公开(公告)号：JP2004190129A

公开(公告)日：2004-07-08

申请号：JP2003389992

申请日：2003-11-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG TIEN-JEN ,  FOWLER TODD ,  GIRI AJAY ,  NENADIC ANTON ,  SAMUEL BLESSEN ,  WONG KEITH KWONG HON

IPC: C25D7/12 ,  C25D5/00 ,  C25D5/02 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12 ,  H01L21/288 ,  H05K3/24

CPC classification number: H01L21/2885 ,  C25D5/02 ,  C25D17/001 ,  C25D17/007 ,  C25D17/10 ,  C25D17/12 ,  H05K3/241

Abstract: PROBLEM TO BE SOLVED: To provide a method for improving the electroplating on a substrate to be plated having a feature different in density, and a device therefor. SOLUTION: The method includes a step of preparing a plating bath having an anode and a step of immersing the substrate constituting a cathode in the plating bath separately from the anode. A second cathode including a screening part having an opening of different sizes coincident with a metal feature is arranged in such a state adjacent to the surface of the substrate and separated from the surface of the substrate between the substrate and the anode in the plating bath. The screening part has a larger size opening adjacent to a high density feature area to be plated and a smaller size opening adjacent to a low density feature area to be plated. The method includes a step of applying a voltage between the substrate and the anode and between the second cathode and the anode to allow an electric current to flow to the plating bath and a step of electroplating the metal feature different in density on the substrate. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：DE69024263D1

公开(公告)日：1996-02-01

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：DE69024263T2

公开(公告)日：1996-07-11

申请号：DE69024263

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：ES2080818T3

公开(公告)日：1996-02-16

申请号：ES90480031

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：BR9001091A

公开(公告)日：1991-03-05

申请号：BR9001091

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.