公开(公告)号：EP3221903B1

公开(公告)日：2019-06-19

申请号：EP15897982.3

申请日：2015-07-14

Applicant: Goertek Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/32 ,  H01L25/075 ,  H01L33/00

公开(公告)号：EP3271953A1

公开(公告)日：2018-01-24

申请号：EP15892223.7

申请日：2015-05-21

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/48 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/00 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0033 ,  H01L2933/0066

Abstract: A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

公开(公告)号：EP3262852A1

公开(公告)日：2018-01-03

申请号：EP15907012.7

申请日：2015-10-30

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo

IPC: H04R19/04

CPC classification number: H04R3/04 ,  H04R1/227 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04 ,  H04R29/005 ,  H04R2201/003

Abstract: The present invention discloses a band-pass acoustic filter and an acoustic sensing apparatus. The band-pass acoustic filter including at least two MEMS microphone chips and an ASIC chip, wherein the output signals of the MEMS microphone chips are processed in the ASIC chip after being coupled.

公开(公告)号：EP3262694B1

公开(公告)日：2019-08-21

申请号：EP15906439.3

申请日：2015-10-20

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L25/075

公开(公告)号：EP3323145A1

公开(公告)日：2018-05-23

申请号：EP15897981.5

申请日：2015-07-14

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L21/70 ,  H01L33/00

CPC classification number: H01L24/97 ,  H01L24/81 ,  H01L24/83 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/81005 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/83005 ,  H01L2224/83143 ,  H01L2224/83851 ,  H01L2224/95001 ,  H01L2224/95144 ,  H01L2224/95145 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED comprises: forming micro-LEDs on a laser-transparent original substrate; irradiating the original substrate with laser from the original substrate side to lift-off the micro-LEDs from the original substrate; bring the micro-LEDs into contact with pads preset on a receiving substrate through a contactless action.

公开(公告)号：EP3262694A1

公开(公告)日：2018-01-03

申请号：EP15906439.3

申请日：2015-10-20

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/08

CPC classification number: H01L25/0753 ,  B81C3/001 ,  H01L21/673 ,  H01L21/67781 ,  H01L33/0079 ,  H01L2224/95

Abstract: The present invention discloses a transferring method, a manufacturing method, a device and an electronics apparatus of micro-LED. The method for transferring micro-LED at wafer level comprises: temporarily bonding micro-LEDs on a laser-transparent original substrate onto a carrier substrate via a first bonding layer; irradiating the original substrate with laser, to lift-off selected micro-LEDs; performing a partial release on the first bonding layer, to transfer the selected micro-LEDs to the carrier substrate; temporarily bonding the micro-LEDs on the carrier substrate onto a transfer head substrate via a second bonding layer; performing a full release on the first bonding layer, to transfer the micro-LEDs to the transfer head substrate; bonding the micro-LEDs on the transfer head substrate onto a receiving substrate; and removing the transfer head substrate by releasing the second bonding layer, to transfer the micro-LEDs to the receiving substrate.

公开(公告)号：EP3257072A1

公开(公告)日：2017-12-20

申请号：EP15903360.4

申请日：2015-09-09

Applicant: Goertek Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L21/677 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L24/03 ,  H01L25/0753 ,  H01L25/13 ,  H01L33/483 ,  H01L33/62 ,  H01L2224/83 ,  H01L2224/98 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2933/0066

Abstract: The present invention discloses a repairing method, manufacturing method, device and electronics apparatus of micro-LED. The method for repairing a micro-LED comprises: bringing a known-good micro-LED on a conductive pick-up head into contact with a first pad on an defective position of a receiving substrate, wherein the conductive pick-up head and the known-good micro-LED are bonded via a conductive adhesive; locally joule heating a first bonding layer through the conductive pick-up head, to melt the first bonding layer, wherein the first bonding layer is provided between the known-good micro-LED and the first pad; and lifting up the conductive pick-up head after the first bonding layer is cooled, leaving the known-good micro-LED on the receiving substrate.

公开(公告)号：EP3218938A1

公开(公告)日：2017-09-20

申请号：EP15901410.9

申请日：2015-08-18

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L25/075 ,  H01L23/00

Abstract: A repairing method, manufacturing method, device and electronic apparatus of micro-LED are disclosed. The method for repairing micro-LED defects comprises: obtaining a micro-LED defect pattern on a receiving substrate; forming micro-LEDs (703b) corresponding to the defect pattern on a laser-transparent repair carrier substrate (707); aligning the micro-LEDs (703b) on the repair carrier substrate (707) with defect positions on the receiving substrate, and bringing the micro-LEDs (703b) into contact with pads at the defect positions; and irradiating the repair carrier substrate with a laser from the repair carrier substrate side, to lift-off the micro-LEDs from the repair carrier substrate (707).

Abstract translation: 公开了一种微型LED的修复方法，制造方法，装置和电子设备。 所述修复微LED缺陷的方法包括：获取接收基板上的微LED缺陷图案; 在激光透明修复载体衬底（707）上形成对应于缺陷图案的微型LED（703b）; 使修复载体基板（707）上的微型LED（703b）与接收基板上的缺陷位置对准，并使微型LED（703b）与缺陷位置处的焊盘接触; 以及用修复载体衬底侧的激光照射修复载体衬底，以从修复载体衬底（707）剥离微型LED。

公开(公告)号：EP3207568A1

公开(公告)日：2017-08-23

申请号：EP15886930.5

申请日：2015-04-01

Applicant: Goertek Inc.

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L25/16

CPC classification number: B81C1/00896 ,  B81C2201/0194 ,  B81C2203/01 ,  B81C2203/0127 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/11312 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/81005 ,  H01L2224/97 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2224/81

Abstract: A transfer method, manufacturing method, device and electronic apparatus of MEMS. The method for MEMS transfer, comprising: depositing a laser-absorbing layer on a first surface of a laser-transparent carrier; forming a MEMS structure on the laser-absorbing layer; attaching the MEMS structure to a receiver; and performing a laser lift-off from the side of the carrier, to remove the carrier. A transfer of high-quality MEMS structure can be achieved in a simple, low cost manner.

Abstract translation: MEMS的传输方法，制造方法，装置和电子设备。 该MEMS传输方法包括：在激光透明载体的第一表面上沉积激光吸收层; 在激光吸收层上形成MEMS结构; 将MEMS结构附接到接收器; 并且从载体侧执行激光剥离以去除载体。 可以以简单，低成本的方式实现高质量MEMS结构的转移。

公开(公告)号：EP3218939B1

公开(公告)日：2019-05-22

申请号：EP15901411.7

申请日：2015-08-18

Applicant: Goertek. Inc

Inventor： ZOU, Quanbo ,  WANG, Zhe

IPC: H01L33/00 ,  H01L27/15