公开(公告)号：DE60103181T2

公开(公告)日：2005-05-04

申请号：DE60103181

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： CHEN A ,  HIRSCH ALEXANDER ,  IYER UMAR ,  ROVEDO NIVO ,  WANN HSING-JEN ,  ZHANG YING

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

公开(公告)号：GB2487309B

公开(公告)日：2014-03-19

申请号：GB201201714

申请日：2010-10-19

Applicant: IBM

Inventor： DORIS BRUCE ,  ZHANG YING ,  CHENG KANGGUO ,  HOLMES STEVEN ,  HUA XUEFENG

IPC: H01L21/033 ,  H01L21/308

Abstract: A structure for a semiconductor device is disclosed. The structure includes a first feature and a second feature. The first feature and the second feature are formed simultaneously in a single etch process from a same monolithic substrate layer and are integrally and continuously connected to each other. The first feature has a width dimension of less than a minimum feature size achievable by lithography and the second feature has a width dimension of at least equal to a minimum feature size achievable by lithography.

公开(公告)号：DE112010004804T5

公开(公告)日：2012-11-15

申请号：DE112010004804

申请日：2010-10-28

Applicant: IBM

Inventor： ZHANG YING ,  DORIS BRUCE ,  CHENG KANGGUO

IPC: H01L21/336

Abstract: Ein Verfahren zum Herstellen von Elementen für eineiner ersten Halbleiterstruktur auf einer Fläche einer Halbleitereinheit und das epitaxiale Anwachsen von Halbleitermaterial auf gegenüber liegenden Seiten der ersten Halbleiterstruktur, um Finnen zu bilden. Auf einer Seite der ersten Halbleiterstruktur wird eine erste abgewinkelte Ionenimplantation angewendet, um eine entsprechende Finne auf der einen Seite zu dotieren. Die erste Halbleiterstruktur wird selektiv entfernt, um die Finnen frei zu legen. Unter Verwendung der Finnen werden Finnen-Feldeffekttransistoren gebildet.

公开(公告)号：DE60103181D1

公开(公告)日：2004-06-09

申请号：DE60103181

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： CHEN A ,  HIRSCH ALEXANDER ,  IYER UMAR ,  ROVEDO NIVO ,  WANN HSING-JEN ,  ZHANG YING

IPC: H01L21/762 ,  H01L21/8234 ,  H01L29/06 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

Abstract: A patterned buried insulator is formed beneath the source and drain by forming a mask over the body area and implanting a dose of n or p type ions in the areas where the source and drains will be formed, then etching the STI and etching out the implanted area. A light oxidation is followed by a conformal oxide deposition in the STI and also in the etched area, thereby forming the buried oxide only where desired.

公开(公告)号：DE19506745A1

公开(公告)日：1995-09-14

申请号：DE19506745

申请日：1995-02-27

Applicant: IBM

Inventor： OEHRLEIN GOTTLIEB STEFAN ,  VENDER DAVID ,  ZHANG YING ,  HAVERLAG MARCO

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

Abstract: Apparatus for etching substrates using a plasma gas current includes a deposit resistant surface surrounding the substrate in its holder. Means are provided for heating the surface to 100-600 deg C in order to prevent unwanted material deposition. Use - In the etching of semiconductor components. Advantage - Effectively prevents the deposition of unwanted coatings on the inside walls of the apparatus without harming the flow of plasma over the substrate.

公开(公告)号：GB2488642A

公开(公告)日：2012-09-05

申请号：GB201202927

申请日：2010-10-28

Applicant: IBM

Inventor： ZHANG YING ,  CHENG KANGGUO ,  DORIS BRUCE

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/336 ,  H01L29/78

Abstract: A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantation is applied to one side of the first semiconductor structure to dope a respective fin on the one side. The first semiconductor structure is selectively removed to expose the fins. Fin field effect transistors are formed using the fins.

公开(公告)号：GB2487309A

公开(公告)日：2012-07-18

申请号：GB201201714

申请日：2010-10-19

Applicant: IBM

Inventor： DORIS BRUCE ,  ZHANG YING ,  CHENG KANGGUO ,  HOLMES STEVEN ,  HUA XUEFENG

IPC: H01L21/033 ,  H01L21/308

Abstract: A method for fabrication of features for an integrated circuit includes patterning a mandrel layer to include structures having at least one width on a surface of an integrated circuit device. Exposed sidewalls of the structures are reacted to integrally form a new compound in the sidewalls such that the new compound extends into the exposed sidewalls by a controlled amount to form pillars. One or more layers below the pillars are etched using the pillars as an etch mask to form features for an integrated circuit device.

公开(公告)号：DE19506745C2

公开(公告)日：1996-12-19

申请号：DE19506745

申请日：1995-02-27

Applicant: IBM

Inventor： OEHRLEIN GOTTLIEB STEFAN ,  VENDER DAVID ,  ZHANG YING ,  HAVERLAG MARCO

IPC: C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

公开(公告)号：GB2497399B

公开(公告)日：2014-02-19

申请号：GB201221060

申请日：2012-11-23

Applicant: IBM

Inventor： ZHANG YING ,  LIU FEI ,  GUILLORN MICHAEL

IPC: B81C1/00

公开(公告)号：GB2488642B

公开(公告)日：2013-12-11

申请号：GB201202927

申请日：2010-10-28

Applicant: IBM

Inventor： ZHANG YING ,  CHENG KANGGUO ,  DORIS BRUCE

IPC: H01L21/265 ,  H01L21/02 ,  H01L21/336 ,  H01L29/78