公开(公告)号：WO2012009183A3

公开(公告)日：2012-04-26

申请号：PCT/US2011042991

申请日：2011-07-06

Applicant: IBM ,  BAGHERI SAEED ,  DEMARIS DAVID L ,  GABRANI MARIA ,  MELVILLE DAVID OSMOND ,  ROSENBLUTH ALAN E ,  TIAN KEHAN

Inventor： BAGHERI SAEED ,  DEMARIS DAVID L ,  GABRANI MARIA ,  MELVILLE DAVID OSMOND ,  ROSENBLUTH ALAN E ,  TIAN KEHAN

IPC: H01L21/027 ,  H01L21/66

CPC classification number: G03F1/70 ,  G06F17/5081

Abstract: The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate i{ of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate ft, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate 6,, and a total energy entropy factor comprising total energy entropy of said diffraction orders (430, 440). The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=l, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=l. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.

Abstract translation: 本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着沿着空间频率空间的角坐标i的衍射级的难以打印能量的容易打印能量的比率， 包括沿着所述角坐标ft的所述衍射级的能量熵的能量熵因子，包括沿着所述角坐标6的所述衍射级的相位熵的相位熵因子，以及包括所述衍射级的总能量熵的总能量熵因子 430,440）。 难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括 位于r = 0附近和r = 1附近的归一化径向坐标r的中间值处的衍射级的能量。 光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。 光刻难度度可用于设计具有良好的，相对易于打印的特性的集成电路。

公开(公告)号：WO2008057996A3

公开(公告)日：2008-07-10

申请号：PCT/US2007083441

申请日：2007-11-02

Applicant: IBM ,  LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

Inventor： LAI KAFAI ,  ROSENBLUTH ALAN E ,  GALLATIN GREGG M ,  MUKHERJEE MAHARAJ

IPC: G06F17/50

CPC classification number: G03F1/36

Abstract: A fast method of verifying a lithographic mask design is provided wherein catastrophic errors (432) are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models (411), including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side- lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.

Abstract translation: 提供了验证光刻掩模设计的快速方法，其中通过使用包括光学和抗蚀剂模型的逐渐更准确的图像模型（411）迭代模拟和验证掩模布局的图像来识别灾难性错误（432）。 逐渐精确的光学模型包括提供连续影响较小的SOCS内核。 构建对应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS内核项，或者可以包括不同影响范围的图像特征项。 与过量光相关的错误，例如桥接，旁瓣或SRAF打印错误，优选地用明场模拟来识别，而与光线不足有关的错误例如颈缩或线端缩短覆盖错误优选地用暗场识别 模拟。

公开(公告)号：JP2010140021A

公开(公告)日：2010-06-24

申请号：JP2009256225

申请日：2009-11-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： INOUE TADANORI ,  TIAN KEHAN ,  MELVILLE DAVID O ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E ,  SAKAMOTO MASAHARU

IPC: G03F1/08 ,  H01L21/027

CPC classification number: G03F1/76 ,  G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method for computing manufacturability of a lithographic mask to be used for manufacturing a semiconductor device. SOLUTION: Target edge pairs are selected from the mask layout data of a lithographic mask for computinging a manufacturing penalty as an index indicating the difficulty of manufacturing in making a lithographic mask. The mask layout data includes polygons, and each polygon has a large number of edges. Each target edge pair is defined by two edges of edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs selected. Determining the manufacturability of the lithographic mask uses continuous differentiability of the maufacturability defined on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于计算用于制造半导体器件的光刻掩模的可制造性的方法。

解决方案：从用于计算制造罚款的光刻掩模的掩模布局数据中选择目标边缘对作为指示制造光刻掩模的制造难度的指标。 掩模布局数据包括多边形，并且每个多边形具有大量边缘。 每个目标边对由一个或多个多边形的边缘的两个边缘限定。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边对。 确定平版印刷掩模的可制造性使用在连续刻度上定义的可制造性的连续可微性。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2007129222A

公开(公告)日：2007-05-24

申请号：JP2006294892

申请日：2006-10-30

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LAI KAFAI ,  PFEIFFER DIRK ,  ROSENBLUTH ALAN E

