公开(公告)号：DE10011054A1

公开(公告)日：2000-09-21

申请号：DE10011054

申请日：2000-03-07

Applicant: IBM

Inventor： CHU JACK OON ,  HAMMOND RICHARD ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  MOONEY PATRICIA MAY ,  OTT JOHN A

IPC: H01L29/161 ,  H01L21/338 ,  H01L29/10 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L21/335

Abstract: Layer structure arrangement comprises a single crystalline substrate, a first layer of relaxed Si1-xGex (where x = 0.35-0.5), a second layer of Si1-x, a third layer of non-doped silicon, a forth layer of non-doped Si1-x, a fifth layer of germanium, a sixth layer of Si1-wGew (where w = 0.5 to less than 1.0), and a seventh layer of Si1-xGex.

公开(公告)号：DE69941588D1

公开(公告)日：2009-12-10

申请号：DE69941588

申请日：1999-02-18

Applicant: IBM

Inventor： CHU JACK OON ,  ISMAIL KHALID EZZELDIN ,  KOESTER STEVEN JOHN ,  KLEPSER BERND-ULRICH H

IPC: H01L27/144 ,  H01L31/10 ,  H01L31/0312 ,  H01L31/0352

Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.