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    CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS
    1.
    发明申请
    CHAMBER LINER FOR SEMICONDUCTOR PROCESS CHAMBERS 审中-公开
    用于半导体加工室的腔室衬里

    公开(公告)号：WO0019495A3

    公开(公告)日：2000-05-25

    申请号：PCT/US9922488

    申请日：1999-09-28

    Applicant: LAM RES CORP

    Inventor： SCHOEPP ALAN M ,  DENTY WILLIAM M JR ,  BARNES MICHAEL

    IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/00

    CPC classification number: H01J37/32495 ,  Y10S156/916

    Abstract: A chamber liner for use in a semiconductor process chamber and a semiconductor process chamber containing the chamber liner are disclosed. The process chamber includes a housing having an inner surface defining a chamber in which a vacuum is drawn during processing of a semiconductor wafer. The chamber liner (116) has a plasma confinement shield (116c) with a plurality of apertures (116e). An outer sidewall (116b) extends upwardly from the plasma confinement shield (116c). An outer flange (116a) extends outwardly from the outer sidewall (116b) such that the outer flange (116a) extends beyond the chamber and into a space at atmospheric pressure. The chamber liner (116) preferably further includes an inner sidewall (116d) that extends upwardly from the plasma confinement shield (116c). The plasma confinement shield (116c), the inner and outer sidewalls (116d and 116b, respectively), and the outer flange (116a) are preferably integral with one another.

    Abstract translation: 公开了用于半导体处理室和包含室衬的半导体处理室的室衬。 处理室包括壳体，该壳体具有限定腔室的内表面，在处理半导体晶片期间真空被吸入其中。 室衬（116）具有带有多个孔（116e）的等离子约束屏蔽（116c）。 外侧壁（116b）从等离子体约束屏障（116c）向上延伸。 外凸缘（116a）从外侧壁（116b）向外延伸，使得外凸缘（116a）延伸超过腔室并进入大气压力下的空间。 腔室衬垫（116）优选地还包括从等离子体限制护罩（116c）向上延伸的内侧壁（116d）。 等离子体约束屏障（116c），内侧壁和外侧壁（分别为116d和116b）和外凸缘（116a）优选彼此一体化。

    4.
    发明专利
    未知

    公开(公告)号：AT291104T

    公开(公告)日：2005-04-15

    申请号：AT98931773

    申请日：1998-06-30

    Applicant: LAM RES CORP

    Inventor： MCMILLIN BRIAN ,  NGUYEN HUONG ,  BARNES MICHAEL ,  NI TOM

    IPC: C23C16/50 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

    Abstract: A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

    7.
    发明专利
    未知

    公开(公告)号：DE69739660D1

    公开(公告)日：2009-12-31

    申请号：DE69739660

    申请日：1997-09-30

    Applicant: LAM RES CORP

    Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

    IPC: H01L21/68 ,  H01L21/683

    Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

    8.
    发明专利
    未知

    公开(公告)号：DE69926551D1

    公开(公告)日：2005-09-08

    申请号：DE69926551

    申请日：1999-03-30

    Applicant: LAM RES CORP

    Inventor： MCMILLAN BRIAN K ,  BARNES MICHAEL ,  KAVEH FARRO F

    IPC: G05D16/20

    Abstract: A method and apparatus is disclosed for controlling the pressure of a reaction chamber (106) in wafer processing equipment. The disclosed apparatus and method uses a ballast port (150b) for inserting gas into the evacuation system, thereby controlling the pressure in the reaction chamber. The disclosed apparatus and method further uses estimation curves to estimate the desired position of a controlled gate valve (124) which is located between the reaction chamber and turbo pump (126). The disclosed apparatus and method achieves a set point pressure by prepositioning a throttle valve followed by repositioning the throttle valve based on the difference between a measure pressure and the set point pressure using proportional and integral control, wherein enablement of integral control is delayed for a pre-specified period.

    Variable high temperature chuck for high density plasma chemical vapor deposition
    9.
    发明专利
    Variable high temperature chuck for high density plasma chemical vapor deposition 未知

    公开(公告)号：AU4507297A

    公开(公告)日：1998-04-24

    申请号：AU4507297

    申请日：1997-09-30

    Applicant: LAM RES CORP

    Inventor： MCMILLIN BRIAN ,  BARNES MICHAEL ,  BERNEY BUTCH ,  NGUYEN HUONG

    IPC: H01L21/68 ,  H01L21/683

    Abstract: An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.

    10.
    发明专利
    未知

    公开(公告)号：DE69829390T2

    公开(公告)日：2006-04-13

    申请号：DE69829390

    申请日：1998-06-30

    Applicant: LAM RES CORP

    Inventor： MCMILLIN BRIAN ,  NGUYEN HUONG ,  BARNES MICHAEL ,  NI TOM

    IPC: C23C16/44 ,  C23C16/50 ,  C23C16/455 ,  C23C16/507 ,  C30B25/10 ,  C30B25/14 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

    Abstract: A plasma processing system for plasma processing of substrates such as semiconductor wafers. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas supply comprising one or more injector tubes extending rectilinearly in the plasma processing chamber and having one or more orifices in a sidewall for supplying gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The gas is supplied through orifices located outside of regions at the distal tip of the injector tubes where electric field lines are concentrated. The arrangement minimizes clogging of the orifices since the orifices are located away from areas where most build-up of process byproducts occur on the injector tube.

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