公开(公告)号：DE3687409T2

公开(公告)日：1993-07-15

申请号：DE3687409

申请日：1986-10-21

Applicant: IBM

Inventor： CHOW MING-FEA ,  GUTHRIE WILLIAM LISLIE ,  KAUFMAN FRANK B

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  H01L21/90

Abstract: The present invention discloses a method of forming fine conductive lines, patterns, and connectors, in particular for electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric mate­rial is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric mate­rial, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric mate­rial becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

公开(公告)号：DE3585436D1

公开(公告)日：1992-04-02

申请号：DE3585436

申请日：1985-12-03

Applicant: IBM

Inventor： CHIONG KAOLIN ,  CHOW MING-FEA ,  YANG JER-MING

IPC: G03F7/36 ,  G03C1/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/40

公开(公告)号：DE3471404D1

公开(公告)日：1988-06-23

申请号：DE3471404

申请日：1984-06-28

Applicant: IBM

Inventor： CHOW MING-FEA ,  LOPATA ALEXANDER DANIEL ,  LYONS CHRISTOPHER FRANCIS ,  MCINTOSH ROBERT CHARLES ,  SCADUTO ANTHONY FRANCIS

IPC: H01L21/30 ,  G03C5/08 ,  G03F7/105 ,  G03F7/20 ,  H01L21/312 ,  G03F7/26 ,  G03F7/08 ,  G03C5/18 ,  G03B41/00

Abstract: A process for setting the exposure speed of photolithography instruments is described, using a method of dosimetry based on photoactive compound bleaching of photoresist. A curve of light absorbance to exposure speed and a calibration curve of light absorbance to dose are determined for a photoresist. The exposure speed for any desired degree of resist bleaching can be set using the first curve, and the exposure speed for a predetermined dosage can be set by determining the common light absorbance value on the exposure speed and dosage curves.