IPC: H01L21/027

CPC classification number: G03F7/70216

Abstract: PROBLEM TO BE SOLVED: To provide a method and a system for exposing a resist layer with regions of photosensitivity to an image in a lithographic process using a high numerical aperture imaging tool. SOLUTION: There is employed a substrate having thereover a layer reflective to the imaging tool radiation and a portion of the radiation containing an aerial image passes through the resist layer, and reflects back to the resist layer. The reflected radiation forms an interference pattern in the resist layer of the projected aerial image through the resist layer thickness. The thickness and location of the resist layer region of photosensitivity with respect to the reflective layer are selected to include from within the interference pattern higher contrast portions of the interference pattern in the direction of the resist thickness, to exclude lower contrast portions of the interference pattern in the resist thickness direction from the resist layer region of photosensitivity, and to improve contrast of the aerial image in the resist layer region of photosensitivity. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种方法和系统，用于使用高数值孔径成像工具在光刻工艺中将抗蚀剂层与对图像的光敏感区域进行曝光。 解决方案：采用具有反射成像工具辐射的层的衬底，并且包含空间图像的一部分辐射穿过抗蚀剂层，并反射回抗蚀剂层。 反射辐射通过抗蚀剂层厚度在投影空间图像的抗蚀剂层中形成干涉图案。 选择相对于反射层的光敏层的抗蚀剂层区域的厚度和位置，以便在干涉图形内包括在抗蚀剂厚度方向上的干涉图案的较高对比度部分，以排除干涉图案的较低对比度部分 在抗蚀剂厚度方向上从抗蚀剂层区域的感光度，并改善抗敏剂层区域中的空间图像的光敏性的对比度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2013213973A

公开(公告)日：2013-10-17

申请号：JP2012084657

申请日：2012-04-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： INOUE TADANORI ,  MELVILLE DAVID O ,  ROSENBLUTH ALAN E ,  SAKAMOTO MASAHARU ,  TIAN KEHAN

IPC: G03F1/70 ,  H01L21/027

CPC classification number: G03F1/70

Abstract: PROBLEM TO BE SOLVED: To provide a mask design method, a program thereof, and a mask design system.SOLUTION: The mask design system according to the present invention includes: an optimization unit 120 having a global mask optimization section 122 and a global light source optimization section 123; and an optical domain simultaneous optimization unit (FDJO) 124. The optimization unit 120 performs a non-linear optimization for an optical domain representation of a mask pattern under a constraint condition that a value of a negative deviation of the object domain representation at a prescribed evaluation point of a restored object domain representation is smaller than a value of a predetermined negative threshold of the evaluation point.

Abstract translation: 要解决的问题：提供掩模设计方法，程序和掩模设计系统。根据本发明的掩模设计系统包括：具有全局掩模优化部分122和全局光的优化单元120 源优化部分123; 和光域同步优化单元（FDJO）124.优化单元120在限制条件下对掩模图案的光域表示执行非线性优化，所述约束条件是目标域表示在规定的负值偏差的值 恢复的对象域表示的评估点小于评估点的预定负阈值的值。

公开(公告)号：JP2005167253A

公开(公告)日：2005-06-23

申请号：JP2004349370

申请日：2004-12-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ROSENBLUTH ALAN E

IPC: G03F7/20 ,  G03B27/72 ,  H01L21/027

CPC classification number: G03F7/70125

Abstract: PROBLEM TO BE SOLVED: To provide a method for illuminating a lithographic mask with light from different directions, in such a way that the intensities of the various incident beams provide the largest possible integrated process window. SOLUTION: The process window is defined in terms of allowable ranges for printed shapes. For example, boundaries of the process window may be defined by shape limits corresponding to underexposed and overexposed conditions. Intensity parameters for representing the maximum possible intensities that can be permitted for overexposed tolerance positions are imposed through application of various constraints. Another set of intensity parameters for representing the minimum possible intensities that can be permitted for underexposed tolerance positions are imposed through application of various constraints. One parameter of each kind is defined for each of a number of different focal ranges. The optimum illumination source intensities are determined from a linear program involving the above other constraints. The determined illumination source intensities maximize the integrated range of dose and focal variations that can be tolerated without causing the printed shapes to depart from the allowed range of shapes. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于从具有不同方向的光照射光刻掩模的方法，使得各种入射光束的强度提供最大可能的集成处理窗口。

解决方案：过程窗口根据打印形状的允许范围进行定义。 例如，过程窗口的边界可以由对应于曝光不足和曝光过度的条件的形状限制来定义。 通过应用各种约束来强加用于表示可能允许暴露过度的公差位置的最大可能强度的强度参数。 通过应用各种约束来施加另一组强度参数，用于表示可以允许曝光不足位置的最小可能强度。 为各种不同的焦点范围中的每一个定义了每种类型的一个参数。 从包含上述其他约束的线性程序确定最佳照明光源强度。 所确定的照明源强度使得可以容忍的剂量和焦点变化的集成范围最大化，而不会使印刷形状偏离允许的形状范围。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005129958A

公开(公告)日：2005-05-19

申请号：JP2004309629

申请日：2004-10-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： GALLATIN GREGG M ,  GOFMAN EMANUEL ,  LAI KAFAI ,  LAVIN MARK A ,  MUKHERJEE MAHARAJ ,  RAMM DOV ,  ROSENBLUTH ALAN E ,  SHLAFMAN SHLOMO

