公开(公告)号：DE102006001252A1

公开(公告)日：2007-07-26

申请号：DE102006001252

申请日：2006-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L29/739

Abstract: The component has a semiconductor body (1) in vertical direction (v), a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5). The p-doped emitter has a several strongly p-doped zones (82) with a locally increased p-doping. The strongly p-doped zones of the n-doped base are spaced, where the strongly p-doped zones are reached through the n-base. An independent claim is also included for a method for production of a bipolar power semiconductor component includes initiating a semiconductor body in a vertical direction.

公开(公告)号：DE102006000903A1

公开(公告)日：2007-07-12

申请号：DE102006000903

申请日：2006-01-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER ,  KELLNER-WERDEHAUSEN UWE

IPC: H01L29/74 ,  H01L21/265

Abstract: The thyristor has a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter are consecutively arranged in a vertical direction. An ignition stage (ZS1) is arranged between an ignition device and the main emitter in a lateral direction, which is perpendicular to the vertical direction. A lattice defect zone (13) is arranged between an n-doped ignition stage emitter and the n-doped base in the vertical direction. A crystal lattice defect seal of the body is locally added in the lattice defect zone. An independent claim is also included for a method for manufacturing a thyristor.

公开(公告)号：DE102005037573B4

公开(公告)日：2007-05-31

申请号：DE102005037573

申请日：2005-08-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L21/332 ,  H01L23/62 ,  H01L27/082 ,  H01L31/111 ,  H03K17/72

Abstract: A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).

公开(公告)号：DE10048859B4

公开(公告)日：2005-12-15

申请号：DE10048859

申请日：2000-10-02

Applicant: INFINEON TECHNOLOGIES AG ,  EUPEC GMBH & CO KG

Inventor： SCHILLING OLIVER ,  SEIDELMANN HELMUT ,  SCHOLZ DETLEF ,  BAUER JOSEF ,  PORST ALFRED ,  BEUERMANN MAX ,  BARTHELMESS REINER

IPC: H01L23/051 ,  H01L23/48

Abstract: The pressure contact units (11, 12) are designed to produce an essentially symmetrical, uniform and/or homogeneous pressure distribution in the electronic component (20). This is especially so, in the regions (21a, 22a) between the contact surfaces (21, 22).

公开(公告)号：DE102004013405A1

公开(公告)日：2005-10-06

申请号：DE102004013405

申请日：2004-03-18

Applicant: EUPEC GMBH & CO KG ,  INFINEON TECHNOLOGIES AG

Inventor： BARTHELMESS REINER ,  SCHULZE HANS-JOACHIM

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/72 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861

Abstract: A semiconductor element comprises a body (100) with two sides (101,102) and an edge region (120) between the edge (103) and inner zone (110). A doped zone (11) in the inner zone extends to the edge zone and contacts an oppositely doped zone (21). A weakly doped transition zone (12) between inner and edge zones extends further into the body.

公开(公告)号：DE102007041124B4

公开(公告)日：2009-06-04

申请号：DE102007041124

申请日：2007-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L21/332

Abstract: A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J.K-1.m-2 at each point.

公开(公告)号：DE102006007093A1

公开(公告)日：2007-08-23

申请号：DE102006007093

申请日：2006-02-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER ,  PIKORZ DIRK

IPC: H01L21/56 ,  H01L23/28 ,  H01L29/739 ,  H01L29/78

Abstract: The method involves clearing away a thin layer near the surface within the range of the surface (101) of the semiconductor body (100), which is coated, by sputtering. A layer is applied on the latter surface, within which the layer near the surface was cleared away. The layer is an amorphous carbon layer or an amorphous semiconductor layer.

公开(公告)号：DE102005037573A1

公开(公告)日：2007-03-15

申请号：DE102005037573

申请日：2005-08-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER

IPC: H01L29/74 ,  H01L21/332 ,  H01L23/62 ,  H01L27/082 ,  H01L31/111 ,  H03K17/72

Abstract: A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).

公开(公告)号：DE102004045768B4

公开(公告)日：2007-01-04

申请号：DE102004045768

申请日：2004-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  FALCK ELMAR ,  BARTHELMESS REINER

IPC: H01L29/06 ,  H01L21/328 ,  H01L29/74 ,  H01L29/861

公开(公告)号：DE102005021302A1

公开(公告)日：2006-11-23

申请号：DE102005021302

申请日：2005-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  SCHULZE HANS-JOACHIM ,  BARTHELMESS REINER

IPC: H01L21/263 ,  H01L21/324 ,  H01L29/30 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861

Abstract: The method involves irradiating a semiconductor body with particles over one of surfaces (101, 102) of the body, so that defects are produced in the semiconductor body, where the particles are electrons, protons and helium ions. One of the areas of the semiconductor body is heated with laser light on a temperature more than 400 degree Celsius by irradiating the surface of the semiconductor body to heal the defects in the surface.