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公开(公告)号：DE69923244T2
公开(公告)日：2006-01-12
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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公开(公告)号：DE69903206D1
公开(公告)日：2002-11-07
申请号：DE69903206
申请日：1999-01-20
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array. Only the cell at an intersecting region selected by stimuli applied via each of the first and second electrically conductive lines forming the selected region is written, and other cells along the first and second electrically conductive lines forming the selected region are not written. An operating window of applied electrical and therefore magnetic stimuli can be defined to ensure cell selectivity across the memory array.
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公开(公告)号：GB2528806A
公开(公告)日：2016-02-03
申请号：GB201517577
申请日：2014-11-05
Applicant: IBM
Inventor： ANNUNZIATA ANTHONY JOSEPH , TROUILLOUD PHILIP LOUIS , WORLEDGE DANIEL CHRISTOPHER , BANDIERA SEBASTIEN , LOMBARD LUCIEN , PREJBEANU LUCIAN
Abstract: A thermally assisted magnetoresistive random access memory device (TAS-MRAM or Thermal MRAM). The device operates as a magnetic tunnel junction (MTJ) which comprises a tunnel barrier junction 14 sandwiched between a sense ferromagnetic layer 16 and a synthetic antiferromagnetic layer (SAF) 12 which acts as a storage layer. SAF layer comprises two proximate ferromagnetic layers 11, 13 separated by a non magnetic coupling layer 15 (ruthenium Ru). Adjacent to the SAF layer is a pinning layer 30 which fixes the magnetic orientation of the antiferromagnetic layers in normal operation but when electrically heated during the write cycle, unpins the magnetic orientations of the SAF ferromagnetic layers allowing programming of the TAS-MRAM MTJ device, by an adjacent magnetic filed 80. The ferromagnetic material may comprise Co, Fe, Ni or any alloys of these elements. At least one of the ferromagnetic layers in the ferromagnetic sense layer or in the constituents of the synthetic antiferromagnetic layer may comprise a non magnetic material acting as dopants, for example Ta, Ti, Hf, Cr, Nb, Mo or Zr or alloys of these elements. The doped ferromagnetic layers may be formed from sputtering, co-sputtering and may also form layers or a laminate (figures 8A-C). The ensuing reduction in the magnetostatic interaction dispersions between the relative ferromagnetic sense and storage layers leads to a reduction in reading or writing power consumption. It also allows a relatively larger thickness for each or any of the ferromagnetic layers, which may within the range 10Ã -60Ã .
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公开(公告)号：BRPI0215706B1
公开(公告)日：2016-01-19
申请号：BR0215706
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C11/16 , G11C7/04 , H01L21/8246 , H01L27/105 , H01L43/08
Abstract: "dispositivo de armazenamento de memória com elemento de aquecimento". um dispositivo de armazenamento de memória é provido, que inclui uma célula de armazenamento que tem uma região magnética mutável. a região magnética mutável (20) inclui um material tendo um estado de magnetização que responde a uma mudança de temperatura. o dispositivo de armazenamento de memória também inclui um elemento de aquecimento. o elemento de aquecimento está próximo da célula de armazenamento para mudança seletiva da temperatura da região magnética mutável da referida célula de armazenamento. pelo aquecimento da célula de armazenamento (50) através do elemento de aquecimento, em oposição ao aquecimento da célula de armazenamento pela aplicação direta de corrente a ela, é provida mais flexibilidade na fabricação das células de armazenamento.
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公开(公告)号：DE69924655T2
公开(公告)日：2006-01-19
申请号：DE69924655
申请日：1999-02-04
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.
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Patent Agency Ranking
公开(公告)号：DE69924655D1
公开(公告)日：2005-05-19
申请号：DE69924655
申请日：1999-02-04
Applicant: IBM
IPC: G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.
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公开(公告)号：DE69923244D1
公开(公告)日：2005-02-24
申请号：DE69923244
申请日：1999-02-04
Applicant: IBM
IPC: G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region. The principles of the present invention can be applied to magnetic random access memory ("MRAM") arrays, which employ giant magnetoresistive ("GMR") cells, or magnetic tunnel junction ("MTJ") cells, at the intersections of bitlines and wordlines, and also to magnetic sensors such as magnetic data storage devices having access elements used to access data on a magnetic data storage medium.
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公开(公告)号：BR0215706A
公开(公告)日：2005-02-22
申请号：BR0215706
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：AU2002356961A1
公开(公告)日：2003-11-10
申请号：AU2002356961
申请日：2002-11-15
Applicant: IBM
Inventor： ABRAHAM DAVID WILLIAM , TROUILLOUD PHILIP LOUIS
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing the temperature of the changeable magnetic region of said storage cell. By heating the storage cell via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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公开(公告)号：CA2481583A1
公开(公告)日：2003-11-06
申请号：CA2481583
申请日：2002-11-15
Applicant: IBM
Inventor： TROUILLOUD PHILIP LOUIS , ABRAHAM DAVID WILLIAM
IPC: G11C11/15 , G11C7/04 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/18 , G11C11/00 , G11C7/02
Abstract: A memory storage device is provided that includes a storage cell having a changeable magnetic region. The changeable magnetic region (20) includes a material having a magnetization state that is responsive to a change in temperature. The memory storage device also includes a heating element. The heating element is proximate to the storage cell for selectively changing th e temperature of the changeable magnetic region of said storage cell. By heati ng the storage cell (50) via the heating element, as opposed to heating the storage cell by directly applying current thereto, more flexibility is provided in the manufacture of the storage cells.
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