IPC: H01L21/027 ,  G03F1/14 ,  G03F7/20 ,  G06K9/00 ,  H01L21/00

CPC classification number: G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method and a program storage device in which model base optical proximity collection is performed, by providing a region of interest (ROI) having interaction distance and tracing at least one polygon in the ROI.
SOLUTION: A cut line or a plurality of cut lines of sample points showing a set of apexes are formed within the ROI so as to be traversed at least one side edge of polygon. By determining an angular position, and a first part and a second part of the cut line in opposing side surfaces which intersect between the cut line and the side edge of the polygon, and then, based on the angular position and the first part and the second part of the cut line extending the original ROI over the interaction distance, new ROI is formed. By this form, various new ROI is formed in various different directions. Finally, optical proximity can be corrected.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种方法和程序存储装置，其中通过提供具有交互距离的感兴趣区域（ROI）和跟踪ROI中的至少一个多边形来执行模型基础光学邻近度收集。 解决方案：在ROI内形成切割线或多个示出点的切割线的切割线，以便遍历多边形的至少一个侧边缘。 通过确定角位置，以及在切割线和多边形的侧边之间相交的相对侧表面中的切割线的第一部分和第二部分，然后基于角位置和第一部分以及 切割线的第二部分通过交互距离延伸原始ROI，形成新的ROI。 通过这种形式，在各种不同的方向上形成各种新的ROI。 最后，可以校正光学接近度。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002261004A

公开(公告)日：2002-09-13

申请号：JP2002016872

申请日：2002-01-25

Applicant: IBM

Inventor： ROSENBLUTH ALAN E ,  BUKOFSKY SCOTT JOSEF ,  WONG ALFRED K K

IPC: G03F1/32 ,  G03F1/34 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for optimally selecting an illuminating distribution and a reticle mask feature. SOLUTION: A system and the method for printing the pattern on a semiconductor by a lithography are executed by using a combination of an illumination and a mask pattern to be optimized so as to generate a desired pattern. A method for optimizing both the illumination and the mask pattern can develop the mask pattern not restricted by the desired pattern of the shape to be printed. Accordingly, this method can provide a high quality image even when the desired printing pattern has a critical size approaching to a resolving power of the lithographic system. The mask pattern of the result by this method does not clearly correspond to the printed desired pattern. Such a mask includes a phase shifting technique for forming a dark area of the image by utilizing a destructive interference, and is not restricted so as to coincide with the desired printing pattern.

公开(公告)号：DE10008337B4

公开(公告)日：2013-08-22

申请号：DE10008337

申请日：2000-02-23

Applicant: IBM

Inventor： HO KENNETH C ,  LU MINHUA ,  ROSENBLUTH ALAN E ,  YANG KEI-HSIUNG

IPC: G02F1/1335 ,  G02B27/28 ,  G09G3/36 ,  G02F1/13 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/139 ,  G03B21/14 ,  G03B21/28 ,  G09G3/20 ,  H04N5/74 ,  H04N9/31

Abstract: Reflektierendes Lichtventil zum Bereitstellen eines verbesserten Dunkelzustands, wobei das reflektierende Lichtventil beinhaltet: ein transparentes Substrat; eine verdrehte, nematische Flüssigkristallschicht, die Flüssigkristallmoleküle mit einer Direktor-Achse aufweist; und eine Rückebene, die von dem transparenten Substrat durch die verdrehte nemantische Flüssigkristallschicht getrennt ist, wobei die Rückebene aus einem unteren Substrat und einer Ausrichtungsschicht besteht, wobei das untere Substrat reflektierende Elektroden mit Kanten beinhaltet, wobei die Direktor-Achse der Flüssigkristallschicht am unteren Substrat aufgrund der Reibrichtung der Ausrichtungsschicht in Bezug auf die Kanten der reflektierenden Elektroden parallel oder senkrecht ausgerichtet ist, wobei die reflektierenden Elektroden sägezahnförmige Kanten aufweisen, wobei die Segmente der einzelnen sägezahnförmigen Kanten jeder reflektierenden Elektrode unter den Winkeln 45° und 135° bezüglich der einfallenden Polarisation angeordnet sind.

公开(公告)号：AU2002245044A1

公开(公告)日：2002-07-30

申请号：AU2002245044

申请日：2001-11-30

Applicant: IBM

Inventor： LIEN SHUI-CHIH ,  DOANY FUAD E ,  HOUGHAM GARETH G ,  CHAUDHARI PRAVEEN ,  DOYLE JAMES P ,  LACEY JAMES A ,  YANG KEI-HSIUNG ,  GALLIGAN EILEEN A ,  GLOWNIA JAMES H ,  ROSENBLUTH ALAN E ,  LU MINHAU ,  CALLEGARI ALESSANDRO C

IPC: B01J19/12 ,  C01B31/02 ,  C23C14/48 ,  C23C14/58 ,  G02F1/1337

Abstract: A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.