公开(公告)号：SG63642A1

公开(公告)日：1999-03-30

申请号：SG1996009694

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHOI CHONGWOOK CHRIS ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

公开(公告)号：FR2733860B1

公开(公告)日：1998-03-13

申请号：FR9605547

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHOI ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687 ,  H02M1/08 ,  H02M3/155 ,  H03K17/00 ,  H01L27/00

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

公开(公告)号：FR2752335A1

公开(公告)日：1998-02-13

申请号：FR9712964

申请日：1997-10-16

Applicant: INT RECTIFIER CORP

Inventor： CHOI CHONGWOOK ,  TAM DAVID C

IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687 ,  H01L27/02

Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

公开(公告)号：ITMI960870A1

公开(公告)日：1997-11-03

申请号：ITMI960870

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687

Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

公开(公告)号：DE19910755B4

公开(公告)日：2007-04-26

申请号：DE19910755

申请日：1999-03-11

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT

IPC: H03K7/08 ,  G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03M1/60

公开(公告)号：AU2003207531A1

公开(公告)日：2003-09-22

申请号：AU2003207531

申请日：2003-01-13

Applicant: INT RECTIFIER CORP

Inventor： TAM DAVID C ,  PAVIER MARK ,  CONNAH GLYN ,  NADD BRUNO C

IPC: H02P7/29 ,  H02M1/00 ,  H02M7/00 ,  H02P29/02 ,  H02M7/5387

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

公开(公告)号：FR2752335B1

公开(公告)日：2003-08-01

申请号：FR9712964

申请日：1997-10-16

Applicant: INT RECTIFIER CORP

Inventor： CHOI CHONGWOOK ,  TAM DAVID C

IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687 ,  H01L27/02

Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

公开(公告)号：DE19910755A1

公开(公告)日：1999-10-28

申请号：DE19910755

申请日：1999-03-11

Applicant: INT RECTIFIER CORP

Inventor： TAKAHASHI TOSHIO ,  TAM DAVID C ,  PARRY JOHN ,  TCHAMDSOU ARISTIDE ,  CHEY CHRISTOPHER C ,  DUBHASHI AJIT

IPC: G01R19/25 ,  H02P20060101 ,  H02P7/00 ,  H02P23/00 ,  H03F3/387 ,  H03K7/08 ,  H03M1/60

Abstract: The circuit converts an analog current sense signal, in a motor drive controller circuit, from a high side reference potential to a low side reference potential for measurement and processing. The circuit comprises a section for converting the input signal, at a first potential, into a pulse width modulated (PWM) signal. A further circuit section is provided for level shifting the pulse width modulated signal from the first potential to a second potential.

公开(公告)号：IT1282404B1

公开(公告)日：1998-03-20

申请号：ITMI960869

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

公开(公告)号：ITMI960869A1

公开(公告)日：1997-11-03

申请号：ITMI960869

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.