公开(公告)号：DE10355508B4

公开(公告)日：2006-07-06

申请号：DE10355508

申请日：2003-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  SGOURIDIS SOKRATIS ,  MUELLER DIRK

IPC: H01L23/48 ,  H01L21/60 ,  H01L23/00 ,  H01L23/485 ,  H01L23/525

Abstract: The invention relates to an ultrathin semiconductor circuit having contact bumps and to a corresponding production method. The semiconductor circuit includes a bump supporting layer having a supporting layer thickness and having a supporting layer opening for uncovering a contact layer element being formed on the surface of a semiconductor circuit. An electrode layer is situated on the surface of the contact layer element within the opening of the bump supporting layer, on which electrode layer is formed a bump metallization for realizing the contact bump. On account of the bump supporting layer, a thickness of the semiconductor circuit can be thinned to well below 300 micrometers, with the wafer reliably being prevented from breaking. Furthermore, the moisture barrier properties of the semiconductor circuit are thereby improved.

公开(公告)号：DE102004023405A1

公开(公告)日：2005-12-15

申请号：DE102004023405

申请日：2004-05-12

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KROENER FRIEDRICH ,  SCHULZE HOLGER ,  SGOURIDIS SOKRATIS

IPC: H01L21/00 ,  H01L21/304 ,  H01L21/68 ,  H01L21/78 ,  H01L29/06 ,  H01L29/74

Abstract: The method involves fixing a carrier wafer (6) with a binder (5) onto the front of a product wafer (1), and thinning the product wafer from its rear side to a final thickness (d1). Back side processing is performed on the thinned wafer. Separating trenches (12) are formed between the integrated circuits in a saw guide region of the product wafer to form individual components. The carrier wafer is removed with the attached components and ribs engaging in the separating trenches. The carrier wafer and binder are released from the individual components. An independent claim is included for a holding device.