公开(公告)号：EP2760785A4

公开(公告)日：2015-04-15

申请号：EP12836212

申请日：2012-08-30

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  PARK HONGSIK

IPC: C01B31/02 ,  B82Y10/00 ,  B82Y40/00 ,  C07D213/76 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05

CPC classification number: C07D213/79 ,  B82Y10/00 ,  B82Y40/00 ,  C07D213/76 ,  H01L29/0676 ,  H01L51/0003 ,  H01L51/0048 ,  H01L51/0049 ,  H01L51/0558

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi-functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi-functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

公开(公告)号：DE102012220731B4

公开(公告)日：2017-04-13

申请号：DE102012220731

申请日：2012-11-14

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN ,  XIA FENGNIAN

IPC: H01L29/786 ,  B82Y10/00 ,  H01L21/28 ,  H01L21/335 ,  H01L29/16

Abstract: Verfahren zum Dotieren einer Graphen- oder Kohlenstoff-Nanoröhrchen-Dünnschichttransistor-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands mit einer Metallelektrode, aufweisend: selektives Aufbringen eines Dotierstoffs aus Cer(IV)-Salz auf einen Metallkontaktbereich der Graphen- oder Kohlenstoff-Nanoröhrchen-Dünnschichttransistor-Feldeffekttransistoreinheit zum Verringern des Kontaktwiderstands an der Metall-CNT/Graphen-Grenzfläche.

公开(公告)号：CA2847579A1

公开(公告)日：2013-04-04

申请号：CA2847579

申请日：2012-08-30

Applicant: IBM

Inventor： AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN ,  PARK HONGSIK

IPC: C01B31/02

Abstract: A method of forming a structure having selectively placed carbon nanotubes, a method of making charged carbon nanotubes, a bi- functional precursor, and a structure having a high density carbon nanotube layer with minimal bundling. Carbon nanotubes are selectively placed on a substrate having two regions. The first region has an isoelectric point exceeding the second region's isoelectric point. The substrate is immersed in a solution of a bi- functional precursor having anchoring and charged ends. The anchoring end bonds to the first region to form a self-assembled monolayer having a charged end. The substrate with charged monolayer is immersed in a solution of carbon nanotubes having an opposite charge to form a carbon nanotube layer on the self-assembled monolayer. The charged carbon nanotubes are made by functionalization or coating with an ionic surfactant.

公开(公告)号：GB2498053B

公开(公告)日：2014-09-03

申请号：GB201221174

申请日：2012-11-26

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN ,  AFZALI-ARAKANI ALI

IPC: C01B31/02

Abstract: A process comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo sulfur acid, or Ce (IV) salt of a lower alkane organo sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkyllsulfonate, or Ce (IV) trifluoro lower alkanesulfonate. A product is produced by this process. An article of manufacture comprises this product on a substrate.

公开(公告)号：GB2498054B

公开(公告)日：2014-03-12

申请号：GB201221175

申请日：2012-11-26

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN

IPC: C01B31/02

Abstract: A process comprises combining a Ce (IV) salt with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid and is dissolved in a solvent comprising water. The process is conducted under conditions to substantially oxidize the carbon material to produce an oxidized material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidized material. This produces a product made by the process. An article of manufacture comprises the product on a substrate. The oxidized material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidized material patterning non-conductive areas separate from conductive areas of the non-oxidized carbon material, where the conductive areas are operatively associated with the device.

