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    Magnetoresistive sensor
    11.
    发明专利
    Magnetoresistive sensor 未知

    公开(公告)号：SG42305A1

    公开(公告)日：1997-08-15

    申请号：SG1996000086

    申请日：1991-12-09

    Applicant: IBM

    Inventor： DIENY BERNARD ,  GURNEY BRUCE ALVIN ,  LAMBERT STEVEN EUGENE ,  MAURI DANIELE ,  PARKIN STUART STEPHEN PAPWORTH ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

    IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G01R33/02 ,  H01L43/08

    Abstract: A magnetoresistive (MR) sensor is disclosed which comprises a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

    14.
    发明专利
    未知

    公开(公告)号：BR8801120A

    公开(公告)日：1988-10-18

    申请号：BR8801120

    申请日：1988-03-11

    Applicant: IBM

    Inventor： BEYERS ROBERT BRUCE ,  ENGLER EDWARD MARTIN ,  GRANT PAUL MICHAEL ,  LIM GRACE SU ,  PARKIN STUART STEPHEN PAPWORTH

    IPC: C01G1/00 ,  C01G3/00 ,  C04B35/00 ,  C04B35/45 ,  H01B12/00 ,  H01B13/00 ,  H01L39/12 ,  H01L39/24

    Abstract: Compositions having the formula A1+/-xM2+/-xCu3Oy, wherein A is Y, or a combination of Y La, Lu, Sc or Yb; M is Ba, or a combination of Ba, Sr or Ca and y is sufficient to satisfy the valence demands, have been found to be bulk electrical superconductors at a temperature above 77K. The compositions are single phase perovskite-like crystalline structures. They are made by a process involving intimately mixing the metal oxides or their precursors in the proper molar ratios, heating the mixture in the presence of oxygen to a temperature between about 800 DEG C and about 1100 DEG C and slowly cooling the mixture to room temperature in the presence of oxygen over a period of at least four hours.

    Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide
    15.
    发明专利
    Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide 未知

    公开(公告)号：SG67573A1

    公开(公告)日：1999-09-21

    申请号：SG1998004207

    申请日：1998-10-14

    Applicant: IBM

    Inventor： FONTANA ROBERT EDWARD JR ,  PARKIN STUART STEPHEN PAPWORTH ,  TSANG CHING HWA

    IPC: G11B5/39 ,  G11B5/40 ,  G11B5/33

    Abstract: A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ sensing or free ferromagnetic layer also functioning as a flux guide to direct magnetic flux from the magnetic recording medium to the tunnel junction. The MTJ fixed ferromagnetic layer has its front edge recessed from the sensing surface of the head. Both the fixed and free ferromagnetic layers are in contact with opposite surfaces of the MTJ tunnel barrier layer but the free ferromagnetic layer extends beyond the back edge of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface. This assures that the magnetic flux is non-zero in the tunnel junction region. The magnetization direction of the fixed ferromagnetic layer is fixed in a direction generally perpendicular to the sensing surface and thus to the magnetic recording medium, preferably by interfacial exchange coupling with an antiferromagnetic layer. The magnetization direction of the free ferromagnetic layer is aligned in a direction generally parallel to the surface of the medium in the absence of an applied magnetic field and is free to rotate in the presence of applied magnetic fields from the medium. A layer of high coercivity hard magnetic material adjacent the sides of the free ferromagnetic layer longitudinally biases the magnetization of the free ferromagnetic layer in the preferred direction.

    SYSTEM AND METHOD FOR TRANSFERRING DATA TO AND FROM A MAGNETIC SHIFT REGISTER WITH A SHIFTABLE DATA COLUMN
    19.
    发明专利
    SYSTEM AND METHOD FOR TRANSFERRING DATA TO AND FROM A MAGNETIC SHIFT REGISTER WITH A SHIFTABLE DATA COLUMN 未知

    公开(公告)号：MY139843A

    公开(公告)日：2009-10-30

    申请号：MYPI20055657

    申请日：2005-12-02

    Applicant: IBM

    Inventor： PARKIN STUART STEPHEN PAPWORTH

    Abstract: A MAGNETIC SHIFT REGISTER UTILIZES A DATA COLUMN COMPRISING A THIN WIRE OF MAGNETIC MATERIAL. A WRITING ELEMENT SELECTIVELY CHANGES THE DIRECTION OF THE MAGNETIC MOMENT IN THE MAGNETIC DOMAINS TO WRITE THE DATA TO THE DATA COLUMN. ASSOCIATED WITH EACH DOMAIN WALL ARE LARGE MAGNETIC FRINGING FIELDS CONCENTRATED IN A VERY SMALL SPACE. THESE MAGNETIC FRINGING FIELDS WRITE TO AND READ FROM THE MAGNETIC SHIFT REGISTER. WHEN THE DOMAIN WALL IS MOVED CLOSE TO ANOTHER MAGNETIC MATERIAL, THE FRINGING FIELDS CHANGE THE DIRECTION OF THE MAGNETIC MOMENT IN THE MAGNETIC MATERIAL, EFFECTIVELY "WRITING" TO THE MAGNETIC MATERIAL. A READING ELEMENT SIMILAR TO A TUNNELING JUNCTION COMPRISES A FREE LAYER AND A PINNED LAYER OF MAGNETIC MATERIAL. FRINGING FIELDS CHANGE THE DIRECTION OF THE MAGNETIC MOMENT IN THE FREE LAYER WITH RESPECT TO THE PINNED LAYER, CHANGING ELECTRICAL RESISTANCE OF THE READING ELEMENT AND "READING" DATA STORED IN THE MAGNETIC SHIFT REGISTER.

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