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    METHOD AND APPARATUS FOR CONTROLLING BRIGHTNESS AND ALIGNMENT OF A BEAM OF CHARGED PARTICLES
    11.
    发明专利
    METHOD AND APPARATUS FOR CONTROLLING BRIGHTNESS AND ALIGNMENT OF A BEAM OF CHARGED PARTICLES 未知

    公开(公告)号：CA1041178A

    公开(公告)日：1978-10-24

    申请号：CA231509

    申请日：1975-07-15

    Applicant: IBM

    Inventor： HALL ALAN V ,  PERKINS MERLYN H ,  PFEIFFER HANS C ,  WEBER EDWARD V ,  WOODARD OLLIE C

    IPC: H01J37/305 ,  H01J37/147 ,  H01J37/304 ,  H01L21/027 ,  H01J37/31

    Abstract: METHOD AND APPARATUS FOR CONTROLLING BRIGHTNESS AND ALIGNMENT OF A BEAM OF CHARGED PARTICLES A beam of charged particles has its alignment and brightness alternately controlled in accordance with the current of the beam. The measurements of the current and any corrections for alignment or brightness are made when the beam is not applied to a target. In operation the beam is applied to the target for a predetermined period of time. When the beam is not applied to the target it's positioning on the target is aligned and the brightness of the beam is controlled. This aligning and controlling occurs during a predetermined period of time between the periods of time when the beam is actually applied to the target. Apparatus for maintaining the substantially uniform current density of the beam of charge particles is also provided.

    METHOD AND APPARATUS FOR POSITIONING A BEAM OF CHARGED PARTICLES
    13.
    发明专利
    METHOD AND APPARATUS FOR POSITIONING A BEAM OF CHARGED PARTICLES 未知

    公开(公告)号：CA1016667A

    公开(公告)日：1977-08-30

    申请号：CA214984

    申请日：1974-11-29

    Applicant: IBM

    Inventor： MICHAIL MICHEL S ,  WOODARD OLLIE C ,  YOURKE HANNON S

    IPC: H05K3/00 ,  H01J37/147 ,  H01J37/304 ,  H01J37/305 ,  H01L21/027

    Abstract: 1480561 Automatic control of particle beams INTERNATIONAL BUSINESS MACHINES CORP 8 Jan 1975 [28 Jan 1974] 817/75 Heading G3N In the use of a beam of charged particles {electrons}applied to a target, the latter being provided with reference markings 42 delineating four sided fields 40, the deviation of the markings for one field from their assumed positions as determined by control 17-19 is determined, and, on the basis of disclosed algebraic analysis, a set of parameters, determining the displacement and distortion of the actual field with respect to the assumed field, are evaluated and used so that, for each beam position in the assumed field, a correction is applied to define a corresponding position in the actual field, the correction of the assumed marking positions being their actual positions. The target may be a semi-conductor wafer, the beam being used to write a pattern on an electroresist, or on a silicon dioxide layer to enhance its etch rating, such that a single pattern may encompass a plurality of fields, or patterns on several levels may be written on one field, the correction ensuring correct registration. The pattern data from computer 19 is used to cause the electron beam 11 to be scanned, in accordance with the assumed field, (50), Fig. 3 (not shown) by magnetic deflection coils 23-26, voltages proportional to the instantaneous deflection currents being passed on lines 55, 56 to the correction circuit, Fig. 2 receiving also the determined values of the parameters for the field being scanned, the circuit calculating corresponding instantaneous deflection voltages which are applied to plates 31- 34 correcting the beam deflection for each point of the field from the assumed to the actual field (51, Fig. 3). The parameters A-H, Fig. 2 are received by the correction circuit in digital form, to be processed in multiplying, and normal d/a converters 58, 59, 62-67, Fig. 2. The correction allows for translation, magnification, rotation and/ or trapezoidal error in the field. A further electrostatic circuit, Fig. 7 (not shown) may be used in conjunction with the scan; which may be a raster, or with alternate X scans being in opposed senses; to provide corrections to ensure linearity, or a steady beam offset fed in via d/a converter (125). Magnetic deflection circuit, Fig. 6 (not shown). In accordance with digital input from control(18), or selected combination of the positive, and negative constant current sources (70-75) may be coupled to integrator (77, 84) providing a scanning waveform corrected for linearity by circuitry (85), and an auxiliary circuit receiving data from the control (18). Upon beam reversal at the end of a line, circuit (98, 95, 96) is active to ensure that the beam attains an end point determined by the input to d/a converter (96), an error signal from amplifier (95) controlling integrator (77, 84) at this time. Each marking, Fig. 5 (not shown), comprises orthogonal rows (43, 44) of depressions or raised portions, detected by the electron beam. The beam may be used to prepare engineering drawings on a CRT, or for electron beam welding or cutting, or for forming a mask.

