公开(公告)号：US20150318356A1

公开(公告)日：2015-11-05

申请号：US14651980

申请日：2014-03-18

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Kunpeng JIA ,  Yajuan SU ,  Huilong ZHU ,  Chao ZHAO

IPC: H01L29/16 ,  H01L29/167 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L29/45 ,  H01L21/04 ,  H01L21/426 ,  H01L21/441 ,  H01L21/477 ,  H01L29/24 ,  H01L21/283

CPC classification number: H01L29/1606 ,  H01L21/0415 ,  H01L21/043 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/283 ,  H01L21/28512 ,  H01L21/28568 ,  H01L21/324 ,  H01L21/426 ,  H01L21/441 ,  H01L21/477 ,  H01L29/16 ,  H01L29/167 ,  H01L29/24 ,  H01L29/45

Abstract: A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.

Abstract translation: 提供了用于降低二维晶体材料的接触电阻的方法和装置。 示例性方法可以包括在二维晶体材料层上形成接触材料层; 进行离子注入; 并进行热退火。

公开(公告)号：US20170294478A1

公开(公告)日：2017-10-12

申请号：US15477191

申请日：2017-04-03

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hushan CUI ,  Jinjuan XIANG ,  Xiaobin HE ,  Tao YANG ,  Junfeng LI ,  Chao ZHAO

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14629 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/02327

Abstract: A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective atomic layer deposition processes, where N=2m, m≧1 and m is a positive integer; and forming a top reflecting layer on the transparent cavity layer. With the method, non-uniformity accumulation due to etching processes in conventional technology is minimized, and the cavity layer can be made of materials which cannot be etched. Mosaic cavity layers having such repeated structures with different heights can be formed by extending one-dimensional ASALD, such as extending in another dimension and forming repeated regions, which can be applied to snapshot hyperspectral image sensors, for example, pixels, and greatly improving performance thereof.

公开(公告)号：US20170104081A1

公开(公告)日：2017-04-13

申请号：US15174720

申请日：2016-06-06

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES ,  Jiangnan University

Inventor： Yuqiang DING ,  Chao ZHAO ,  Jinjuan XIANG

IPC: H01L29/49 ,  C23C16/08 ,  H01L21/28 ,  C23C16/455 ,  H01L29/40 ,  C23C16/18 ,  C23C16/02

CPC classification number: H01L29/4966 ,  C23C16/0209 ,  C23C16/08 ,  C23C16/18 ,  C23C16/45527 ,  H01L21/28088 ,  H01L29/401 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.

公开(公告)号：US20150325662A1

公开(公告)日：2015-11-12

申请号：US14698624

申请日：2015-04-28

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guilei WANG ,  Junfeng LI ,  Jinbiao LIU ,  Chao ZHAO

IPC: H01L29/423 ,  H01L21/285 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/66545 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28556 ,  H01L21/28568 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66613 ,  H01L29/7833 ,  H01L29/7843

Abstract: A method for manufacturing a semiconductor device, comprising: forming a gate trench on a substrate; forming a gate dielectric layer and a metal gate layer thereon in the gate trench; forming a first tungsten (W) layer on a surface of the metal gate layer, and forming a tungsten nitride (WN) blocking layer by injecting nitrogen (N) ions; and filling with W through an atomic layer deposition (ALD) process. The blocking layer prevents ions in the precursors from aggregating on an interface and penetrating into the metal gate layer and the gate dielectric layer. At the same time, adhesion of W is enhanced, a process window of W during planarization is increased, reliability of the device is improved and the gate resistance is further reduced.

Abstract translation: 一种制造半导体器件的方法，包括：在衬底上形成栅极沟槽; 在栅极沟槽中形成栅极电介质层和金属栅极层; 在所述金属栅极层的表面上形成第一钨（W）层，通过注入氮（N）离子形成氮化钨（WN）阻挡层; 并通过原子层沉积（ALD）工艺填充W。 阻挡层防止前体中的离子在界面上聚集并渗入金属栅极层和栅极介电层。 同时，W的附着力增强，在平坦化期间W的工艺窗口增加，器件的可靠性提高，栅极电阻进一步降低。

公开(公告)号：US20150325452A1

公开(公告)日：2015-11-12

申请号：US14647393

申请日：2012-12-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong ZHU ,  Jun LUO ,  Chunlong LI ,  Jian DENG ,  Chao ZHAO

IPC: H01L21/3105 ,  H01L21/265 ,  H01L21/321 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L29/10

CPC classification number: H01L21/76229 ,  H01L21/26513 ,  H01L21/308 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/31105 ,  H01L21/32115 ,  H01L21/32132 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66795 ,  H01L29/6681

Abstract: A planarization process, the process including performing first sputtering on a material layer, with an area of the material layer which has a relatively low loading condition for sputtering shielded by a first shielding layer, removing the first shielding layer, and performing second sputtering on the material layer to planarize the material layer.

Abstract translation: 平面化处理，该方法包括在材料层上进行第一溅射，其中材料层的面积具有相对低的负载条件，用于由第一屏蔽层屏蔽的溅射，去除第一屏蔽层，以及在第二溅射 材料层以平坦化材料层。