中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

47 records (took 0.025 seconds)

    Semiconductor component having channel blocking zone
    1.
    发明专利
    Semiconductor component having channel blocking zone 审中-公开
    具有通道阻塞区的半导体元件

    公开(公告)号：JP2007036221A

    公开(公告)日：2007-02-08

    申请号：JP2006188117

    申请日：2006-07-07

    Applicant: Infineon Technologies Ag ,  インフィネオン テクノロジーズ アクチエンゲゼルシャフト

    Inventor： BARTHELMESS REINER ,  SCHULZE HANS-JOACHIM

    IPC: H01L29/861 ,  H01L21/336 ,  H01L29/06 ,  H01L29/739 ,  H01L29/78

    CPC classification number: H01L29/66325 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/66136 ,  H01L29/7395 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor component provided with a channel blocking zone having a high electrostatic blocking performance and a high endurance against dynamic operations. SOLUTION: The semiconductor component has a first surface 101 and a second surface 102 and is configured such that between the first and second surfaces, an inner region 103 and an edge region 104 are arranged and a semiconductor substrate 100 is provided; in the inner region 103 in the zone of the first surface 101, is formed at least one active component 12 doped complementarily to a reference doping, while in the edge region 104 in the zone of the first surface 101, is formed a channel blocking zone 20 doped in the same conductivity type as the reference doping but more heavily than the reference doping; and the doping concentration of the channel blocking zone 20 decreases in the distance (d1) in excess of at least 10 μm as viewed in a cross-section taken lateral at least to the active component 12. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供一种设置有具有高静电阻挡性能和对动态操作的高耐久性的通道阻挡区域的半导体部件。 解决方案：半导体部件具有第一表面101和第二表面102，并且被配置为使得在第一表面和第二表面之间布置有内部区域103和边缘区域104，并且设置半导体衬底100; 在第一表面101的区域中的内部区域103中形成有至少一个与参考掺杂互补掺杂的有源元件12，而在第一表面101的区域中的边缘区域104中形成有沟道阻挡区 20掺杂在与参考掺杂相同的导电类型，但比参考掺杂更重; 并且在横截面中观察至少至少为活性组分12时，通道阻挡区20的掺杂浓度在距离（d1）超过至少10μm的范围内减小。（C）2007 ，JPO＆INPIT

    METHOD FOR MANUFACTURING BLOCKING ZONE IN SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR COMPONENT HAVING THE BLOCKING ZONE
    2.
    发明专利
    METHOD FOR MANUFACTURING BLOCKING ZONE IN SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR COMPONENT HAVING THE BLOCKING ZONE 审中-公开

    公开(公告)号：JP2006344977A

    公开(公告)日：2006-12-21

    申请号：JP2006159824

    申请日：2006-06-08

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： BARTHELMESS REINER ,  MAUDER ANTON ,  NIEDERNOSTHEIDE FRANZ JOSEF ,  SCHULZE HANS-JOACHIM

    IPC: H01L21/265 ,  H01L21/322 ,  H01L21/329 ,  H01L21/336 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a blocking zone implanted in semiconductors substrates, and a semiconductor component having the blocking zone. SOLUTION: This method for manufacturing a blocking zone implanted in semiconductors substrates comprises the process of the step of preparing a semiconductor substrate (100) having a first and second surfaces (101, 102), and a basic doping of a first conduction type; the step of irradiating protons onto either side of a first and second surfaces (101, 102) of the semiconductor substrate (100), so that the protons can be introduced in a first region (111) disposed at apart from the first surface (the irradiation surface) (101) of the semiconductor substrate (100); and the step of generating hydrogen-induced donors both in a first region (111), and in a second region adjacent to the first region (111) across the irradiation surface (101) by heat treating the semiconductor substrate (100) at a predetermined heating temperature for a predetermined heating time. COPYRIGHT: (C)2007,JPO&INPIT

    9.
    发明专利
    未知

    公开(公告)号：DE102005063332B4

    公开(公告)日：2009-04-02

    申请号：DE102005063332

    申请日：2005-05-24

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

    IPC: H01L29/861 ,  H01L21/329

    Abstract: Starting from semiconductor body (1) rear side (12) there is sequence of strongly (8) and weakly (7) doped N-zones and weakly doped P-zone (6) with PN-load junction (4) between weakly doped N- and P-zones.Orthogonally to vertical direction are spaced, strongly P-doped islands (54-57) extending into weakly P-doped zone. In weakly P-doped zone is fitted spaced further zone (91-97) whose charge carrier service life is reduced. Independent claims are included fo rmethod of forming high speed diode.

    10.
    发明专利
    未知

    公开(公告)号：DE102007001108A1

    公开(公告)日：2008-07-10

    申请号：DE102007001108

    申请日：2007-01-04

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  BARTHELMESS REINER

    IPC: H01L29/861 ,  H01L21/329

    Abstract: A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

Patent Agency Ranking