公开(公告)号：DE10353798A1

公开(公告)日：2005-06-23

申请号：DE10353798

申请日：2003-11-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G06F17/00 ,  G06F17/50 ,  G21K5/00

Abstract: A method for producing a final mask layout avoids imaging errors. A provisional auxiliary mask layout that has been produced in accordance with a predetermined electrical circuit diagram is converted into the final mask layer with the aid of an OPC method. Before the OPC method is carried out, a modified auxiliary mask layout is formed with the provisional auxiliary mask layout by a procedure in which, in a first modification step, the mask structures of the provisional auxiliary mask layout are enlarged or reduced in size to form altered mask structures in accordance with a predetermined set of rules. Then the altered mask structures are supplemented, in accordance with predetermined positioning rules, by optically non-resolvable auxiliary structures to form the modified auxiliary mask layout. The mask layout is produced by the OPC method using the modified auxiliary mask layout.

公开(公告)号：DE10131187C2

公开(公告)日：2003-06-18

申请号：DE10131187

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKE THORSTEN ,  VERBEEK MARTIN ,  SEMMLER ARMIN ,  HAFFNER HENNING

IPC: G03F1/00

公开(公告)号：DE10044257A1

公开(公告)日：2002-04-11

申请号：DE10044257

申请日：2000-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  HAFFNER HENNING ,  FRIEDRICH CHRISTOPH

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/66 ,  G03F3/10

Abstract: The method involves defining original data specifying an original layout and automatically computing new layout data similar to the original layout in terms of the geometry of a mask generated from the original data. The new data are computed based on rules related to deviations in layout geometry from a mask manufactured from this layout or modeled from the layout by following steps of a manufacturing process. The method involves predefining original data (12) specifying an original layout (10) and automatically computing new data (54) specifying a new layout (42) from the original data, whereby the new layout is similar to the original layout in terms of the geometry of a mask (22) generated from the original data. The new data are computed based on rules related to deviations in the geometry of a layout from a mask manufactured from this layout or modeled from the layout by following the steps of the manufacturing process. Independent claims are also included for the following: an arrangement for generating mask layout data, especially a data processing system, a program with a command sequence for implementation by a data processing system and an integrated circuit structure.