公开(公告)号：AU2443901A

公开(公告)日：2001-07-03

申请号：AU2443901

申请日：2000-12-19

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  COLLISON WENLI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/66

Abstract: Methods for detecting the endpoint of a photoresist stripping process provide O for reaction with the photoresist for a wafer to be stripped of photoresist. NO is also supplied for reaction with O not reacted with the photoresist. After substantially all the photoresist is stripped from the wafer, the rate of a reaction of O and NO to form NO 2 increases, which increases the intensity of emitted light. An operation of detecting this increase in light intensity signals the endpoint of the photoresist stripping process.

公开(公告)号：DE60045815D1

公开(公告)日：2011-05-19

申请号：DE60045815

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  COLLISON WENLI ,  HOLLAND JOHN P

IPC: H01J37/32 ,  H01F5/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

公开(公告)号：DE60142685D1

公开(公告)日：2010-09-09

申请号：DE60142685

申请日：2001-03-16

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

IPC: H01L21/3213 ,  H05H1/46 ,  H01J37/32 ,  H01L21/3065

公开(公告)号：DE60037805D1

公开(公告)日：2008-03-06

申请号：DE60037805

申请日：2000-03-30

Applicant: LAM RES CORP

Inventor： NI TUQUIANG ,  COLLISON WENLI

IPC: H01L21/00 ,  H01L21/302 ,  G01B11/00 ,  G02B7/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/31

Abstract: An apparatus is provided including a semiconductor processing chamber enclosed by a plurality of walls. Also included is a source of process gas that is required for processing a wafer within the processing chamber. Mounted on one of the walls of the processing chamber is a window. An inlet is positioned adjacent to the window and remains in communication with the processing chamber. The inlet is further coupled to the source of process gas to channel the process gas into the processing chamber for both preventing the deposition of byproducts on the window and further processing the wafer within the processing chamber. In another embodiment, a source of light, an analysis mechanism, and an optical transmission medium are provided. Such optical transmission medium is coupled between the source of light and the analysis mechanism and is further aligned with the window for directing light into the processing chamber and analyzing the wafer within the processing chamber. The window is configured to reflect the light received from the optical transmission medium at an angle so as to not interfere with light reflected from the wafer within the processing chamber.

公开(公告)号：AU2003297165A1

公开(公告)日：2004-07-22

申请号：AU2003297165

申请日：2003-12-17

Applicant: LAM RES CORP

Inventor： COLLISON WENLI ,  NI TUQIANG

IPC: C23C16/00 ,  H01J37/32 ,  H01L21/3065

Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.