公开(公告)号：JP2002140381A

公开(公告)日：2002-05-17

申请号：JP2001271402

申请日：2001-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  HAFFNER HENNING ,  FRIEDRICH CHRISTOPH

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/66 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a simple method for generating mask layout data for a lithography mask which keeps a new layout very similar to a mask manufactured by using original data at a low cost. SOLUTION: The method for generating the mask layout data for, specially, lithography simulation is described. The original data (12) defining an original layout (10) are prescribed. New data (54) are automatically computed (34) according to the original data. The new data (54) are computed (34) from the mask manufactured according to the layout according to a rule based upon the deviation of the layout shape (38, 40). This procedure is followed to evade complicated simulation at a method stage of a manufacturing process.

公开(公告)号：DE10133127C2

公开(公告)日：2003-06-26

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

公开(公告)号：DE10164306A1

公开(公告)日：2003-07-17

申请号：DE10164306

申请日：2001-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  SEMMLER ARMIN ,  CZECH GUENTHER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F7/00

Abstract: A method for structuring photoresists, in which a photoresist is prepared on a substrate and undergoes a first exposure, in which the photoresist is exposed with a first photomask which images a main structure and an auxiliary structure which improves imaging of the main structure formed on the photoresist, so that a chemical differentiation of the photoresist between the exposed and unexposed zones results. Subsequently a second exposure with a second photomask is carried out, which displays the imaging auxiliary structure on the photoresist and the main structure is not imaged on the photoresist, such that only in the displayed sections of the imaging auxiliary structure does a chemical modification of the photoresist result, and the photoresist is developed with a developer such that only the main structure remains on the substrate. An Independent claim is given for a photomask with a main structure and an auxiliary structure.

公开(公告)号：DE10133127A1

公开(公告)日：2003-01-30

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00

Abstract: Process for calculating or manufacturing a mask (4) for producing a structured mask (6) or structure (2) of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure. A nominal value for at least one parameter is given for the structured mask and/or structure. The mask is calculated in such a way that the structured mask and/or structure contain a prescribed value region based on the parameter. The value region is directed asymmetrically to the nominal value of the parameter. A larger deviation of the value of the parameter from the nominal value is established in a small critical value direction for the quality or function of the structured mask and/or structure than in a critical value direction. Preferred Features: The mask is an exposure mask (4) which prepares an etching mask according to a photolithographic process.

公开(公告)号：DE10131187A1

公开(公告)日：2003-01-30

申请号：DE10131187

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKE THORSTEN ,  VERBEEK MARTIN ,  SEMMLER ARMIN ,  HAFFNER HENNING

IPC: G03F1/00

公开(公告)号：DE10164306B4

公开(公告)日：2006-06-08

申请号：DE10164306

申请日：2001-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： NOELSCHER CHRISTOPH ,  SEMMLER ARMIN ,  CZECH GUENTHER

IPC: G03F7/20 ,  G03F1/00 ,  G03F1/36 ,  G03F7/00

公开(公告)号：DE10356693A1

公开(公告)日：2005-07-14

申请号：DE10356693

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  THIELE JOERG ,  MEYNE CHRISTIAN ,  BODENDORF CHRISTOF

IPC: G03F1/00 ,  G06F17/50

Abstract: A method for producing for a mask a mask layout which avoids aberrations in which a provisional auxiliary mask layout produced, in particular in accordance with a prescribed electrical circuit diagram is converted into the mask layout with the aid of an OPC method. At least two different OPC variants are used in the course of the OPC method by subdividing the original auxiliary mask layout into at least two layout areas and processing each of the layout areas in accordance with one of the at least two OPC variants.

公开(公告)号：DE102005002529A1

公开(公告)日：2006-07-27

申请号：DE102005002529

申请日：2005-01-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYNE CHRISTIAN ,  SEMMLER ARMIN ,  NASH EVA

IPC: G03F1/00 ,  G03F1/36

Abstract: The method involves converting a provisional auxiliary mask layout into a final mask layout by using an optical proximity correction (OPC) method. Main structures of the auxiliary mask layout are arranged in area of a section in a direction and are associated to an optically not resolvable auxiliary structure (140) that is arranged adjacent to the section in other different direction that runs transverse to the former direction.

公开(公告)号：DE102005005591B3

公开(公告)日：2006-07-20

申请号：DE102005005591

申请日：2005-02-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  MEYER DIRK ,  KOEHLE RODERICK ,  NOELSCHER CHRISTOPH ,  HEISMEIER MICHAEL ,  THIELE JOERG ,  LUDWIG BURKHARD

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20

Abstract: The method involves dividing a pattern of a circuit design iteratively, into corresponding base patterns, to classify the parts of the pattern into the structural components which complies with the base patterns. Further base patterns are provided for the parts which are not classified. The geometries of the structural components are optimized and the optimized base patterns are inserted into the circuit design. An independent claim is also included for a use of a structural component geometry optimizing method for the production of a photomask.

公开(公告)号：DE102004047263A1

公开(公告)日：2006-03-30

申请号：DE102004047263

申请日：2004-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN

IPC: G03F7/20

Abstract: A final mask layout ( 20 ') is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout ( 20 ') with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout ( 100 ), firstly a modified auxiliary mask layout ( 100 ') is formed by arranging at least one optically non-resolvable auxiliary structure ( 130 ) between two mask structures ( 110, 120 ) of the provisional auxiliary mask layout ( 100 ). The optically non-resolvable auxiliary structure ( 130 ) is positioned between the two mask structures ( 110, 120 ) in a manner dependent on the structure size (B 1 , B 2 ) of the two mask structures, ( 110, 120 ). An eccentric offset (V) of the optically non-resolvable auxiliary structure ( 130 ) between the two mask structures is effected in the case of differing structure sizes (DeltaB) of the two mask structures.