公开(公告)号：DE69417772T2

公开(公告)日：1999-12-02

申请号：DE69417772

申请日：1994-08-27

Applicant: IBM

Inventor： BINNIG GERD ,  HAEBERLE WALTER ,  ROHRER HEINRICH ,  SMITH DOUGLAS

IPC: G01B7/34 ,  G01B21/30 ,  G01Q10/04 ,  G05D3/00 ,  G11B5/55 ,  G11B9/00 ,  G11B21/02 ,  H02K33/18 ,  H02K41/035 ,  G01N27/00 ,  H02K57/00

Abstract: PCT No. PCT/EP94/02844 Sec. 371 Date Feb. 26, 1997 Sec. 102(e) Date Feb. 26, 1997 PCT Filed Aug. 27, 1994 PCT Pub. No. WO96/07074 PCT Pub. Date Mar. 7, 1996A fine-positioning apparatus for a scanning probe microscope includes magnetic solenoid actuators for each of the x, y and z scanning axes of the microscope. The sample is mounted on the coil of one of the actuators for movement of the sample in the z direction while the tunnelling probe is attached to two other solenoid actuators for movement of the probe in the x and y directions.

公开(公告)号：CA1308574C

公开(公告)日：1992-10-13

申请号：CA565614

申请日：1988-04-29

Applicant: IBM

Inventor： BINNIG GERD K ,  DUERIG URS T ,  POHL WOLFGANG D ,  ROHRER HEINRICH ,  GIMZEWSKI JAMES K

IPC: G01B7/34 ,  G01B11/30 ,  G01B21/30 ,  G01D5/26 ,  G01L1/08 ,  G01N23/00 ,  G01N37/00 ,  G01Q20/02 ,  G01Q60/38 ,  G01R33/038 ,  G11B9/00 ,  G11B9/14 ,  G11B11/00 ,  G11B11/10 ,  G11B17/32 ,  G01L1/14

Abstract: SZ 9-86-004 The atomic force sensor head comprises a cantilever beam (50) forming an integral part of a body (53) from which it extends such that it has a free end to carry a member (55) for interaction with a surface to be investigated. As said member (55) is brought close to said surface, atomic forces will cause a deflection of said cantilever (50). This deflection is translated into a variation of an electrical value, such as a capacitance. A capacitor (57) is formed by a pairof electrodes (51, 52) coated onto the cantilever beam (50) and said body (53), respectively. The deflection of said cantilever beam (50) causes a variation of the distance (s) between said electrodes (51, 52) and, hence, of the capacitance. An improvement of the sensitivity and stability of this arrangement is made possible by filling the gap between the said electrodes (51, 52) with materials (54, 56) having different dielectric constants and different thicknesses. With arelation of 1:10 of the dielectric constants and a thickness relation of 1:5, animprovement factor of about 40 can be obtained.

公开(公告)号：DE3561251D1

公开(公告)日：1988-02-04

申请号：DE3561251

申请日：1985-04-30

Applicant: IBM

Inventor： BINNIG GERD KARL ,  GERBER CHRISTOPH EMANUEL ,  ROHRER HEINRICH ,  WEIBEL EDMUND

IPC: C23C14/22 ,  B82B3/00 ,  C23C14/04 ,  C23C14/24 ,  C23C26/00 ,  G11B9/00 ,  G11B9/14 ,  H01J37/317 ,  H01L21/203 ,  H01L21/285 ,  C23C14/14 ,  C23C14/34 ,  G11B5/84

Abstract: This method involves the deposition of free metal atoms (4) from the apex (5) of a pointed tip (1) supported at a distance of 10 to 20 nm from a substrate (2). The atoms (4) are being field-desorbed under the influence of a strong electric field existing between the tip (1) and the substrate (2). With the tip (1) being moved across the substrate (2), a narrow trace (6) of metal atoms will be deposited on the substrate.