公开(公告)号：DE102008054094A1

公开(公告)日：2010-05-20

申请号：DE102008054094

申请日：2008-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMESS REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/06 ,  H01L23/60 ,  H01L29/74

Abstract: The semiconductor element has a semiconductor body (1), in which a semiconductor zone is formed by a single cable type. The semiconductor zone has resistance structure (64) with two sections (21,81), where a third section is formed between the former and latter section. The third section (20) has a net dopant concentration (P), which is smaller than net dopant concentration (P plus) of the former section (21) and greater than net dopant concentration (P minus) of latter section (81).

公开(公告)号：DE102008051403A1

公开(公告)日：2010-05-12

申请号：DE102008051403

申请日：2008-10-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  BARTHELMES REINER ,  SILBER DIETER ,  CHUKALURI ESWAR

IPC: H01L29/74 ,  H01L21/332 ,  H01L27/06

Abstract: The thyristor arrangement has a semiconductor body (1), where a p-dopped emitter (8) and n-dopped basis (7) are arranged in a vertical direction (v) between a back side (14) and a front side (13). An ignition area (ZB) is provided, where an ignition stage (AG1) has n-dopped ignition stage emitter (51). An electric coupling element is formed as polysilizium layer and is arranged on a semiconductor element, where a section (101) of a semiconductor element is a section of a p-doped basis (6) and is arranged in the lateral direction between the ignition area and the ignition stage. An independent claim is included for a method for operating a thyristor arrangement.

公开(公告)号：DE102005023479A1

公开(公告)日：2006-11-23

申请号：DE102005023479

申请日：2005-05-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  KELLNER-WERDEHAUSEN UWE ,  SILBER DIETER

IPC: H01L29/74

Abstract: A thyristor with a semiconductor body comprises p-emitter (8), n-base (7), p-base (6) and n-emitter (5) vertically one above the other with inner (2) and outer (3) body regions. The p-emitter and n- and p- bases form a transistor with a laterally dependent amplification factor. This factor in the inner region has a minimum that is smaller than the factor in at least a neighboring part of the outer region.

公开(公告)号：DE10159851B4

公开(公告)日：2006-05-24

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L25/07 ,  H01L23/58 ,  H01L23/66 ,  H02M7/00

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.