公开(公告)号：DE3370558D1

公开(公告)日：1987-04-30

申请号：DE3370558

申请日：1983-05-25

Applicant: IBM

Inventor： HSIEH NING ,  IRENE EUGENE ARTHUR ,  ISHAQ MOUSA HANNA ,  ROBERTS STANLEY

IPC: C01B33/12 ,  B05D5/12 ,  C01B33/113 ,  H01B3/02 ,  H01G2/12 ,  H01G4/06 ,  H01G4/08 ,  H01G4/10 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01L29/94

Abstract: An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400°C or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.

公开(公告)号：DE2636280A1

公开(公告)日：1977-03-10

申请号：DE2636280

申请日：1976-08-12

Applicant: IBM

Inventor： IRENE EUGENE ARTHUR ,  SILVESTRI VICTOR JOSEPH ,  ZIRINSKY STANLEY

IPC: H01L27/112 ,  C23C16/22 ,  C23C16/34 ,  H01L21/28 ,  H01L21/318 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01B5/14 ,  G11C17/04 ,  G11C11/24

Abstract: Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500 DEG to about 1,300 DEG C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.