-
公开(公告)号：JP2002140381A
公开(公告)日：2002-05-17
申请号：JP2001271402
申请日：2001-09-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SEMMLER ARMIN , HAFFNER HENNING , FRIEDRICH CHRISTOPH
Abstract: PROBLEM TO BE SOLVED: To provide a simple method for generating mask layout data for a lithography mask which keeps a new layout very similar to a mask manufactured by using original data at a low cost. SOLUTION: The method for generating the mask layout data for, specially, lithography simulation is described. The original data (12) defining an original layout (10) are prescribed. New data (54) are automatically computed (34) according to the original data. The new data (54) are computed (34) from the mask manufactured according to the layout according to a rule based upon the deviation of the layout shape (38, 40). This procedure is followed to evade complicated simulation at a method stage of a manufacturing process.
-
公开(公告)号：WO0140868A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004136
申请日：2000-11-22
Applicant: INFINEON TECHNOLOGIES AG , FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD , PFORR RAINER
Inventor： FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD , PFORR RAINER
IPC: G03F1/30 , G03F1/00 , H01L21/027
CPC classification number: G03F1/30
Abstract: The invention relates to an alternating phase mask (1) having a branched structure consisting of two opaque segments. Two transparent surfaces segments (5a, 5b) are arranged on both sides of said segments or the components thereof respectively. The surface segments are provided with phases that are displaced by 180 DEG +/- DELTA alpha , whereby DELTA alpha is not more than 25 DEG . The surface segments (5a, 5b) are separated by at least one transparent surface boundary segment (6) whose phase is situated between the phases of the adjacent surface segments (5a, 5b).
Abstract translation: 本发明涉及具有由两个不透明段组成的分支结构的交替相位掩模（1）。 在部分或其部分的两侧上布置两个透明表面部分（5a，5b），其具有相移180°+/-Δα的相位，其中Δα最大值为25°。 表面部分（5a，5b）由至少一个透明表面边界部分（6）分开，其相位位于相邻表面部分（5a，5b）的相位之间。
-
公开(公告)号：DE10006952A1
公开(公告)日：2001-08-30
申请号：DE10006952
申请日：2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
Abstract: Mask set comprises a first chrome-less phase mask (1) for producing exposed and non-exposed regions on a photolaquer in a minimal structure and a second mask (2) for dividing the non-exposed regions by exposing partial regions of the regions non-exposed by the first phase mask. An Independent claim is also claimed for a process for producing structures acting as resist masks (3). Preferred Features: The second mask is a chrome-on-glass mask or a halftone mask. The exposed and non-exposed regions produced by the first mask are formed in straight lines. Both masks each have a number of individual structures.
-
公开(公告)号：DE50006747D1
公开(公告)日：2004-07-15
申请号：DE50006747
申请日：2000-11-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , FRIEDRICH CHRISTOPH , FUELBER DR , KAESMAIER RAINER , WIDMANN DR
Abstract: Layers are patterned with a lithography method during the fabrication of integrated circuits. A mask, which may be reflective or transmissive, for carrying out the method. The photosensitive layers are exposed to radiation that is emitted by a radiation source. The radiation lies in the extreme ultraviolet region and is guided via the mask onto the photosensitive layers.
-
公开(公告)号：DE19957542A1
公开(公告)日：2001-07-05
申请号：DE19957542
申请日：1999-11-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PFORR RAINER , FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD
IPC: G03F1/30 , G03F1/00 , H01L21/027 , G03F1/14
Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.
