公开(公告)号：BR9001091A

公开(公告)日：1991-03-05

申请号：BR9001091

申请日：1990-03-07

Applicant: IBM

Inventor： CARR JEFFREY WILLIAM ,  DAVID LAWRENCE DANIEL ,  GUTHRIE WILLIAM LESLIE ,  KAUFMAN FRANK BENJAMIN ,  PATRICK WILLIAM JOHN ,  RODBELL KENNETH PARKER ,  PASCO ROBERT WILLIAM ,  NENADIC ANTON

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48 ,  H01L21/302

Abstract: Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

公开(公告)号：DE2639707A1

公开(公告)日：1977-04-28

申请号：DE2639707

申请日：1976-09-03

Applicant: IBM

Inventor： PATRICK WILLIAM JOHN ,  WESTDORF WOLFGANG ALFRED

IPC: C01B33/02 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208 ,  B01J17/18