公开(公告)号：DE10355588A1

公开(公告)日：2005-06-30

申请号：DE10355588

申请日：2003-11-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  PERI HERMANN ,  KOTZ DIETMAR

IPC: H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

公开(公告)号：DE10341793A1

公开(公告)日：2005-04-21

申请号：DE10341793

申请日：2003-09-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  HIRLER FRANZ ,  KOTZ DIETMAR

IPC: H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/78 ,  H01L21/336

Abstract: The semiconductor component has a trough structure arrangement (10) formed in a semiconductor region or chip, for providing a cell field (Z) with a number of strip-shaped trench structures (30) for trench field effect transistors having gate electrode regions (G) within the trench structures and source regions (S), body regions (B) and body contact regions (Bk) between the trench structures. A lateral end region (30e) of each trench structure is enclosed by a modified doping region, for provision of a field plate region. An independent claim for a manufacturing method for a semiconductor component is also included.