公开(公告)号：DE112011102747T5

公开(公告)日：2013-07-11

申请号：DE112011102747

申请日：2011-06-07

Applicant: IBM

Inventor： AFZALI-AR-DAKANI ALI ,  BOL AGEETH ANKE ,  TULEVSKI GEORGE STOJAN

IPC: H01B1/04 ,  C01B31/04 ,  H01L51/00 ,  H01L51/44

Abstract: Es werden Techniken zum Erhöhen der Leitfähigkeit von Graphendünnschichten durch chemisches Dotieren bereitgestellt. Gemäß einem Aspekt beinhaltet ein Verfahren zum Erhöhen der Leitfähigkeit einer Graphendünnschicht die folgenden Schritte. Die Graphendünnschicht wird aus einer oder mehreren Graphenlagen gebildet. Die Graphenlagen werden mit einer Lösung eines Einelektronen-Oxidationsmittels behandelt, das zum Dotieren der Graphenlagen dient, um deren Leitfähigkeit und dadurch die Gesamtleitfähigkeit der Dünnschicht zu erhöhen. Die Graphendünnschicht kann gebildet werden, bevor die Graphenlagen mit der Lösung des Einelektronen-Oxidationsmittels behandelt werden. Alternativ können die Graphenlagen mit der Lösung des Einelektronen-Oxidationsmittels behandelt werden, bevor die Graphendünnschicht gebildet wird. Es wird auch ein Verfahren zum Herstellen einer transparenten Elektrode aus einer Graphendünnschicht auf einer Fotovoltaikeinheit bereitgestellt.

公开(公告)号：GB2510058B

公开(公告)日：2015-11-25

申请号：GB201322674

申请日：2012-05-07

Applicant: IBM

Inventor： CHEN ZHIHONG ,  FRANKLIN AARON D ,  HAN SHU-JEN ,  HANNON JAMES BOWLER ,  SAENGER KATHERINE L ,  TULEVSKI GEORGE STOJAN

IPC: H01L29/423 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/16 ,  H01L29/49 ,  H01L29/786 ,  H01L51/00

Abstract: Transistor devices having nanoscale material-based channels (e.g., carbon nanotube or graphene channels) and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; an insulator on the substrate; a local bottom gate embedded in the insulator, wherein a top surface of the gate is substantially coplanar with a surface of the insulator; a local gate dielectric on the bottom gate; a carbon-based nanostructure material over at least a portion of the local gate dielectric, wherein a portion of the carbon-based nanostructure material serves as a channel of the device; and conductive source and drain contacts to one or more portions of the carbon-based nanostructure material on opposing sides of the channel that serve as source and drain regions of the device.

公开(公告)号：GB2496956B

公开(公告)日：2013-12-11

申请号：GB201219636

申请日：2012-11-01

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  MAAROUF AHMED ,  KASRY AMAL ,  MARTYNA GLENN JOHN ,  TULEVSKI GEORGE STOJAN ,  BOL AGEETH ANKE

IPC: H01B1/04 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L31/0224 ,  H01L33/42 ,  H01L51/00 ,  H01L51/05

公开(公告)号：GB2498054A

公开(公告)日：2013-07-03

申请号：GB201221175

申请日：2012-11-26

Applicant: IBM

Inventor： CHANDRA BHUPESH ,  AFZALI-ARDAKANI ALI ,  TULEVSKI GEORGE STOJAN

IPC: C01B31/02

Abstract: A process is disclosed which comprises combining a Ce (IV) salt with a carbon material comprising carbon nanotubes or graphene wherein the Ce (IV) and is dissolved in a solvent comprising water. The process is conducted for a period of time and at a temperature and solution concentration sufficient to substantially oxidise the carbon material to produce an oxidised material that is substantially non-conducting. After the oxidation, the Ce (IV) is substantially removed from the oxidised material. An article of manufacture comprises the product on a substrate. The oxidised material can be formed as a pattern on the substrate. In another embodiment the substrate comprises an electronic device with the oxidised material patterning non-conductive areas separate from conductive areas of the non-oxidised carbon material, where the conductive areas are operatively associated with the device.

公开(公告)号：GB2498053A

公开(公告)日：2013-07-03

申请号：GB201221174

申请日：2012-11-26

Applicant: IBM

Inventor： AFZALI-ARAKANI ALI ,  CHANDRA BHUPESH ,  TULEVSKI GEORGE STOJAN

IPC: C01B31/02

Abstract: A process for doping carbon materials is disclosed which comprises combining a Ce (IV) salt dissolved in a solvent comprising water with a carbon material comprising CNT or graphene wherein the Ce (IV) salt is selected from a Ce (IV) ammonium salt of a nitrogen oxide acid, Ce (IV) ammonium salt of a sulfur oxide acid, Ce (IV) salt of a lower alkyl organo-sulfur acid, or Ce (IV) salt of a substituted lower alkane organo-sulfur acid. In one embodiment the Ce (IV) salt is selected from Ce (IV) ammonium nitrate, Ce (IV) ammonium sulfate, Ce (IV) lower alkylsulfonate, or Ce (IV) trihalo lower alkanesulfonate.