Randolph, Steven ,  Chandler, Clive

IPC: C23C14/00 ,  C23C14/04 ,  C23C14/22 ,  C23C14/46 ,  C23C14/54 ,  C23C14/58

CPC classification number: C23C14/0031 ,  C23C14/04 ,  C23C14/048 ,  C23C14/221 ,  C23C14/46 ,  C23C14/54 ,  C23C14/548 ,  C23C14/5846 ,  C23C14/5873

Abstract: A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas. By co-injecting or premixing the deposition or etch precursor gas and film purification compound prior to injection, the deposition or etch process may be optimized with respect to growth/etch rate and achievable material purity.

Abstract translation: 用于束诱导沉积或蚀刻的系统，其中带电粒子或激光束可以被定向到单个真空室内的工件，正常入射或以一定角度。 在工件的光束照射的同时，沉积或蚀刻前体气体在注入到处理室之前与净化化合物和（任选的）载气共注入或预混合。 光束分解沉积前体气体以仅在由光束照射的区域中沉积膜，或者分解蚀刻前体气体以仅在由光束照射的区域中蚀刻膜。 通过与通过膜与纯化组合物的吸附分子的相互作用产生的工件表面上的吸附物质的相互作用，在膜生长过程中，除去沉积膜中的不期望的杂质如碳。 或者，膜纯化化合物可用于抑制由蚀刻前体气体蚀刻的材料的氧化。 通过在注入之前共沉积或预混合沉积或蚀刻前体气体和膜纯化化合物，可以相对于生长/蚀刻速率和可实现的材料纯度优化沉积或蚀刻工艺。

公开(公告)号：EP2674742A3

公开(公告)日：2014-02-12

申请号：EP13171169.9

申请日：2013-06-10

Applicant: FEI COMPANY

Inventor： Wells, Andrew ,  Parker, N. William ,  Chandler, Clive ,  Utlaut, Mark

IPC: G01N1/32

CPC classification number: G01N1/32 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/31745

Abstract: A method and system for creating a substantially planar face in a substrate, the method including directing one or more beams at a first surface of a substrate to remove material from a first location in the substrate, the beam being offset from a normal to the first surface by a nonzero curtaining angle; sweeping the one or more beams in a plane that is perpendicular to the first surface to mill one or more initial cuts in the substrate, the initial cuts exposing a second surface that is substantially perpendicular to the first surface; rotating the substrate through a nonzero rotation angle about an axis other than an axis that is normal to the first beam or parallel to the first beam; directing the first beam at the second surface to remove additional material from the substrate without changing the first nonzero curtaining angle; and scanning the one or more beams in a pattern across the second surface to mill one or more finishing cuts in the substrate.

公开(公告)号：EP2481829A2

公开(公告)日：2012-08-01

申请号：EP12152793.1

申请日：2012-01-27

Applicant: FEI Company

Inventor： Randolph, Steven ,  Chandler, Clive

IPC: C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  H01J37/317

CPC classification number: C23C16/486 ,  C23C16/047 ,  C23C16/18 ,  C23C16/34 ,  C23C16/407 ,  H01J2237/31732 ,  H01L21/28556 ,  H01L21/76877 ,  H01L21/76892

Abstract: An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 µΩ·cm.

Abstract translation: 一种改进的光束沉积方法来沉积低电阻率金属。 本发明的优选实施方案使用新颖的聚焦离子束诱导沉积前体来沉积诸如锡的低电阻率金属材料。 申请人已经发现，通过使用甲基化或乙基化金属如六甲基锡作为前体，可以沉积具有低至40μΩcm的电阻率的材料。

公开(公告)号：EP3193351B1

公开(公告)日：2018-09-19

申请号：EP17150603.3

申请日：2017-01-09

Applicant: FEI Company

Inventor： Chandler, Clive

IPC: H01J37/305 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01J37/32522 ,  C23F4/00 ,  H01J37/3056 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/08 ,  H01J2237/2002 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/3341 ,  H01L21/02315 ,  H01L21/02689 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/32136 ,  H01L39/2477

Abstract: A micromachining process includes exposing the work piece surface 306 to a precursor gas comprising at least one compound selected from the group consisting of oxalyl halides, acetyl chloride and acetyl bromide; and irradiating the work piece surface with a beam in the presence of the precursor gas, the precursor gas reacting in the presence of the particle beam to remove material 304 from the work piece surface. The application also concerns a charged particle beam system adapted to carry out the process.

