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公开(公告)号：EP1839352A4
公开(公告)日：2012-09-19
申请号：EP06700139
申请日：2006-01-12
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HYUN-TAK , YOUN DOO-HYEB , CHAE BYUNG-GYU , KANG KWANG-YONG , KIM BONG-JUN , LEE YONG-WOOK , YUN SUN-JIN , LIM JUNG-WOOK , KIM GYUNG-OCK , MAENG SUNG-LYUL
CPC classification number: H01M2/34 , H01M2/348 , H01M10/052 , H01M10/443 , H01M2200/00 , H01M2200/106
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12.发明公开DEVICE USING ABRUPT METAL-INSULATOR TRANSITION LAYER AND METHOD OF FABRICATING THE DEVICE 审中-公开WITH突变金属 - 绝缘体 - ÜBRGANGSSCHICHT与制造设备的方法的装置
公开(公告)号：EP1825519A4
公开(公告)日：2011-01-05
申请号：EP05821307
申请日：2005-12-05
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： YOUN DOO-HYEB , KIM HYUN-TAK , CHAE BYUNG-GYU , MAENG SUNG-LYUL , KANG KWANG-YONG
CPC classification number: H01L49/003 , H01L29/452
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13.发明公开ABRUPT METAL-INSULATOR TRANSITION WAFER, AND HEAT TREATMENT APPARATUS AND METHOD FOR THE WAFER 审中-公开在突金属 - 绝缘体转变晶片和热处理设备和方法用于晶圆
公开(公告)号：EP1908100A4
公开(公告)日：2010-11-10
申请号：EP06769162
申请日：2006-07-04
Applicant: KOREA ELECTRONICS TELECOMM
Inventor： KIM HYUN-TAK , CHAE BYUNG-GYU , KANG KWANG-YONG , YUN SUN-JIN
IPC: H01L21/687 , H01L21/00 , H01L21/324
CPC classification number: H01L21/324 , H01L21/3245 , H01L21/67103 , H01L21/68728
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