公开(公告)号：WO2012154764A3

公开(公告)日：2013-01-10

申请号：PCT/US2012036981

申请日：2012-05-09

Applicant: LAM RES CORP ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

Inventor： WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J ,  XU QING ,  HEO SEONGJUN ,  HAM JIN HWAN ,  YOON SANG JOON ,  RUSU CAMELIA

IPC: B81C1/00 ,  C23F1/00 ,  H01L21/302

CPC classification number: H01L21/30655 ,  B81C1/00619 ,  B81C2201/0112 ,  H01L21/3086

Abstract: A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

Abstract translation: 提供了一种用于在等离子体处理室中蚀刻硅的方法，其具有工作压力和工作偏压。 该方法包括：在硅中执行第一垂直蚀刻以产生具有第一深度和侧壁的孔; 在侧壁上进行保护层的沉积; 执行第二垂直蚀刻以将所述孔加深到第二深度并产生第二侧壁，所述第二侧壁包括第一槽，第二槽和峰，所述第一槽对应于所述第一侧壁，所述第二槽对应于 第二侧壁，该峰设置在第一槽和第二槽之间; 并进行第三次蚀刻以降低峰值。

公开(公告)号：WO0203763A3

公开(公告)日：2002-12-27

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 在相同或几何形状相同的真空等离子体处理室中处理200mm和300mm晶片。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过经由腔室顶部的电介质窗口向等离子体供应电磁场而将腔室中的可电离气体激发成等离子体。 两个线圈都包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈都包括四匝，r.f. 励磁被施加到最靠近线圈中心点的转弯处。 离中心点第三远的转弯在用于200毫米晶圆的线圈中是不对称的。 最接近线圈中心点的两匝在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO2012170302A3

公开(公告)日：2013-02-07

申请号：PCT/US2012040523

申请日：2012-06-01

Applicant: LAM RES CORP ,  XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

Inventor： XU QING ,  RUSU CAMELIA ,  WINNICZEK JAROSLAW W ,  LIN FRANK Y ,  MILLER ALAN J

IPC: H01L21/3065

CPC classification number: H01L21/30655 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/76802 ,  H01L21/76898

Abstract: A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.

Abstract translation: 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 室。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。

公开(公告)号：WO0203763B1

公开(公告)日：2003-03-13

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO0203763A8

公开(公告)日：2002-04-04

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO02080234A2

公开(公告)日：2002-10-10

申请号：PCT/US0206650

申请日：2002-03-21

Applicant: LAM RES CORP ,  NI TUQIANG ,  JIANG WEINAN ,  CHIANG CONAN ,  LIN FRANK Y ,  LEE CHRIS ,  LEE DAI N

Inventor： NI TUQIANG ,  JIANG WEINAN ,  CHIANG CONAN ,  LIN FRANK Y ,  LEE CHRIS ,  LEE DAI N

IPC: H01L21/28 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: B81C1/00595 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76838

Abstract: A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

Abstract translation: 半导体制造方法，其中用无氧的含硫气体蚀刻有机抗反射涂层，其提供相对于下层的选择性和/或最小化上覆光致抗蚀剂的横向蚀刻速率以维持由光致抗蚀剂限定的临界尺寸。 蚀刻剂气体可以包括SO 2和诸如Ar或He的载气和任选的其它气体例如HBr的添加物。 该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

公开(公告)号：WO0175958A3

公开(公告)日：2002-01-03

申请号：PCT/US0108618

申请日：2001-03-16

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01L21/32137

Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine- containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

Abstract translation: 一种用于在用含氟气体清洁和/或等离子体蚀刻室的调节之后以最小等离子体蚀刻速率变化连续处理一系列半导体衬底的装置和方法。 该方法包括以下步骤：（a）将半导体衬底放置在等离子体蚀刻室中的衬底支撑件上，（b）在室中保持真空，（c）通过向腔室中提供蚀刻气体来蚀刻衬底的暴露表面 并激励蚀刻气体以在腔室中形成等离子体，（d）从腔室中移除基底; 并且（e）通过重复步骤（ad）连续地蚀刻腔室中的附加衬底，蚀刻步骤通过使围绕衬底的碳化硅边缘环上的H和Br的复合速率以足以抵消速率 其中Br在基底上被消耗。 该方法可以使用纯HBr或HBr与其他气体的组合进行。

公开(公告)号：JP2010219550A

公开(公告)日：2010-09-30

申请号：JP2010120922

申请日：2010-05-26

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： NI TUQIANG ,  JIANG WEINAN ,  CHIANG CONAN ,  LIN FRANK Y ,  LEE CHRIS ,  LEE DAI N

IPC: H01L21/28 ,  H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: B81C1/00595 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76838

Abstract: PROBLEM TO BE SOLVED: To provide the method of countermeasure for the change of critical dimension caused by etching of photoresist of an upper layer into lateral direction employing gas containing O
2 in the dry etching of an organic reflection preventing film.
SOLUTION: In a semiconductor manufacturing process, an organic reflection preventing film provides selectivity for a lower layer and/or minimizes the etching speed in the lateral direction of photoresist of an upper layer which maintains a critical dimension determined by a photo resist. Accordingly, SO
2 is employed as etchant gas and He, Ar or the like is employed as the carrier gas in the dry etching of the organic reflection preventing film. Another gas such as HBr or the like is added on optional target. This process is useful for the etching of contact opening or beer opening of not more than 0.25 μm upon forming a structure such as a damascene structure or the like.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供在使用含有O 2 的气体的干法蚀刻中提供由上层的光致抗蚀剂在横向上蚀刻引起的临界尺寸变化的对策 有机防反射膜。 解决方案：在半导体制造工艺中，有机反射防止膜提供对下层的选择性和/或最小化维持由光致抗蚀剂确定的临界尺寸的上层的光致抗蚀剂的横向蚀刻速度。 因此，在有机反射防止膜的干式蚀刻中，采用SO 2 作为蚀刻剂气体，使用He，Ar等作为载气。 另外的气体如HBr等被添加到可选目标上。 该方法在形成诸如大马士革结构等的结构时，对接触开口或啤酒开口的蚀刻是不大于0.25μm是有用的。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：DE60128229D1

公开(公告)日：2007-06-14

申请号：DE60128229

申请日：2001-06-26

Applicant: LAM RES CORP

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/00 ,  H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

公开(公告)号：AU2002248539A1

公开(公告)日：2002-10-15

申请号：AU2002248539

申请日：2002-03-21

Applicant: LAM RES CORP

Inventor： LEE CHRIS ,  CHIANG CONAN ,  NI TUQIANG ,  LIN FRANK Y ,  LEE DAI N ,  JIANG WEINAN

IPC: H01L21/28 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/027

Abstract: A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.