公开(公告)号：DE102009001028B4

公开(公告)日：2011-02-17

申请号：DE102009001028

申请日：2009-02-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROTH ROMAN ,  SIEPE DIRK

IPC: H01R4/02 ,  H01L21/607 ,  H01R43/02

公开(公告)号：DE102006052202B3

公开(公告)日：2008-02-21

申请号：DE102006052202

申请日：2006-11-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GUTT THOMAS ,  SIEPE DIRK ,  LASKA THOMAS ,  MELZL MICHAEL ,  STECHER MATTHIAS ,  ROTH ROMAN

IPC: H01L23/485 ,  H01L21/28 ,  H01L21/60 ,  H01L23/52

Abstract: The component has a metal layer (1) comprising a coherent section. The other metal layer (2) is arranged on the coherent section of the former metal layer. The latter metal is harder than the former metal. The latter metal layer is structured between two layered regions (2a,2b) arranged on the coherent section of the former metal layer. The latter metal comprises boron or phosphorous containing metal and boron or phosphorous containing metal alloy. Independent claims are also included for the following: (1) a contact element comprising a layer pile with a continuous sub-area of a metallization layer of a semiconductor component (2) a method for producing a semiconductor component.

公开(公告)号：DE102005012992A1

公开(公告)日：2006-10-05

申请号：DE102005012992

申请日：2005-03-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SIEPE DIRK ,  BAYERER REINHOLD ,  LENNIGER ANDREAS

IPC: H01L21/607 ,  H01L21/66

Abstract: The invention relates to a method and also a device and a system for bonding a semiconductor element (4), in which various contact areas (8) of the semiconductor element (4) are successively connected to terminal areas (2, 3, 7) by means of bonding wire elements (6) and in which an electrical variable influenced by the semiconductor element (4) is acquired during the bonding operation.