公开(公告)号：MX167380B

公开(公告)日：1993-03-19

申请号：MX1222988

申请日：1988-07-12

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C01B21/06 ,  C01B21/064 ,  C01B21/072 ,  C01B25/08 ,  C01B35/04 ,  C07F7/02 ,  C07F7/08 ,  C07F7/10 ,  C07F9/02 ,  C07F9/68 ,  C07F9/90 ,  C22C1/00 ,  C22C28/00 ,  C22C21/00

公开(公告)号：AU607236B2

公开(公告)日：1991-02-28

申请号：AU1893288

申请日：1988-07-11

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C01B21/06 ,  C01B21/064 ,  C01B21/072 ,  C01B25/08 ,  C01B35/04 ,  C07F7/02 ,  C07F7/08 ,  C07F7/10 ,  C07F9/02 ,  C07F9/68 ,  C07F9/90 ,  C22C1/00 ,  C01B35/02 ,  C01B35/14 ,  C01F7/00 ,  C01G28/00 ,  C01G30/00

公开(公告)号：AU583709B2

公开(公告)日：1989-05-04

申请号：AU6929087

申请日：1987-02-26

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C03C3/085 ,  C03B8/02 ,  C03B19/12 ,  C03B20/00 ,  C03C3/091 ,  C03C3/097 ,  C03C10/00 ,  C03C10/08 ,  C04B35/195 ,  C04B35/626 ,  C04B35/18 ,  C04B35/20

公开(公告)号：DE69024263T2

公开(公告)日：1996-07-11

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：ES2080818T3

公开(公告)日：1996-02-16

申请号：ES90480031

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：DK0455574T3

公开(公告)日：1995-10-16

申请号：DK91480057

申请日：1991-03-29

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C23F1/26 ,  C23F1/14 ,  C23F1/38 ,  C23F1/46

公开(公告)号：DE3780573T2

公开(公告)日：1993-03-04

申请号：DE3780573

申请日：1987-10-13

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL ,  ANDERSON RONALD MAURICE

IPC: C01G25/02

公开(公告)号：DE3781428D1

公开(公告)日：1992-10-08

申请号：DE3781428

申请日：1987-02-11

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C03C3/085 ,  C03B8/02 ,  C03B19/12 ,  C03B20/00 ,  C03C3/091 ,  C03C3/097 ,  C03C10/00 ,  C03C10/08 ,  C04B35/195 ,  C04B35/626

Abstract: A glassy amorphous compsn. comprising silica and one other component is obtd. from an aq. or organic soln. of a precursor of the other component, by addn. of a silane. A reagent which hydrolyses the silane is then added and reaction effected to bring about polymerisation. The solvent is removed by spray drying, and the residue pyrolysed. The soln. may be aq., and the precursor an alkoxide of Mg or B. In a modification an amorphous cordierite-forming glass is produced from a soln. contg. at least two precursors to which a silane is added and hydrolysed. The precursors may be beta-diketonates or Mg and/or Al.

公开(公告)号：DE3776860D1

公开(公告)日：1992-04-02

申请号：DE3776860

申请日：1987-09-22

Applicant: IBM

Inventor： DAVID LAWRENCE DANIEL

IPC: C01B25/26 ,  C01B25/36 ,  C01B25/37 ,  B01J14/00

公开(公告)号：BR9001091A

公开(公告)日：1991-03-05

申请号：BR9001091

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.