公开(公告)号：EP2716792A1

公开(公告)日：2014-04-09

申请号：EP12187384.8

申请日：2012-10-05

Applicant: FEI COMPANY

Inventor： Mulders, Hans ,  Randolph, Steven ,  Rue, Chad ,  Chandler, Clive

IPC: C23C16/48 ,  H01J37/317

CPC classification number: C23C16/486

Abstract: A process for deposition of high purity metal or metal oxide nano layers comprising:
directing a precursor fluid toward a substrate surface, and irradiating the substrate surface with a focused ion beam in the presence of the precursor fluid, the precursor fluid dissociating in the presence of the particle beam to deposit a metal or metal oxide on the substrate surface, characterized in that the focused ion beam comprises hydrogen or oxygen ions, and shaped nano layers of high purity metal obtainable by said process.

Abstract translation: 一种用于沉积高纯度金属或金属氧化物纳米层的方法，包括：将前体流体引向衬底表面，以及在存在前体流体的情况下用聚焦离子束照射衬底表面，所述前体流体在存在 所述粒子束在所述衬底表面上沉积金属或金属氧化物，其特征在于，所述聚焦离子束包括氢或氧离子以及通过所述方法可获得的成形纳米层的高纯度金属。

公开(公告)号：EP2481829A3

公开(公告)日：2012-09-12

申请号：EP12152793.1

申请日：2012-01-27

Applicant: FEI Company

Inventor： Randolph, Steven ,  Chandler, Clive

IPC: C23C16/04 ,  C23C16/34 ,  C23C16/40 ,  C23C16/48 ,  H01J37/317

CPC classification number: C23C16/486 ,  C23C16/047 ,  C23C16/18 ,  C23C16/34 ,  C23C16/407 ,  H01J2237/31732 ,  H01L21/28556 ,  H01L21/76877 ,  H01L21/76892

Abstract: An improved method of beam deposition to deposit a low-resistivity metal. Preferred embodiments of the present invention use a novel focused ion beam induced deposition precursor to deposit low-resistivity metallic material such as tin. Applicants have discovered that by using a methylated or ethylated metal such as hexamethylditin as a precursor, material can be deposited having a resistivity as low as 40 µΩ·cm.

公开(公告)号：EP1918963A2

公开(公告)日：2008-05-07

申请号：EP07119687.7

申请日：2007-10-31

Applicant: FEI COMPANY

Inventor： Chandler, Clive ,  Smith, Noel

IPC: H01J37/08 ,  H01J37/305

CPC classification number: H01L21/306 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/3142 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31742 ,  H01J2237/31744 ,  H01L21/67069

Abstract: A cluster source producing a beam of charged clusters 108 is used to assist charged particle beam processing on a work piece 112. For example, a protective layer is applied using a cluster source and a precursor gas, the gas being supplied by a gas injection system 104. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface of the work piece. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas. An additional charged particle beam 107 can assist in machining the work piece when e.g. a protective layer is applied.

Abstract translation: 产生带束团簇108的团簇源被用于辅助工件112上的带电粒子束处理。例如，使用团簇源和前体气体施加保护层，气体由气体注入系统 104.团簇的大质量和团簇中每个原子或分子的低能量限制了工件表面几纳米范围内的损伤。 富勒烯或富勒烯簇，铋，金或氙可以与前体气体一起使用以将材料沉积到表面上，或者可以与蚀刻剂气体一起用于蚀刻表面。 团簇也可用于将材料直接沉积到表面上以形成用于带电粒子束处理的保护层或提供激活蚀刻剂气体的能量。 附加的带电粒子束107可以辅助加工工件，例如， 应用保护层。

公开(公告)号：EP3193351A1

公开(公告)日：2017-07-19

申请号：EP17150603.3

申请日：2017-01-09

Applicant: FEI Company

Inventor： Chandler, Clive

IPC: H01J37/305 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01J37/32522 ,  C23F4/00 ,  H01J37/3056 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3174 ,  H01J2237/31745 ,  H01J2237/3341 ,  H01L21/02315 ,  H01L21/02689 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/32136 ,  H01L39/2477

Abstract: A micromachining process includes exposing the work piece surface 306 to a precursor gas comprising at least one compound selected from the group consisting of oxalyl halides, acetyl chloride and acetyl bromide; and irradiating the work piece surface with a beam in the presence of the precursor gas, the precursor gas reacting in the presence of the particle beam to remove material 304 from the work piece surface. The application also concerns a charged particle beam system adapted to carry out the process.

Abstract translation: 微机械加工工艺包括将工件表面306暴露于包含至少一种选自草酰卤，乙酰氯和乙酰溴的化合物的前体气体; 以及在存在前体气体的情况下用射束照射工件表面，前体气体在存在粒子束的情况下反应以从工件表面移除材料304。 本申请还涉及适合于执行该过程的带电粒子束系统。

公开(公告)号：EP2214200B1

公开(公告)日：2014-07-23

申请号：EP10152144.1

申请日：2010-01-29

Applicant: FEI COMPANY

Inventor： Randolph, Steven ,  Chandler, Clive

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/306 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137