公开(公告)号：DE10038378A1

公开(公告)日：2002-02-28

申请号：DE10038378

申请日：2000-08-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTSCHE MARTIN ,  GSCHWANDTNER ALEXANDER

IPC: H01L21/02 ,  H01L21/8242

公开(公告)号：DE10027914A1

公开(公告)日：2001-12-13

申请号：DE10027914

申请日：2000-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DAHL CLAUS ,  ROBL WERNER ,  ROEHNER MICHAEL ,  GSCHWANDTNER ALEXANDER ,  JURK REINHARD ,  THEWES ROLAND

IPC: H01L23/00 ,  H01L23/532 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L21/336

Abstract: The invention relates to a component with a transistor and method for production thereof. According to the invention, the cut-off voltage drift of PMOS transistors may be reduced, whereby a getter layer (14) with a thickness of at least 40 nm is provided in conductor tracks above the PMOS transistor.