    15.
    发明专利
    未知

    公开(公告)号：FR2276689A1

    公开(公告)日：1976-01-23

    申请号：FR7516538

    申请日：1975-05-21

    Applicant: IBM

    Inventor： DAVIS DONALD E ,  HABEGGER MILLARD A ,  MOORE RICHARD D ,  WEBER EDWARD V ,  WOODARD OLLIE C

    IPC: G05D3/12 ,  H01J37/304 ,  H01L21/027 ,  H01L21/00 ,  G01B7/14 ,  G06F15/20

    Abstract: 1508903 Wave energy position finding INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [27 June 1974] 22919/75 Heading G1A [Also in Division H4] The position of a registration mark on a target (e.g. a semi-conductor wafer) is detected by irradiating the mark with a beam of charged particles. The present invention is stated to be an improvement over the system described in Specification 1480562. As described, each mark 42, Fig. 17, consists of vertical and horizontal bars 44, 43 (raised portions or depressions), the position of the mark being determined from 20 horizontal (X) scans followed by 20 vertical (Y) scans, successive scans being in opposite directions. Peak signals corresponding to the edges of a bar are detected and applied to threshold circuitry which is updated during each scan. Diodes 45, 46 and 45', 46' detect radiation during X, Y scans respectively, the arrangement including extra diodes 47 and an extra lead going to a respective preamplifier 48-66 for noise suppression. X-scanning: The outputs 70, 71 from diodes 45, 46 contain peaks 72 &c. corresponding to the edges of a bar 44. These signals pass to a differential amplifier 69 via balancers 58, 60 which compensate for the fact that the mark being scanned will be nearer one diode than the other. The output 85, Fig. 13, from amplifier 69 contains positive and negative peaks 86, 87 corresponding to the edges of a bar. The signals are shown without any ramp component. Such component is removed in filter 89 to leave the peak signals plus a substantially constant residual baseline voltage, Figs. 14 and 15 (not shown). The output from filter 89 is fed via an AGC circuit 90 to positive and negative peak detectors 99, 100 and an averaging circuit 122. During the first scan, outputs 103, 104 from detectors 99, 100 are used to set the gain levels in AGC 90 for subsequent scans so as to compensate for the surface conditions on the wafer in the region of the mark being scanned. At the end of the first scan the contents of 99, 100, 122 are passed to stores 143, 128, 136 the outputs of which are combined by means of resistors 144, 140, 137 to produce positive and negative threshold signals 134 and 141 which are correlated with the residual baseline voltage. These signals pass via differential amplifiers 135, 142 to act as threshold levels for voltage comparators 118, 119 receiving signals from AGC 90 via a switch 116 (blocked during the first scan). During the second scan, fresh data is fed to detectors 99 &c. and stores 143 &c. and switch 116 is enabled to pass the output of AGC 90 to the comparators, outputs of which are however not used until the third scan. During the third and subsequent scans, comparators 118, 119 produce signals whenever the signals from AGC 90 cross the levels set during the preceding scan by amplifiers 135, 142. The ORed outputs from 118, 119 enable a gate 151, so that clockpulses 153 pass to a feedback channel 152 and a computer 19 which uses the detected-edge signals, averaged over the last 18 scans, to determine the location of mark 42. Since successive scans occur in opposite directions, stores 143, 136 incorporate means for reversing the sign of their outputs, so that detectors 99, 100 continue to detect the same edge of a bar 44 during successive scans. The Y-scan is then performed in the same way. The various blocks of Fig. 2 are described in detail with reference to Figs. 3-9 (not shown).

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