Abstract:
A vacuum plasma processor includes a coil for reactively exciting a plasma so plasma incident on a workpiece has substantially uniformity. The coil and a window which reactively couples fields from the coil to the plasma have approximately the same diameter. An r.f. source supplies a pulse amplitude modulated envelope including an r.f. carrier to the coil.
Abstract:
PROBLEM TO BE SOLVED: To provide a high frequency magnetic field excitation plasma arc cutting machine for a large work piece, which uniformly distributes plasma in the whole work piece. SOLUTION: Means for changing a gas into plasma includes a coil (34) arranged to generate and keep plasma by exciting the gas by coupling the high frequency magnetic field with the gas through a dielectric window (19) provided in the wall of a chamber (10). The coil has a first and second terminals (62, 64) connected to a high frequency power source (36, 38) that induce the high frequency magnetic field, and a plurality of winding segments (51 to 58, 59 and 60) electrically connected between the first and second terminals with the same electrical length thereof. The elements (51 to 58) of each segments are provided parallel to the elements (51 to 58) of other segments. COPYRIGHT: (C)2004,JPO&NCIPI
Abstract:
A vacuum plasma processor includes a coil for reactively exciting a plasma so plasma incident on a workpiece has substantially uniformity. The coil and a window which reactively couples fields from the coil to the plasma have approximately the same diameter. An r.f. source supplies a pulse amplitude modulated envelope including an r.f. carrier to the coil.
Abstract:
A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.
Abstract:
A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber t o excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each includin g an element connected in parallel with an element of another segment.
Abstract:
A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.
Abstract:
A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.
Abstract:
A radio frequency (RF) generator system includes first and second RF power sources, each RF power source applying a respective RF signal and second RF signal to a load. The first RF signal is applied in accordance with the application of the second RF signal. The application of the first RF signal is synchronized to application of the second RF signal. The first RF signal may be amplitude modulated in synchronization with the second RF signal, and the amplitude modulation can include blanking of the first RF signal. A frequency offset may be applied to the first RF signal in synchronization with the second RF signal. A variable actuator associated with the first RF power source may be controlled in accordance with the second RF signal.
Abstract:
A vacuum plasma processor for treating a workpiece with an RF plasma has a plasma excitation coil including a peripheral portion supplying a substantial magnetic flux density to peripheral portions of the plasma. Additional conducting segments spatially adjacent to and electrically connected to a segment of the peripheral portion supply additional magnetic flux having a substantial magnetic flux density to the plasma peripheral portions. The additional conductor segments are in each of four corners of the coil, being connected electrically in parallel or series to coil conductor segments forming the corners. In another embodiment, the coil includes several nested conducting corner segments. In different embodiments, the corner segments are (1) coplanar with the remainder of the coil and (2) closer to the plasma than the remainder of the coil. The coil includes two electrically parallel, spiral like windings, each with an interior terminal connected to one output terminal of a matching network and an output terminal connected via a capacitor to another output terminal of the matching network. The capacitor values and the lengths of the windings relative to the plasma RF excitation wavelength are such that current flowing in the coil has maximum and minimum standing wave values in the peripheral and interior coil portions, respectively. The coil and workpiece peripheries have similar rectangular dimensions and geometries.