公开(公告)号：DE2636280A1

公开(公告)日：1977-03-10

申请号：DE2636280

申请日：1976-08-12

Applicant: IBM

Inventor： IRENE EUGENE ARTHUR ,  SILVESTRI VICTOR JOSEPH ,  ZIRINSKY STANLEY

IPC: H01L27/112 ,  C23C16/22 ,  C23C16/34 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01B5/14 ,  G11C17/04 ,  G11C11/24

Abstract: Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500 DEG to about 1,300 DEG C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.

公开(公告)号：DE3850843D1

公开(公告)日：1994-09-01

申请号：DE3850843

申请日：1988-09-13

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

公开(公告)号：DE3686310T2

公开(公告)日：1993-03-18

申请号：DE3686310

申请日：1986-10-23

Applicant: IBM

Inventor： SILVESTRI VICTOR JOSEPH ,  TSANG PAUL JAMIN

IPC: H01L27/082 ,  H01L21/331 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8228 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/08 ,  H01L27/088 ,  H01L27/092 ,  H01L29/73

Abstract: A method of fabricating dielectrically isolated integrated circuit devices, comprising the following steps: using a semiconductor substrate with upper and lower portions (14, 12), doping said upper portion (14) of said substrate in accordance with types of devices to be formed, said lower portion (12) of said substrate forming a plurality of subcollectors. (i)(a) forming a masking layer (20) over said substrate; (i)(b) etching a plurality of holes (30) in said masking layer; and (i)(c) isotropically etching a plurality of active device regions (40) in said substrate through said holes, (ii) growing an oxide layer (50) over portions of said substrate where said devices are to be formed; (iv) forming said devices by selective epitaxial growth in said regions (40).

公开(公告)号：DE3686125D1

公开(公告)日：1992-08-27

申请号：DE3686125

申请日：1986-10-10

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/76 ,  H01L21/225 ,  H01L21/74 ,  H01L21/763 ,  H01L29/41 ,  H01L21/20

Abstract: A method of simultaneously producing doped silicon filled trenches (20) in areas where a substrate contact is to be produced and trench isolation (18) in other areas. Boro­silicate glass (28) lines the sidewalls of those trenches (20) where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate (28) to dope the epitaxial silicon in those trenches. In the other trenches (18), the silicon fill remains undoped except at the bottom where a channel stop (32) exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a por­tion of the trench and the adjacent substrate surface.