公开(公告)号：JPH10255235A

公开(公告)日：1998-09-25

申请号：JP31309497

申请日：1997-11-14

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DOVEK MORIS MUSA ,  KROUNBI MOHAMAD TOWFIK

IPC: G11B5/255 ,  G11B5/39 ,  G11B5/60

Abstract: PROBLEM TO BE SOLVED: To provide a magneto-resistive(MR) reading/inductive writing magnetic head assembly which is formed on a hard electrically insulated substrate to have static electricity discharging(ESD) protection property. SOLUTION: An MR head assembly 50 is preferentially composed of a hard electrically insulated substrate 52 formed of sapphire or alumina TiC, a plurality of alumina layers 54 formed on the substrate, a magneto-resistance reading/ induction writing head 56 arranged between the alumina layers, a silicon layer 58 supported by the substrate and a semiconductor circuit 60 which is built into the silicon layer to provide the static electricity discharging protection property for the head and is connected with the magneto-resistive reading/ inductive writing head. The silicon layer is epitaxially grown on the substrate when it is the sapphire substrate and joined to the substrate when it is the alumina TiC substrate. With the hard electrically insulated substrate and alumina layer, the assembly is provided with a hard air bearing surface 62 having almost uniform overlapping area and etching characteristic and excellent durability.

公开(公告)号：DE69024263D1

公开(公告)日：1996-02-01

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：SG66404A1

公开(公告)日：1999-07-20

申请号：SG1997003837

申请日：1997-10-22

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DOVEK MORIS MUSA ,  KROUNBI MOHAMAD TOWFIK

IPC: G11B5/255 ,  G11B5/39 ,  G11B5/60 ,  G11B5/40 ,  G11B5/127

公开(公告)号：DE69024263T2

公开(公告)日：1996-07-11

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：ES2080818T3

公开(公告)日：1996-02-16

申请号：ES90480031

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：BR9001091A

公开(公告)日：1991-03-05

申请号：BR9001091

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.