公开(公告)号：AT301303T

公开(公告)日：2005-08-15

申请号：AT02028407

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLAN BRIAN K ,  BARNES MICHAEL ,  KAVEH FARRO F

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：DE69829390D1

公开(公告)日：2005-04-21

申请号：DE69829390

申请日：1998-06-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  NGUYEN HUONG ,  BARNES MICHAEL ,  NI TOM

IPC: C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

公开(公告)号：ES2197633T3

公开(公告)日：2004-01-01

申请号：ES99915129

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN K ,  KAVEH FARRO F ,  BARNES MICHAEL

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：AT240544T

公开(公告)日：2003-05-15

申请号：AT99915129

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN K ,  KAVEH FARRO F ,  BARNES MICHAEL

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：DE69523940D1

公开(公告)日：2001-12-20

申请号：DE69523940

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL ,  BENJAMIN NEIL ,  HOLLAND JOHN ,  BEER RICHARD ,  VELTROP ROBERT

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：CA2523264A1

公开(公告)日：1996-06-13

申请号：CA2523264

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： VELTROP ROBERT ,  BARNES MICHAEL ,  BEER RICHARD ,  BENJAMIN NEIL ,  HOLLAND JOHN

IPC: H05H1/46

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.

公开(公告)号：AT449419T

公开(公告)日：2009-12-15

申请号：AT97943648

申请日：1997-09-30

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

IPC: H01L21/68 ,  H01L21/683

Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

公开(公告)号：CA2206679C

公开(公告)日：2007-09-11

申请号：CA2206679

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BENJAMIN NEIL ,  BARNES MICHAEL ,  BEER RICHARD ,  VELTROP ROBERT ,  HOLLAND JOHN

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber t o excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each includin g an element connected in parallel with an element of another segment.

公开(公告)号：DE69907890T2

公开(公告)日：2004-02-19

申请号：DE69907890

申请日：1999-03-30

Applicant: LAM RES CORP

Inventor： MCMILLIN K ,  KAVEH FARRO F ,  BARNES MICHAEL

IPC: G05D16/20

Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

公开(公告)号：ES2163537T3

公开(公告)日：2002-02-01

申请号：ES95942546

申请日：1995-12-05

Applicant: LAM RES CORP

Inventor： BARNES MICHAEL ,  BENJAMIN NEIL ,  HOLLAND JOHN ,  BEER RICHARD ,  VELTROP ROBERT

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.