公开(公告)号：DE69411493T2

公开(公告)日：1999-03-04

申请号：DE69411493

申请日：1994-09-23

Applicant: IBM

Inventor： BEHFAR-RAD ABBAS ,  MEIER HEINZ PETER ,  HARDER CHRISTOPH STEPHEN

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/20 ,  H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S3/085 ,  H01S3/19

Abstract: Making a semiconductor laser having at least a quantum well structure including layers deposited on a semiconductor substrate comprises: (a) forming one the substrate a set of laser layers of a base chemical compsn. and including at least a substitutional element, the laser layers including at least a lower cladding layer having a first concn. value of the substitutional element and a lower graded layer having a chemical compsn. varying from a second concn. value of the substitutional element a% a lower interface of the lower graded layer to a third concn. value of the substitutional element at an upper interface of the lower graded layer; (b) forming an upper graded layer on the quantum well layer; (c) forming an upper graded layer on the quantum well layer of a chemical compsn. having a concn. value of the substitutional element varying from a fifth concn. value at a lower interface of the upper graded layer with the quantum well layer to a sixth concn. value at an upper interface of the upper graded layer; (d) depositing an upper cladding layer of a seventh concn. value of the substitutional element above the upper graded layer and a contact layer of an eighth concn. value above the upper cladding layer; (e) sepg. a laser structure including an active area from a remainder portion of the substrate, thereby forming the semiconductor laser.

公开(公告)号：DE68925810D1

公开(公告)日：1996-04-04

申请号：DE68925810

申请日：1989-12-18

Applicant: IBM

Inventor： HARDER CHRISTOPH STEPHAN ,  LENTH WILFRIED ,  MEIER HEINZ PETER ,  RISK WILLIAM PAUL

IPC: G02F1/35 ,  G02F1/355 ,  G02F1/361 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/40 ,  H01S3/133

Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.

公开(公告)号：MX169915B

公开(公告)日：1993-07-30

申请号：MX1658489

申请日：1989-06-23

Applicant: IBM

Inventor： MEIER HEINZ PETER ,  GIESON EDWARD A VAN ,  WALTER WILLI

IPC: H01L21/203 ,  H01L33/00 ,  H01S5/00 ,  H01S5/223 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19 ,  C30B29/28

公开(公告)号：BR9000115A

公开(公告)日：1990-10-23

申请号：BR9000115

申请日：1990-01-12

Applicant: IBM

Inventor： HARDER CHRISTOPH STEPHAN ,  LENTH WILFRIED ,  MEIER HEINZ PETER ,  RISK WILLIAM PAUL

IPC: G02F1/35 ,  G02F1/355 ,  G02F1/361 ,  G02F1/37 ,  H01S3/109 ,  H01S5/00 ,  H01S5/0687 ,  H01S5/40 ,  H01S3/00

Abstract: Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser (10), such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam (12), and a nonlinear crystal (19) of KTP (KTiOPO4) produces coherent radiation (22) by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator (18) and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers (10,11) are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a and c axes parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.