公开(公告)号：JPH11340463A

公开(公告)日：1999-12-10

申请号：JP12414599

申请日：1999-04-30

Applicant: IBM

Inventor： JOSHI RAJIV V

IPC: C23C16/04 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/43 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To convert silicon of desired thickness into high melting point metal by exposing silicon deposited selectively to hexafluoro metal gas and regulating the gas flow rate and one or a plurality of CVD process parameters. SOLUTION: For example, a blanket layer 36 of insulating material is deposited to cover a substrate entirely. The blanket layer 36 is then etched selectively to leave a side wall spacer 38 on the opposite sides of silicon layers 32, 34 on a source region 14 and a drain region 16 and an insulating top wall 30 is removed. Subsequently, it is exposed to gas high melting point metal hexafluoridein in the same environment as CVD, thus converting a gate silicon layer 26, the source silicon layer 32 and the drain silicon layer 34 to a high melting point metal. In this regard, gas flow rate and CVD process parameters are regulated such that silicon of desired thickness is converted into high melting point metal.

公开(公告)号：JPH10150006A

公开(公告)日：1998-06-02

申请号：JP28184097

申请日：1997-10-15

Applicant: IBM

Inventor： JOSHI RAJIV V

IPC: C23C16/04 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/43 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To accumulate a high melting point metal layer by using only silicon reduction of hexafluoride of the high melting point metal by adjusting a flow of a hexafluoride metal gas and one or a plurality of CVD process parameters. SOLUTION: A blanket layer is selectively etched and side wall spacers 38 are left on both sides of silicon layers 32 and 34 on a source area 14 and a drain area 16. Then, a gate silicon layer 26, a source silicon layer 32 and a drain silicon layer 34 are converted into high melting point metal by exposing them to hexafluoride gas of a high melting point metal in the same environment as for chemical vapor deposition. The gate silicon layer 26, the source silicon layer 32 and the drain silicon layer 34 are completely converted into tungsten. Thus, silicon of any desired thickness can be converted into tungsten.

公开(公告)号：DE69329663T2

公开(公告)日：2001-05-03

申请号：DE69329663

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：BR9304315A

公开(公告)日：1994-05-31

申请号：BR9304315

申请日：1993-10-21

Applicant: IBM

Inventor： BUTI TAQI N ,  HSU LOUIS ,  JOSHI RAJIV V ,  SHEPARD JOSEPH F

IPC: H01L21/3205 ,  H01L21/74 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/98 ,  H01L23/522 ,  H01L27/04 ,  H01L21/90 ,  H01L21/283

Abstract: A wafer structure (10) suitable for the formation of semiconductor devices thereon and having a buried interconnect structure for interconnection of desired ones of the semiconductor devices according to a predetermined interconnection pattern and a method of making the same is disclosed. The wafer structure comprises a primary substrate (20) having a first thickness appropriate for the formation of the desired semiconductor devices. The primary substrate further comprises a) conductive interconnection pads (24) of a second thickness formed on a bottom surface of the primary substrate according to the predetermined interconnection pattern, b) first isolation pads (22) of a third thickness formed on the bottom surface of the primary substrate between the conductive interconnection pads, and c) interconnection pad caps (28) of a fourth thickness formed upon the surface of the interconnection pads opposite from the primary substrate, wherein the interconnection pad caps comprise a material suitable for wafer bonding, and further wherein the total thickness of the second thickness and the fourth thickness equals the third thickness. The structure further comprises a secondary substrate (30) having an oxide layer (32) thereon bonded to the interconnection pad caps and the first isolation pads of the primary wafer.

公开(公告)号：DE69332917T2

公开(公告)日：2003-12-24

申请号：DE69332917

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  C23C14/04

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：GB2342819A

公开(公告)日：2000-04-19

申请号：GB9918812

申请日：1999-08-11

Applicant: IBM

Inventor： JOSHI RAJIV V ,  JOSHI SUCHITRA R

IPC: H04N7/173

Abstract: An interactive television system both sends and receives data via a wireless communication link between first and second communication units. The first communication unit, which may take the form of a set top box, receives and generates signals including, messages, e-mail, graphics, video and audio for display on a television set. A keyboard may be associated with the first communication unit to allow information to be entered and modified. A second communication unit transmits data stored on an associated server in response to requests received from the first communication unit. The wireless communication link may be via a satellite.

公开(公告)号：SG44450A1

公开(公告)日：1997-12-19

申请号：SG1996000500

申请日：1993-02-01

Applicant: IBM

Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR DALAL M ,  HSU LOUIS L

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60

Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

公开(公告)号：ES2058354T3

公开(公告)日：1994-11-01

申请号：ES89101923

申请日：1989-02-03

Applicant: IBM

Inventor： JOSHI RAJIV V

IPC: C23C16/04 ,  C23C16/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L29/43 ,  H01L29/78 ,  H01L21/90 ,  H01L29/76

公开(公告)号：GB2342819B

公开(公告)日：2003-07-16

申请号：GB9918812

申请日：1999-08-11

Applicant: IBM

Inventor： JOSHI RAJIV V ,  JOSHI SUCHITRA R

IPC: H04N7/173

Abstract: A system and method for controlling an interactive media system includes generating, by a first communication system, an information signal and a display signal for display by an electronic medium, transferring the information signal by a wireless signal transfer network, receiving and processing the information signal by a server, providing, by the server, data included in the information signal to a functional network, wherein the server retrieves return data from the functional network and provides the return data to a second communication system, generating, by the second communication system, a return information signal and providing the return information signal to the wireless signal transfer network, and transferring, by the wireless signal transfer network, the return information signal to the first communication system, which generates the display signal for display on the electronic medium.

公开(公告)号：CA2324755A1

公开(公告)日：2001-06-01

申请号：CA2324755

申请日：2000-10-30

Applicant: IBM

Inventor： JOSHI RAJIV V ,  JOSHI SUCHITRA R

IPC: G06F17/60 ,  G06F17/30 ,  H04L12/16