-
Patent Agency Ranking
公开(公告)号：DE19958201A1
公开(公告)日：2001-06-21
申请号：DE19958201
申请日：1999-12-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： CZECH GUENTHER , FRIEDRICH CHRISTOPH , FUELBER CARSTEN , KAESMAIER RAINER , WIDMANN DIETRICH
IPC: G03F1/00 , G03F1/14 , G03F7/20 , H01L21/768
Abstract: Lithographic process for structuring layers during the manufacture of integrated circuits comprises guiding radiation emitted by a radiation source and lying in the extreme UV range onto photosensitive layers via a mask (11). An Independent claim is also included for a mask for carrying out the process. Preferred Features: The radiation source emits radiation in the wavelength range of 11-14 nm. The source is a xenon-plasma source. The mask is a reflection mask, transmission mask or binary mask. The mask has a transparent carrier layer (13) formed by a first silicon layer. Second silicon layers forming opaque regions (14) are applied to the carrier layer.
-
公开(公告)号：DE59912166D1
公开(公告)日：2005-07-14
申请号：DE59912166
申请日：1999-09-17
Applicant: INFINEON TECHNOLOGIES AG
Inventor： GRASSMANN ANDREAS , FRIEDRICH CHRISTOPH , GRIESINGER UWE , PFORR RAINER , WIDMANN DIETRICH
Abstract: The invention relates to a phase shift mask for lithographically producing small structures at the limit of a resolution that is predetermined by the wavelength of the exposure radiation. The phase shift mask has first regions A and second regions B that effect a phase-shift relative to the first regions. The second regions are arranged beside the first regions for producing a sudden phase shift along the boundaries between the first and the second regions. Individual first regions touch one another via corners at points, at which the second regions also touch one another via corners. The result is that the boundaries between first and second regions merge at these points and these points are opaque to the radiation. The invention makes it possible to expose extremely small contact holes with just a single exposure and thus leads to a reduction of costs in the fabrication of integrated semiconductor circuits.
-
公开(公告)号：DE10006952C2
公开(公告)日：2002-05-16
申请号：DE10006952
申请日：2000-02-16
Applicant: INFINEON TECHNOLOGIES AG
Inventor： FRIEDRICH CHRISTOPH , GRIESINGER UWE , GANS FRITZ , ERGENZINGER KLAUS , MAURER WILHELM , PFORR RAINER , KNOBLOCH JUERGEN , WIDMANN DIETRICH , CZECH GUENTHER , FUELBER CARSEN
-
公开(公告)号：DE10044257A1
公开(公告)日：2002-04-11
申请号：DE10044257
申请日：2000-09-07
Applicant: INFINEON TECHNOLOGIES AG
Inventor： SEMMLER ARMIN , HAFFNER HENNING , FRIEDRICH CHRISTOPH
Abstract: The method involves defining original data specifying an original layout and automatically computing new layout data similar to the original layout in terms of the geometry of a mask generated from the original data. The new data are computed based on rules related to deviations in layout geometry from a mask manufactured from this layout or modeled from the layout by following steps of a manufacturing process. The method involves predefining original data (12) specifying an original layout (10) and automatically computing new data (54) specifying a new layout (42) from the original data, whereby the new layout is similar to the original layout in terms of the geometry of a mask (22) generated from the original data. The new data are computed based on rules related to deviations in the geometry of a layout from a mask manufactured from this layout or modeled from the layout by following the steps of the manufacturing process. Independent claims are also included for the following: an arrangement for generating mask layout data, especially a data processing system, a program with a command sequence for implementation by a data processing system and an integrated circuit structure.
-
公开(公告)号：DE19957542C2
公开(公告)日：2002-01-10
申请号：DE19957542
申请日：1999-11-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： PFORR RAINER , FRIEDRICH CHRISTOPH , HEISSMEIER MICHAEL , MOUKARA MOLELA , GRIESINGER UWE , LUDWIG BURKHARD
IPC: G03F1/30 , G03F1/00 , H01L21/027 , G03F1/14
Abstract: An alternating phase mask having a branched structure containing two opaque segments is described. Two transparent surface segments are disposed on both sides of the segments or the components thereof, respectively. The surface segments are provided with phases that are displaced by 180°±Delta alpha, whereby Delta alpha a is not more than 25°. The surface segments are separated by at least one transparent surface boundary segment whose phase is situated between the phases of the adjacent surface segments.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.021 seconds)
