公开(公告)号：GB2497175A

公开(公告)日：2013-06-05

申请号：GB201220379

申请日：2012-11-13

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L51/00 ,  H01L51/05

Abstract: A method for doping a graphene and carbon nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode, comprising; selectively applying a dopant to a metal contact region of a graphene and nanotube field-effect transistor device. Also disclosed are graphene and nanotube thin-film, field effect transistors: where the dopant is disposed on the graphene/nanotube layer 140 and the metal electrodes formed thereafter; and where the graphene/nanotube layer is formed over the metal electrodes and the dopant is selectively applied to the areas above the dopant, respectively. The dopant may be one of cerium ammonium nitrate, cerium ammonium sulphate, ruthenium bipyridyl complex or triethyloxonium hexachloro antimonate. The dopant may be provided in a solution, where the solvent may be one of dichloroethane, alcohol or dichlorobenzene. The dopant may be applied to the transistor by immersing the transistor in the solution for a predetermined time.

公开(公告)号：DE102012220731A1

公开(公告)日：2013-05-29

申请号：DE102012220731

申请日：2012-11-14

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L29/786 ,  B82Y99/00 ,  H01L21/335

Abstract: Ein Verfahren und eine Vorrichtung zum Dotieren einer Graphen-und-Nanoröhrchen-Dünnschichttransistor-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands mit einer Metallelektrode. Das Verfahren weist das selektive Aufbringen eines Dotierstoffs auf einen Metallkontaktbereich einer Graphen-und-Nanoröhrchen-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands der Feldeffekttransistoreinheit auf.

公开(公告)号：DE102012222032B4

公开(公告)日：2019-06-06

申请号：DE102012222032

申请日：2012-12-03

Applicant: IBM

Inventor： AFZALI-ARDANKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE

IPC: C01B32/00 ,  H01L29/78

Abstract: Verfahren zur chemischen Oxidation von Kohlenstoff-Nanoröhrchen (CNT) oder von Graphen, aufweisend das Kombinieren eines Ce(IV)-Salzes, welches in einem Lösungsmittel gelöst ist, das Wasser aufweist, mit einem Kohlenstoffmaterial, das Kohlenstoff-Nanoröhrchen oder Graphen aufweist, wobei das Ce(IV)-Salz ein Ce(IV)-Ammoniumsalz einer Stickstoffsauerstoffsäure ist, wobei das Verfahren für eine Zeitperiode und bei einer Temperatur und Lösungskonzentration durchgeführt wird, die ausreichen, um das Kohlenstoffmaterial im Wesentlichen zu oxidieren, um ein oxidiertes Material herzustellen, welches im Wesentlichen nicht leitend ist, und nach der Oxidation das Ce(IV)-Salz im Wesentlichen von dem oxidierten Material durch Waschen mit deionisierten Wasser (DI Wasser) entfernt wird.

公开(公告)号：GB2498053B

公开(公告)日：2014-09-03

申请号：GB201221174

申请日：2012-11-26

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN ,  AFZALI-ARAKANI ALI

IPC: C01B31/02

Abstract: A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

公开(公告)号：GB2506315A

公开(公告)日：2014-03-26

申请号：GB201400139

申请日：2012-06-05

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  HONG AUGUSTIN J ,  KIM JEEHWAN ,  SADANA DEVENDRA K ,  TULEVSKI GEORGE

IPC: H01L31/0224 ,  B82Y30/00 ,  H01L31/075

Abstract: A photovoltaic device and method include a photovoltaic stack having an N-doped layer (112), a P-doped layer (108) and an intrinsic layer (1 10). A transparent electrode (104) is formed on the photovoltaic stack and includes a carbon based layer (105) and a high work function metal layer (107). The high work function metal layer is disposed at an interface between the carbon based layer and the P-doped layer such that the high work function metal layer forms a reduced barrier contact and is light transmissive.

公开(公告)号：GB2498054B

公开(公告)日：2014-03-12

申请号：GB201221175

申请日：2012-11-26

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN

IPC: C01B31/02

Abstract: A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.

公开(公告)号：DE102012222023B4

公开(公告)日：2019-06-27

申请号：DE102012222023

申请日：2012-12-03

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE S

IPC: C01B32/00 ,  B82B3/00 ,  B82Y40/00 ,  H01J1/304

Abstract: Verfahren zum Dotieren eines Kohlenstoffmaterials, das eine Dünnschicht aus Kohlenstoffnanoröhrchen (CNT) oder Graphen auf einem Substrat aufweist, umfassend:- Eintauchen des Kohlenstoffmaterials in eine wässrige Lösung aus Cer(IV)-Salz, wobei das Cer(IV)-Salz aus einem Cer(IV)-Salz einer Niederalkyl-Organo-Schwefelsäure oder einem Cer(IV)-Salz einer substituierten Niederalkan-Organo-Schwefelsäure gewählt wird,- nach einer vorgegebenen Zeitperiode Entnehmen des Substrats aus der Lösung, Spülen mit Wasser zum Entfernen von überschüssigem Cer(IV)-Salz und- Trocknen zum Erzeugen des dotierten Kohlenstoffmaterials auf dem Substrat.

公开(公告)号：GB2506315B

公开(公告)日：2015-02-25

申请号：GB201400139

申请日：2012-06-05

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  HONG AUGUSTIN J ,  KIM JEEHWAN ,  SADANA DEVENDRA K ,  TULEVSKI GEORGE S

IPC: H01L31/0224 ,  B82Y30/00 ,  H01L31/075

Abstract: A photovoltaic device and method include a photovoltaic stack having an N-doped layer, a P-doped layer and an intrinsic layer. A transparent electrode is formed on the photovoltaic stack and includes a carbon based layer and a high work function metal layer. The high work function metal layer is disposed at an interface between the carbon based layer and the P-doped layer such that the high work function metal layer forms a reduced barrier contact and is light transmissive.

公开(公告)号：GB2497175B

公开(公告)日：2014-06-11

申请号：GB201220379

申请日：2012-11-13

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L51/00 ,  H01L51/05

Abstract: A method and an apparatus for doping at least one of a graphene and a nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of at least one of a graphene and a nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device.

公开(公告)号：GB2497176B

公开(公告)日：2014-01-15

申请号：GB201220382

申请日：2012-11-13

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN

IPC: H01L51/00 ,  H01L51/05